外延生长工艺
外延生长工艺-
外延生长工艺过程由计算机控制。
All the procedure for epitaxy growth was controlled by a computer .
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通过改变外延生长工艺来调节两层薄膜的折射率，可在一定波导的厚度范围内实现单模传输。
By adjusting the difference of refractive index of the double layer film , single mode operation can be realized with a certain waveguide thickness .
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熔体外延具有创新的生长工艺，不同于液相外延等常规的晶体生长方法。
Melt epitaxy have creative growth technology , which is distinct from the normal crystal growth method , such as liquid phase epitaxy etc.
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通过实验，分析了InP外延生长的影响因素，对所用的MOCVD生长工艺进行了优化，确立了合适的外延生长工艺流程。
Based on the experimental results , the growth condition used in this our work for InP growth by LP-MOCVD was optimized .