外延工艺

利用SIMOX技术和硅外延工艺制备了厚膜SOI材料。

The thick SOI films were prepared by SIMOX technology and Si epitaxy process .

Ga-In-As-Sb合金半导体MOCVD外延工艺设计的热力学分析

Thermodynamic Analysis of MOCVD Epitaxy Process Design for Ga In As Sb Alloy Semiconductor

激光分子束外延工艺用ZnO陶瓷靶材的研究

Study of ZnO ceramic targets used in laser molecular beam epitaxy Technology

以Si为衬底GaAs异质外延工艺及其在半导体激光器中应用的研究进展

Research and Development of Heteroepitaxial Technology of GaAs on Si Substrates and Its Applications in Semiconductor Lasers

采用一种新的液相外延工艺，研制出了具有大光胶结构的V型槽衬底内条形可见光发射半导体激光器。

Using a new kind of liquid-phase epitaxy technology , V-channeled substrate inner stripe visible GaAlAs semiconductor laser with a large optical cavity is fabricated .

针对目前LED外量子效率不高的现状，本论文提出从外延工艺和芯片制程两个方面采用新型GaN基LED结构，来改善这一缺陷，并得到较好的结果。

External quantum efficiency is low in the current situation , and this paper presents two aspects to improve this defect : the epitaxial process and chip process using the new GaN-based LED structure , and gets better results .

制备中先后尝试了普通硅片湿法腐蚀工艺、选择性外延工艺和利用SOI材料制作三种路线方案。

Three fabrication processes , including ( I ) wet etching ,( ii ) the selective epitaxial growth ( SEG ) on silicon wafers , and ( iii ) using silicon on insulator ( SOI ) wafers , were studied .

讨论了外延工艺和影响材料性质的因素。

Epitaxial process and factors affecting property of the material were discussed .

不过任何工艺都会有它自身的难点和缺点，外延工艺也不例外。

However , any technology has its own problems and shortcomings , Epitaxy process is no exception .

在一定程度上为分子束外延工艺的改进提供了依据。

To some extent the diagnosis can provide certain basic information for improving the molecular beam epitaxy technology .

在外延工艺中，会带来一些特有的无法避免的缺陷，而这些缺陷又会对半导体工艺中的其他制程产生影响。

The Epitaxy process will bring some of the inevitable defects , and these defects will influence other semiconductor process steps .

利用液相外延工艺并采用独特的掺杂技术生长出了用于近红外光电阴极的InP/InGaAsP异质结结构。

The InGaAsP / InP hetero-junction structure has been fabricated by using liquid phase epitaxy process with a specific doping technique .

利用硅/硅键合，可代替传统的深扩散和厚外延工艺，以实现高的击穿电压。

Traditional deep diffusion and thick epitaxy craft can be replaced by Si / Si bonding in order to realize the high breakdown voltage .

在特定温控下对掺杂气体分子的状态和活性进行控制，建立了一套具有自主知识产权的气源分子束外延工艺生长SiGe/Si材料的原位掺杂控制技术。

Controlling states and activities of the doping gases at a specified temperature , an in situ doping control technique of SiGe / Si materials by GSMBE with knowledge property right of our own is proposed .

而外延工艺可以提供近乎纯净的单晶硅层，可以极大的提升器件的性能，虽然在一定的程度上会提高成本，但是和优点比起来，这点成本还是可以被接受的。

And the Epitaxy process can provide almost pure silicon layer , can greatly enhance the performance of the device , although to a certain extent , will increase the cost , but considered the advantages , this cost is acceptable .

研究了外延工艺对膜的生长速率和磁光性能的影响，得到膜的磁光优值θF/α达2.9deg/dB，并观察了膜的磁畴结构和内部缺陷。

The influence of epitaxy on the growth rate and the magneto-optic properties of the films was studied . The high magneto-optic figure of merit , F / a , of 2.9 deg dB has been obtained . The magnetic domain structures and the defects of the films were observed .

超纯氢气（大于6N）是半导体硅外延等工艺必备的工艺气体。

Ultra pure hydrogen ( > 6N ) is a process gas necessary for silicon epitaxy in semiconductor industry .

外延生长工艺过程由计算机控制。

All the procedure for epitaxy growth was controlled by a computer .

通过改变外延生长工艺来调节两层薄膜的折射率，可在一定波导的厚度范围内实现单模传输。

By adjusting the difference of refractive index of the double layer film , single mode operation can be realized with a certain waveguide thickness .

7056玻璃与大面积GaAs外延片粘接工艺分析

Cementing Technologic Analysis for 7056-glass and Large Area GaAs Epitaxial Plate

利用同一外延层集成工艺方法制作了10Gb/s电吸收调制器/分布反馈（DFB）半导体激光器单片集成光发射模块。

A 10Gb / s transmitter module containing an electroabsorption modulator monolithically integrated with a distributed feedback ( DFB ) semiconductor laser is fabricated using the identical epitaxial layer scheme .

介绍了研制适用于大功率PIN二极管的硅外延材料的工艺过程，采用CVD化学气相外延生长技术，对硅源流量与掺杂剂浓度的精确控制，实现了快速外延生长和高浓度掺杂。

During CVD epitaxy technology by the accurate controlling of the silicon source flow and the concentration of dopant , the silicon epitaxy material suitable for high power PIN diode was got . The quick epitaxy growth and large concentration of dopant were resolved .

本文简述了制备（100）N/N~+硅外延片的工艺条件，给出了该材料性能数据。

Technology conditions of manufacturing ( 100 ) N / N ~ + epitaxial slice of silicon and data of material characteristics are provided in this paper .

绝缘体上外延硅薄膜MOS工艺的五管存储单元

Five-Transistor Memory Cells in ESFI MOS Technology

本文报道制备GaAs透射式光阴极过程中窗玻璃与大面积GaAs外延片热压粘结工艺的原理和过程，并重点分析抗反射膜的淀积、粘结温度控制和压力大小对粘结结果的影响。

In this paper we reported the process and principle of large-area GaAs epitaxial plate thermocompression bonded to K4 window-glass technology , and emphatically discussed the effects of the deposition of SiN film , the controlling of bonding temperature and the choice of pressure on bonding quality .

通过实验，分析了InP外延生长的影响因素，对所用的MOCVD生长工艺进行了优化，确立了合适的外延生长工艺流程。

Based on the experimental results , the growth condition used in this our work for InP growth by LP-MOCVD was optimized .

对于埋栅结构的SIT，我们寻找到了外延与染磷的最佳匹配条件，首次稳定了外延工艺，解决了长期以来外延反型这一工艺难点。

For the buried-gate SIT , the best matching condition of epitaxy and lightly phosphorus diffusion has been searched out . Furthermore the epitaxy process has been stabilized and the problem of the inversion epitaxial-layer forming has been solved .

报导了3mm波段硅双漂移崩越二极管所需PN/N~+多层、亚微米外延材料的常规CVD生长技术，研究了实现这些高要求的多层结构的方法，得到了最佳的外延工艺条件。

In this paper , a vapor phase growth technique of PN / N + multilayer submicron epitaxial material for 3 mm waveband Si DDR IMPATT diodes is pre-sented . The approaches to obtain these high quality multilayer structures are studied . The optimum epitaxial process conditions have been established .