同质外延

SrTiO3同质外延过程中的反射高能电子衍射图案分析

Analysis of reflection high-energy electron diffraction pattern during SrTiO_3 homoepitaxy

4H-SiC同质外延中的缺陷

Defects in 4H-SiC Homoepitaxy CVD Growth

GaAs（100）同质外延表面相变的动态过程研究

Study of Transient Surface Phase Transition on GaAs ( 100 ) During MBE Growing

对于GaN基LED来说，同质外延十分困难，所以通常采用异质外延生长GaN薄膜。

For GaN-based LED , the homoepitaxial very difficult , so usually hetero-epitaxial growth of GaN films .

最近报道显示，硼掺杂同质外延金刚石层暴露在氘离子束中能形成浅施主态的n型电导。

Recent report showed that exposure of p-type ( B doped ) homoepitaxial diamond layers to deuterium plasma can form n-type diamond with a shallow donor state .

Al掺杂4H-SiC同质外延的缓冲层

The Buffer Layer of Al-doped 4H-SiC

我们基于高阻的低缺陷密度同质外延GaN材料首次制作了具有双工作模式的肖特基势垒型紫外探测器。

We demonstrate a dual-operation-mode UV Schottky-barrier PD fabricated on high-resistivity GaN homoepitaxial layer with low defect density .

4H-SiCPiN二极管抗辐照特性研究4H-SiC同质外延层的质量表征

Study on Radiation Hardness of 4H-SiC PiN Diodes Characterization of 4H-SiC Homoepitaxial layers

金刚石的同质外延掺硼和Schottky特性

Boron doped diamond homoepitaxial growth and Schottky characterization

本论文围绕这一话题，研究了大尺寸单晶石墨烯的CVD制备、氢气刻蚀行为以及石墨烯沿侧向的同质外延。

This dissertation is about CVD synthesis and hydrogen etching of large-size single-crystal graphene grains , and lateral homoepitaxial growth of graphene .

用HVPE方法同质外延生长GaN

HVPE Growth of GaN for Homoepitaxial Growth

4H-SiC同质外延的表征及深能级分析研究

The Study on the Characterization and Deep Level Energy of 4H-SiC Homoepitaxial Layers

基于分子源SrTiO3薄膜同质外延生长的MonteCarlo模拟Ⅱ：模拟结果与讨论

Simulation of the Homoepitaxial Growth of SrTiO_3 Thin Film with Molecular Source by Monte Carlo Method II : Results and Discussion

4H-SiC同质外延层的质量表征

Characterization of 4H-SiC Homoepitaxial layers

因为阳极采用悬臂式设计，研制的电子束蒸发器完全避免了高压放电和缓慢短路的问题，并具有结构简单，价格低廉，装配方便等优点。它已经成功应用于Si单晶薄膜的同质外延生长。

Because of the special cantilever design , the Si EBE has avoided the high-voltage discharge and electrode short completely , and it has many advantages , such as simple structure , low price , easy maintenance , etc.

从实验出发，用LPCVD外延系统在偏向<11-20>方向8°的4H-SiC（0001）Si面衬底上，利用CVD技术进行了4H-SiC同质外延生长。

In this paper , we study the 4H-SiC homoepitaxy growth on 8 ° off SiC ( 0 001 ) substrates using low pressure chemical vapor deposition ( LPCVD ) method . The epilayers are etched in molten KOH solution .

气相法同质外延金刚石单晶薄膜的研究

An Investigation of the Homoepitaxial Diamond Thin Film Growth by CVD Method

同质外延钛酸锶薄膜的生长模式图谱

Growth mode map of strontium titanate Homoepitaxy

第四章：本章中我们重点证实了石墨烯侧向同质外延生长机制的存在。

In chapter four , we focused on demonstration of lateral homoepitaxial growth mechanism of graphene .

因此抑制异常粒子的形成对提高同质外延金刚石膜的质量非常重要。

Suppressing the formation of abnormal particles is very important to improve the quality of homoepitaxial diamond .

并通过拉曼散射，扫描电镜、反射高能电子衍射对实验结果进行了检测分析，在（100）面同质外延的金刚石单晶膜上观察到了螺旋生长的现象。

Spiral growth was observed on the ( 100 ) face of the above obtained homogeneous epitaxial diamond film .

目前人们已在实验上用同质外延、异质外延的方法制备了金刚石紫外发光二极管，观察到了较强的紫外光发射。

Diamond ultraviolet light emitting diodes ( LEDs ) producing strong ultraviolet emission have been made by homoepitaxial and heteroepitaxial film growth in the laboratory .

分析了气相同质外延单晶金刚石膜中晶面指数与薄膜品质的关系，指出了控制实验条件是确保各晶面薄膜品质的关键。

In this paper , the relationship between the crystal face index and the film quality in the vapor epitaxial growth of single crystal diamond film is analyzed , and it points out that the key factor which insures the film quality is to control the experimental conditions .

Si（100）和Si（111）衬底上的同质分子束外延

Molecular Beam Homoepitaxy on Si ( 100 ) and Si ( 111 ) Substrates

高氧压下氧化物薄膜同质和异质外延的RHEED实时监测

In situ monitoring of the growth of complex oxide thin films at high oxygen pressures using a three-stage pumping RHEED system

论文首先介绍了一些研究背景，基于实验研究得到的STM图象，介绍了岛形貌的分类，同质、异质外延生长。

At first , some study background is introduced in the thesis . The kinds of island morphologies and the differences between homoepitaxial and heteroepitaxial are introduced according to the STM morphologies obtained from experiments .

本文主要研究内容是GaSb的同质/异质外延生长和材料的表征和物性分析，利用同质外延指导异质外延的生长。

The main contents of this article are homogeneous GaSb / hetero-epitaxial growth and characterization and analysis of physical properties of materials , the use of homoepitaxial guidance heteroepitaxial growth .