微缺陷

利用反向补偿原理控制硅CVD外延层中的金属杂质和微缺陷

Controlling metallic impurity and microdefect in silicon CVD epitaxy layer using contrary compensation

微缺陷对薄膜滤光片环境稳定性的影响

Influence of the Microdefect on the Environment Stability of Thin Film Filters

无位错区熔Si单晶中的微缺陷对正电子寿命的影响

Effect of microdefects in dislocation-free float-zone single crystal Si on positron lifetimes

岩石在断裂破坏过程中微缺陷的定量描述始终是CT图像分析的关键。

The quantitative characterization of the microdefects of rock fracture process has always been the key of CT image analysis .

微缺陷对高体积分数SiCP/Al复合材料拉伸性能的影响

Effect of Microdefects on Tensile Properties of High Volume Fraction SiC_p / Al Composites

半绝缘砷化镓单晶中AB微缺陷的定量研究

Quantitative study of AB microscopic defects in semi-insulating GaAs single crystals

对HDL、LDL腔内壁面浓度与硅片中空洞型微缺陷的消除同时受到间隙氧浓度和点缺陷密度的影响。

The annihilation of voids was controlled by both concentration of interstitial oxygen and density of point defects .

本文研究了大直径直拉硅单晶中的原生微缺陷&流动图形缺陷（flowpatterndefects，FPDs）。

In this paper , the microstructure of flow pattern defects ( FPDs ), one kind of grown-in micro-defects , in large-diameter as-grown CZ-Si single crystals was investigated .

利用JEM2002透射电子显微镜（TEM）及其主要附件X射线能量散射谱仪（EDXA），对半绝缘砷化镓（SIGaAs）单晶中微缺陷进行了研究。

Microdefects in SI-GaAs single crystal were researched via transmission electron microscope ( TEM ) and energy dispersion X-ray analysis ( EDXA ) .

发现SIGaAs单晶中的微缺陷包含有富镓沉淀、富砷沉淀、砷沉淀、GaAs多晶颗粒和小位错回线等。

It is found that microdefects in SI-GaAs have various forms such as As-riched micro-precipitates , As microdefects , Ga-riched microdefects , polycrystal particles and little dislocation loop .

涂层中加入适量La2O3能脱氧、脱硫、去除杂质，减少表面微缺陷的产生，还可细化晶粒，提高耐磨性能。

Proper amount of La_2O_3 additive can gets rid of oxygen , sulfur and other impurity , remarkably fine TiC grain , which will improve the wear resistance of the coating .

外延用300mm重掺BSi衬底中热致微缺陷研究

Investigation of Thermally Induced Microdefects in 300 mm Heavily Boron Doped Si Substrates Used for Epitaxy

通过化学腐蚀、金相显微观察、透射电子显微镜、扫描电镜和X射线异常透射形貌等技术，研究了半绝缘砷化镓单晶中的位错和微缺陷。

Dislocations and micro-defects in semi-insulating gallium arsenide ( SI-GaAs ) are investigated by means of chemical etching , scanning electron microscopy ( SEM ), X-ray diffraction topography ( XRT ), transmission electron microscopy ( TEM ) and energy spectroscopy ( EDX ) .

文章用金相显微镜观察、统计了InSb晶片扩散前、后，经择优腐蚀后呈碟形坑的表面微缺陷。

Microdefects in the InSb wafer surface which appear as saucer pits by a preferential etching are observed and counted before or after diffusion by means of microscope .

通过不同温度高温退火后，测量氧沉淀的生成量和观察硅片体内微缺陷（BMD）密度与高温形核时间的变化关系，同时用透射电子显微镜（TEM）观察氧沉淀及相关缺陷的微观结构。

After annealing under different conditions , the variation of oxygen precipitation and the bulk microdefects ( BMDs ) density with annealing time at high temperatures was measured , and transmission electronic microscope was used to observe the microstructure of oxygen precipitates .

分析研究了一些缺陷对InP单晶衬底的影响，包括团状结构位错的产生及其对晶格完整性的影响，坑状微缺陷、晶片抛光损伤和残留杂质的清洗腐蚀等。

Defects and their influence on InP single crystal substrate arc investigated . Results on cluster dislocation and its deterioration on lattice perfection , pit-like micro-defects , residual damage , and impurities and their removal by cleaning are presented .

对充氚和未充氚的抗氢-2不锈钢（HR-2）样品进行退火处理，利用正电子湮没寿命谱技术以及金相检验技术探讨不锈钢中氦和微缺陷的相互作用行为。

After annealing treatment of stainless steel and stainless steel charged with tritium , the positron annihilation lifetime ( PAL ) spectrum is applied to investigate the interaction between helium and defects .

首先，本文系统地研究了高压（1GPa）对氧沉淀及其扩展缺陷形成的影响，探讨硅材料中微缺陷形成的微观机制。

Firstly , the influence of the high pressure pre-annealing on the formation mechanism of the oxygen precipitate and extended defects has been systematically investigated .

基于有效损伤体积的微缺陷损伤定义

The Micro Defect Damage Definition Based on the Effective Damaged Volume

压阻效应随微缺陷增多而降低。

The piezoresistive effect is degraded with increasing micro - defects .

掺锗直拉硅单晶中微缺陷的研究

Investigation on Micro-defects in Large Diameter Germanium Doped Czochralski Silicon

半绝缘砷化镓单晶中位错胞状结构和微缺陷的研究

Study on Si-GaAs Crystal Dislocation Cell Structure and Microdefects

光学元件微缺陷处电磁场分布特性的数值计算方法

Numerical computation method about distribution of electromagnetic field at micro-defect in optical element

扫描隧道显微镜重掺硅（111）表面微缺陷研究

Surface Microstructures of Si ( 111 ) Wafers ── Scanning Tunneling Microscope Observations

多区聚焦技术在粉末高温合金微缺陷检测中的应用

Application of Multizone Ultrasonic Inspection for Small Defects in P / M Superalloy

快速热退火硅中微缺陷分析

Defect Behavior in Ion-Implanted Silicon by Rapid Thermal Annealing

硅片表面热诱导微缺陷的行为及其主要来源

Behavior and Main Origin of Heat-Induced Microdefects at the Surface of Si Wafer

区熔硅近表面洁净区和体内微缺陷的形成

Formation of Denuded Zone and Bulk Micro - Defects in Floating Zone Silicon

离子束溅射法薄膜生长中结瘤微缺陷的生长机理

Mechanism of nodule growth in ion beam sputtering films

硅单晶微缺陷的激光荧光显示

Micro - defects in silicon crystal by laser-fluorescence