场氧化层
- 网络Field oxide;field oxide layer;FOX
场氧化层-
通过对传统RFLDMOS器件的工艺流程进行修改，并在漂移区上方引入场氧化层结构，改善了器件的准饱和现象。
By modifying process for conventional RF LDMOS and introducing field oxide on the drift region , quasi-saturation effect of the device is reduced and performance of the device is greatly improved .
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在沟道热阻模型的基础上，考虑器件间场氧化层和金属互联线的影响，建立了非晶硅薄膜晶体管的二维热阻模型；
Then , by considering of the effects of field oxide and interconnects between devices , a two dimensional thermal model is developed .
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沟道大电流感应n沟金属-氧化物-半导体场效应晶体管栅氧化层的加速击穿
Channel-Current-Induced Gate-Oxide Breakdown Acceleration in N-Channel MOSFET 's