外延衬底

电路采用外延衬底材料，两次注入源/漏区，以提高击穿电压。

It employs epitaxial substrate material and adopts two implantations into source and drain region to improve breakdown voltage .

GaN外延衬底LiGaO2晶体的生长和缺陷

Growth and Defects of LiGaO 2 Crystal Used for GaN Epitaxy

提出基于SIMOX外延衬底ESOI（EpitaxialSIMOXSOI）的器件结构；

Proposal of devices based on epitaxial SIMOX SOI ( ESOI ) substrate ;

由于与GaN晶格失配小（约1.4%），γLiAlO2单晶有望成为一种很有希望的GaN外延衬底材料。

γ - LiAlO_2 single crystals were anticipated to act as a promising substrate material for the epitaxy of GaN because of the little lattice misfit ( about 1.4 % ) between each other .

氮化镓基薄膜材料由于外延衬底与氮化镓基薄膜材料之间存在较大的晶格失配，因此氮化镓基薄膜材料，特别是铝镓氮薄膜材料的质量还需要有很大的提高。

Due to large lattice mismatch between sapphire substrate and heterostructure epitaxial material , quality of GaN-based material , especially with a high Al mole fraction , need to be improved in a long period .

提出了一种基于二维器件模拟的深亚微米工艺外延型衬底的电阻宏模型。

A resistance macromodel for deep-submicron process epi-type substrate based on the 2D device simulation is presented .

文中分析了GaAs单晶衬底的质量对外延层表面形貌和外延层-衬底间界面状态的影响；

The influence of GaAs substrate quality on both the surface morphology of epilayers and the interfaces between epilayers and sub-states is analyzed .

另外，SiC衬底作为GaN外延生长的衬底有着很多独特的优势，逐渐成为半导体照明领域研究的热点。

In addition , GaN growth on the SiC substrates has many unique advantages and SiC substrates has gradually become a research focus in semiconductor materials .

重掺杂直拉硅单晶既可以消除CMOS器件的闩锁效应，也能够有效地降低器件的功耗，而广泛用作硅外延片的衬底材料。

The heavily doped Czochralski ( Cz ) silicon could not only eliminate the " latch-up " effect of small feature size CMOS devices , but also effectively reduces the energy loss , therefore is extensively applied as a substrate material of epitaxial silicon wafers .

一次液相外延的阶梯衬底内条形激光器

Terraced Substrate Inner Stripe Lasers by One-Step Liquid Phase Epitaxy

其目的是为了缓冲由GaN外延层和Si衬底的晶格失配造成的应力。

The lattice mismatch between substrates and epitaxy layer affects the films ' quality .

用分子束外延在多孔硅衬底上外延单晶硅来实现SOI结构

SOI Structure Formed by Molecular Beam Epitaxial Growth of Single Crystalline Si on Porous-Si Substrates

以分子束外延技术在SIMOX衬底上生长Si／Ge（0.5）Si（0.5）应变层超晶格。

Si / Ge_ ( 0.5 ) Si_ ( 0.5 ) Strained-layer superlattices are grown by molecular beam epitaxy on SIMOX substrates .

GaN外延用新晶体衬底LiGaO2的生长

Crystal Growth of LiGaO 2 as a New Substrate for GaN Epitaxy

结构材料由分子束外延制备，衬底片为（001）半绝缘InP单晶片，器件制作选用台面结构。

The material structure was grown on ( 001 ) semi-induction InP wafer by molecular beam epitaxy , and the device was fabricated with a mesa structure .

人们对ZnO的热衷还因为，它和GaN具有相同的纤维锌矿结构，在[0001]方向的晶格失配率小于1.8%，有望成为高质量GaN外延材料的理想衬底。

In addition , for having the same wurtzite structure as GaN with a lattice mismatch less than 1.8 % in [ 0001 ] direction , ZnO is a promising ideal substrate for high-quality GaN epitaxial material .

用AsCl3/Ga/H2气相外延系统在GaAs衬底上生长出GaAs外延层并制成Au-GaAs肖特基结构。

GaAs epitaxial layer was grown on GaAs substrate using AsCl_3 / Ga / H_2 vapour-phase epitaxial system and was made into Au-GaAs Schottky structure .

结果表明ZnO外延层具有高度C轴取向，表面光洁，平整，外延层与衬底之间有明显的过渡区。

The results indicated that ZnO epilayers were highly C-axis oriented and that the surface of the ZnO was very clean and smooth .