外延层

利用反向补偿原理控制硅CVD外延层中的金属杂质和微缺陷

Controlling metallic impurity and microdefect in silicon CVD epitaxy layer using contrary compensation

为了与低压电路在工艺上更好地兼容，设计具有薄外延层且能满足一定耐压的新型LDMOS是目前功率半导体技术的一个重要发展方向。

In order to compatible with low-voltage circuit , novel LDMOS with thin epitaxy layer is a developing trend .

p型硅外延层电阻率的控制

Controlling Resistivity of the Epitaxial Layer on p - Type Silicon

结果表明：（1）外延层呈P型；

The results show that : ( 1 ) the epilayers exhibit P-type carrier concentration ;

外延层中P＋层的厚度估计为1μm。

The depth of P + layer in the epitaxial GaP is estimated to be 1 μ m.

单晶外延层厚度的X射线双晶衍射测定

Thickness Determination of Single Crystal Epitaxial Layer by X-Ray Double-Crystal Diffraction

GaAlAs/GaAs外延层多层膜X射线干涉条纹的研究

Studies on X-Ray Interference Fringes in GaAlAs / GaAs Epitaxial Layers

X射线驻波方法研究半导体超薄异质外延层

Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

用双晶X射线衍射研究Si液相外延层

The study of Si liquid phase epilayers using double crystal X ray diffraction

V之间重复。高纯外延层还具有低补偿比的突出特点。

And the high pure materials have an outstanding characteristic of low compensative ratio .

硅中δ掺杂材料的表征C掺杂GaAs外延层光学特性分析

δ Doped Structures in Silicon and Their Characterization Carbon doped GaAs epitaxial layer grown by MOCVD

Raman谱分析结果表明外延层为完全应变的。

The Raman spectroscopy analyses manifest that the epitaxial layer is completely strained .

超高真空CVD生长锗硅外延层及其双晶X射线衍射研究

Growth of Ge-Si Strained layers and DC XRD Studies of the Epitaxial Films

透射式GaAs光电阴极AlGaAs/GaAs外延层X射线衍射摇摆曲线研究

The X-ray diffraction rocking curve of algaas / gaas epitaxial layer of transparent GaAs photocathode

其目的是为了缓冲由GaN外延层和Si衬底的晶格失配造成的应力。

The lattice mismatch between substrates and epitaxy layer affects the films ' quality .

湿法化学腐蚀法估算GaN外延层中位错密度

Evaluation of Dislocation Densities in GaN Epilayers by Wet Chemical Etching

MOCVD生长Ga（0.5）In（0.5）P外延层光学性质的研究

Optical properties of ga_ ( 0.5 ) in_ ( 0.5 ) p epilayers grown by MOCVD

GaN外延层中的缺陷对光学性质的影响

Influence of defects on the optical properties of Gan epilayers

GaAs三元异质外延层厚度测量的X射线衍射比强度法

X-Ray Diffraction Intensity Ratio Method for the Thickness Measurement of Ternary Heterogeneous Epitaxial Layers on GaAs Substrate

本论文主要讨论2°GaAs衬底如何生长高质量GaP外延层。

In this thesis the growth mechanism of high-quality GaP epitaxial layer on2 ° GaAs substrate is discussed .

利用这一外延层制作了MS结发光二极管，在反向偏压下获得黄色电致发光。

MS - junction luminescent diodes have been fabricated . Yellow electroluminescence has been obtained under reverse biased excitation .

硅上超高真空CVD生长硅锗外延层及其特性研究

Characterization and Growth of Germanium Silicon Epitaxial Layers by UHV / CVD

尝试了Si基上生长GaN外延层的一种新的缓冲层材料-阳极氧化铝。

A new anodic alumina buffer layer was used in the growth of GaN on Si .

双缓冲层对GaN外延层中缺陷的影响

Influence of double-buffer layer on defects in GaN epilayer

GaAs外延层蒸镀Cr和Au膜制作欧姆接触及分析

A Technique of Making Ohmic Contact with Cr and Au Plating Evaporated on the GaAs Epilayer

硅基GaN外延层的SIMS及XPS研究

SIMS and XPS Studies of GaN Epilayers Grown On Si Substrates

GaAs外延层掺杂分布的研究

Study on Doping Profile of GaAs Epilayer

GaAs衬底上生长的Ga（0.5）In（0.5）P外延层中的近红外光致发光对激发强度的依赖关系

Excitation Intensity Dependence of Near-Infrared Photoluminescence in Ga_ ( 0.5 ) In_ ( 0.5 ) P Grown on GaAs Substrate

GaP：N液相外延层中杂质对PL谱的影响

Influence of the impurity in LPE gap ∶ n on PL spectra

采用力平衡原理和重合位置点阵模型对SiC外延层中的应力释放现象进行了解释。

Strain relaxation in the SiC epilayer is explained by force balance approach and near coincidence lattice model .