有源区

本文研究的白光LED不仅突破性地实现了有源区同一有源层直接发出白光，而且其开启电压比一般LED开启电压明显降低。

The white LED researched in this paper not only can directly emit white light from the same layer in active area , but also has much lower threshold voltage value compared with the traditional LEDs .

该方案通过采用恒流源、有源区温度控制以及波长锁定等技术方法来实现DFBLD的稳频驱动及控制。

The frequency of DFB LD was driven and controlled through such technology as constant current , temperature control in active area , wavelength lock and etc.

计算了有源区在连续工作条件下的最大温升，分析了激光器工作时的功率密度和p电极比接触电阻率等参数对温度特性的影响。

The maximum temperature of active region under continuous operation conditions is also calculated .

3对LED器件多量子阱有源区载流子输运与复合跃迁的分析。

The carrier transportation and transition in LED active layer had been analyzed .

激光器有源区材料的禁带宽度Eg。

The forbidden band width Eg of QW LD active layer materials .

量子阱LD有源区量子阱数目的优化设计

Optimization Design of Quantum Wells Number in Active Cavity of Quantum Well LD

而采用耦合缺陷腔的结构和H2腔都增加了腔内有源区的体积。

Coupled defect cavity and H_2 cavity can increase the volume of active material included in the cavity .

同样，以PIN光探测器有源区速率方程为基础，建立了半导体光探测器的等效电路模型。

Similarly , the equivalent circuit model of semiconductor optical detector has been established , based on the rate equations of PIN photodiode active region .

研制了有源区为InGaAs张应变体材料的1.55μm偏振不灵敏半导体光放大器（SOA）。

A 1.55 μ m polarization-insensitive semiconductor optical amplifier ( SOA ) was fabricated with the active region of InGaAs tensile-strained bulk material .

光纤PCVD工艺等离子体有源区场的分析

The Analysis of Electric Field in Plasma Active Zone in Optical Fiber PCVD Process

Ti和Ni依次淀积在有源区的表面，金属化退火后的XRD分析结果表明Ni2Si是主要的合金相。

Ti and Ni are deposited in sequence on the surface of the active regions . Ni_2Si is identified as the dominant phase by X-ray diffraction ( XRD ) analysis after metallization annealing .

SOA中的各种特性本质上与有源区中载流子的带内和带间特性有关，而载流子的特性最终归结于有源区的能带结构。

The characteristics of SOA is in nature controlled in its active region by the intra - or interband carrier dynamics , which is eventually determined by the energy band structure of the active area .

指出IECLD的噪声特性主要取决于有源区和外腔的长度及折射率的变化。

The noise characteristics of an IEC LD depend mainly on the lengths of the active region and the external cavity and on the changes in the refractive index .

文章对隧道再生两个有源区内腔接触式垂直腔面发射激光器（VCSEL）光学特进行了研究。

The optical characteristics of tunnel-junction-regenerated multiple active regions intracavity-contacted Vertical Cavity Surface Emitting Laser ( VCSEL ) have been investigated .

通过利用突变结PIN理想结构电场分布模型，分析了该结构发光二极管（LED）反向击穿电压与非故意掺杂有源区厚度的线性相关性。

The linear relation between the reverse breakdown voltage and un-doping active region ′ s thickness of PIN light emitting diode ( LED ) was analyzed by using the ideal PIN structure ′ s electric field distribution model .

在制作平面型双栅MOS器件中，采用自对准假栅结构，利用UHV外延得到有源区（S、D、G），是一种制作自对准双栅MOSFET的有效手段。

An effective way to fabricate self-aligned double-gate MOSFET 's is to prepare a replaced gate structure and make the active area ( S , D , G ) using UHV epitaxy .

采用先进的LPE及反应离子刻蚀等微细加工技术制作了盘型－图钉式微腔结构，测得其有源区的光荧光谱的半宽度为0.032eV，波长为815.33nm。

The measured half width of photoluminescence spectrum in the active area is 0.032 eV with the wavelength of 815.33 nm .

光纤激光器为短腔结构，其有源区采用Er-Yb共掺单模光纤，有源光纤长度为6cm。

The fiber laser is short cavity with 6 cm Er-Yb co-doped fiber .

分析有源区内载流子和VCL光子密度的变化，揭示了增益钳制的物理机理。

Analyzing the carrier density and photon density of VCL in active region , the physical mechanism of gain clamping was revealed .

Gth是为了补偿在有源区以外的区域中的损失所要求的有源区增益。

Gth is the active region gain required to offset losses in the regions exterior to the active region .

但是由于大功率LDA特殊的有源区波导结构，使得输出的光束在快慢轴上发散角比较大，光束质量也相差很大。

However , because of special wave-guide structure , angles and quality of the beam in the fast axis is greatly different from those in the slow axis .

用该方法模拟分析了有源区两侧GaAs垒层的厚度及spacer层中的Al组份对阈值增益、光限制因子和共振波长的影响。

Meanwhile , the effects of the GaAs barrier thickness and the Al composition in the spacer layer on the threshold gain , the optical confined factor and the resonant wavelength are analyzed by the method .

通过剖析该结构中有源区各部分的作用，得出大的张应变的引入主要是用于提高TM模的材料增益，获得偏振不灵敏和大的TE模带宽，减小制备难度。

Graded tensile strain induced in the active structure is to enhance the TM mode material gain , obtain polarization insensitivity , expand the bandwidth for TE mode gain , and relax the limitation for the stripe width .

线性光放大器（LOA）通过在有源区内引入垂直光场（VCL），对增益形成了钳制、减小了信道间的串扰。

Through the build of vertical microcavity laser ( VCL ) in active medium , linear optical amplifier ( LOA ) clamps gain and suppresses crosstalk .

LP-MOVPE生长宽波导有源区无铝单量子阱激光器

LP-MOVPE Grown Broad-Waveguide Al-Free Active-Region SQW Lasers

850nm有源区无铝高功率SCH-SQW激光器

850 nm Al-free Active-region High Power SCH-SQW Laser

为了提高脊波导结构的超辐射二极管（SLD）与单模光纤的耦合功率，研究了有源区与脊之间的残留层和上光限制层的厚度对SLD输出功率和近场光斑的影响。

With the aim of achieving high coupling power of RWG SLDs into SMFs , the structure dependences of the output power and the near field pattern are investigated .

电压调制发光（VMEL）实验确认，在发光有源区中注入载流子引起的强发光复合是产生NC现象的基本原因。

The voltage modulated electroluminescence ( VMEL ) experiment confirms that the reason of negative capacitance could be the strong recombination of the injected carries in the active region of luminescence .

为解释发光二极管（LEDs）中的负电容（NC）现象，提出了在有源区与局部强复合效应有关的新模型，首次通过对载流子连续性方程的求解导出了NC的解析表达式。

In order to explain the phenomena of negative capacitance ( NC ) in light-emitting diodes ( LEDs ), we presented a new model based upon the local strong recombination in active region . And we deduced the analytic expression of NC from continuity equation .

在二次外延中，我们仅装一槽GaAlAs源液，在晶片上仅停留一次便生长出两个掩埋层，且层间界面与有源区自对准。

In the second - step growth , two burying layers were grown by a undoped GaAlAs growth solution contacting with the surface of wafer only once . There are one middle layers .