气相外延

n型气相外延GaAs层中中子辐照感生缺陷的研究

Study of neutron irradiation-induced defects in n-type vapor phase epitaxy GaAs layers

氢化物气相外延生长GaN材料及其物性分析

Growth and Characterization of GaN by Hydride Vapor Phase Epitaxy

气相外延GaN的拉曼散射

Raman scattering in Gan grown by VPE

加氨砷压法气相外延生长GaAs（1-x）Px：N/GaP

Vapor phase epitaxy growth of gaas_ ( 1-x ) p_x : n / gap by the ammonia doping arsenic vapor pressure method

单晶AlN薄膜的金属有机气相外延生长研究。

The growth of single crystal AlN films by metal organic vapor phase epitaxy .

SiHCl3-H2气相外延生长Si单晶反应机理的理论研究

Theoretical Study of Reaction Mechanism of Silicon Single Crystal Epitaxial Growth in SiHCl_3-H_2 Gas Phase

GexSi（1－x）减压化学气相外延过程的流体力学和表面反应动力学分析

A Kinetics and fluid-Dynamics Analysis of Ge_xSi_ ( 1-x ) Low Pressure Chemical Vapor Epitaxy

研究了衬底氮化过程对于氢化物气相外延（HVPE）方法生长的GaN膜性质的影响。

Effect of nitridation on the properties of hydride vapor phase epitaxy ( HVPE ) grown GaN films was studied .

利用喇曼光谱和光致发光谱，对采用氢化气相外延淀积方法在MOCVDGaN衬底上生长的掺碳GaN样品的光学性质进行了研究。

Raman spectra and Photoluminescence spectra are used to investigate the influence of carbon doping on the structural and optical properties of GaN films grown by the hydride vapor phase epitaxy ( HVPE ) .

用AsCl3/Ga/H2气相外延系统在GaAs衬底上生长出GaAs外延层并制成Au-GaAs肖特基结构。

GaAs epitaxial layer was grown on GaAs substrate using AsCl_3 / Ga / H_2 vapour-phase epitaxial system and was made into Au-GaAs Schottky structure .

氢化物气相外延（HVPE）方法因其超高的生长速率成为目前工业化生产优先选择的生长方法。

Hydride Vapor Phase Epitaxy ( HVPE ) method has been widely used for its industrial production because of the high growth rate .

本文研究了1MeV中子辐照在气相外延n-GaAs有源层中深能级缺陷的特性和热退火性能。

The characterization and thermal annealing behavior of deep-level defects in 1 MeV neutron irradiated VPE n-GaAs layers have been studied .

采用SiNx和Si为扩散源，对低压金属有机气相外延生长的AlN薄膜进行了Si热扩散掺杂，研究了Si掺杂对AlN薄膜电学性质的影响。

The AlN films grown by low pressure metal organic vapor phase epitaxy are doped by Si thermal diffusion using Si and SiNx films as diffusion source , and the roles of Si doping on the electrical properties of AlN films .

研究了利用水平氢化物气相外延（HVPE）系统在蓝宝石衬底上外延氮化镓（GaN）的生长规律，重点研究了作为载气的氮气流量对GaN膜的结构及光学性质的影响。

The influence of carrier gas ( i.e. N 2 ) flow rate on the optical properties of GaN epilayers on sapphire substrates grown by horizontal halide vapor phase epitaxy ( HVPE ) system was studied .

介绍了研制适用于大功率PIN二极管的硅外延材料的工艺过程，采用CVD化学气相外延生长技术，对硅源流量与掺杂剂浓度的精确控制，实现了快速外延生长和高浓度掺杂。

During CVD epitaxy technology by the accurate controlling of the silicon source flow and the concentration of dopant , the silicon epitaxy material suitable for high power PIN diode was got . The quick epitaxy growth and large concentration of dopant were resolved .

氢化物气相外延（HVPE）是制备氮化镓（GaN）衬底最有希望的方法。

Hydride Vapor Phase Epitaxy ( HVPE ) is a promising growth method for obtaining a GaN substrate . In this paper we have introduced the electrical , optical properties of GaN material and its important use .

从I-V特性曲线计算出二极管的理想因子n值为1.4，势垒高空>0.75eV.用汞探针和阳极氧化逐层剥离的方法测得了N型InP气相外延载流子浓度的纵向分布。

From the I-V characteristic curve the ideal factor ( n ) of 1.4 and the barrier height of more than 0.75 eV are obtained . The carrier concentration profiles of N-type Inp VPE layers were measured by using the mercury probe C-V method combined with the anodic oxidation etching .

气相外延氮化镓掺杂生长的研究

The investigation on the gas phase doping epitaxial growth of GaN

金刚石表面气相外延单晶金刚石薄膜新技术

New technique for vapour epitaxial grown single-crystal diamond film on diamond surface

高真空化学气相外延炉的研制

Development on High Vacuum Chemical Vapour Deposition Furnace

金属有机化学气相沉积外延技术生长GaN基半导体发光二极管和激光二极管（Ⅰ）

MOCVD Growth of GaN-based light emitting diodes and laser diodes (ⅰ)

采用金属有机化学气相淀积外延技术生长外延材料，并在GaAs集成电路工艺线上完成工艺制作。

The device is achieved by metal organic chemical vapor deposition and GaAs integrated circuit processing technology .

GaAs气相双层外延层中有源层与缓冲层过渡区宽度的研究

Study of the Width of the Transition Region between GaAs Active and Buffer Layers Grown by VPE

这个高的数值可以和从化学气相淀积外延得到的数值相比拟。

The higher value is comparable to those obtained in CVD epitaxy .

分析了气相同质外延单晶金刚石膜中晶面指数与薄膜品质的关系，指出了控制实验条件是确保各晶面薄膜品质的关键。

In this paper , the relationship between the crystal face index and the film quality in the vapor epitaxial growth of single crystal diamond film is analyzed , and it points out that the key factor which insures the film quality is to control the experimental conditions .

报道了一种新型半绝缘键合SOI结构，采用化学气相淀积加外延生长键合过渡多晶硅层的方法实现了该结构。

A novel semi-insulation bonding SOI structure that is realized by LPCVD and introducing an epitaxial interim polysilicon layer is reported .

气相法同质外延金刚石单晶薄膜的研究

An Investigation of the Homoepitaxial Diamond Thin Film Growth by CVD Method

目前，石墨烯的制备方法主要包括：微机械剥离法、化学气相沉积法、外延生长法、氧化石墨烯溶液（grapheneoxide，GO）还原法和有机合成法等等。

So far , several fabrication routes for the production of graphene have been established , such as micromechanical exfoliation , chemical vapour deposition , epitaxial growth , the reduction of graphene oxide ( GO ) solution , and organic synthesis .

评论了国内外化学气相沉积的异质外延金刚石膜制备技术、性质表征以及应用和展望。

The major aspects of the recent development in the growth , characterization and applications of the hetero epitaxial diamond films by chemical vapor deposition were reviewed .

物理方法包括各种蒸发和溅射：化学方法主要包括分子束外延（MBE）、金属有机物化学气相沉积（MOCVD）、氢化物气相外延（HVPE）等。

Physical methods include evaporation and sputtering ; Chemical methods mainly include molecule beam epitaxy ( MBE ), metal organic chemical vapor deposition ( MOCVD ), hydride vapor phase epitaxy ( HVPE ) and so on .