区熔

利用区熔法、机械合金化、放电等离子烧结（SPS）技术、热压法等多种工艺制备了p型碲化铋基热电材料。

P-type Bi_2Te_3-based thermoelectric materials were fabricated by various methods , such as zone-melting , mechanical alloying , spark plasma sintering ( SPS ) and hot-pressing .

两种行之有效的晶粒间界限制技术：热沉结构和硅槽结构使区熔再结晶SOI实现定域无缺陷，这是采用区熔技术制备SOI的技术关键和难点所在。

In this paper , such effective techniques as Heat Sink structure and Grooved structure have been proposed to localize grain-boundaries during Zone-Melting - Recrystallization ( ZMR ) . These techniques are the key points of ZMR-SOI technology .

无位错区熔Si单晶中的微缺陷对正电子寿命的影响

Effect of microdefects in dislocation-free float-zone single crystal Si on positron lifetimes

激光区熔Bi系超导复合带组织特征

Microstructure characteristics of laser zone remelting BI system superconducting composite tape

激光区熔定向凝固Al2O3/YAG/ZrO2亚共晶陶瓷的微观组织

Microstructure of Al_2O_3 / YAG / ZrO_2 Hypoeutectic Ceramics Directionally Solidified with Laser Zone Melting

激光区熔法生长Bi系超导复合带（线）材

Direct Crystallization of Bi-Based Superconducting Tapes ( Wires ) by Laser Zone-Melting Method

激光区熔定向凝固Al2O3/YAG/ZrO2共晶自生复合陶瓷的显微组织与断裂韧性

Microstructure and fracture toughness of directionally solidified Al_2O_3 / YAG / ZrO_2 eutectic ceramics by laser zone remelting

定域SOI区熔再结晶研究电子束区熔高温合金单晶的制备工艺

Preparing Method of Super-alloy Single Crystal with Electron Beam Zone Melting Furnace

红外区熔再结晶SOI中形貌缺陷的产生与抑制

Formation and Inhibition of Morphological Imperfections in Infrared ZMR-SOI

本文应用X射线透射截面形貌技术研究了氢气区熔硅单晶中氢致缺陷与热处理温度的关系。

The relationship between the annealing temperatures and the hydrogen-induced defects in floating zone silicon grown in hydrogen atmosphere has been investigated by X-ray section topography .

利用深能级瞬态谱（DLTS）对电子辐照区熔硅中多稳态缺陷进行研究的结果表明。

The multistable defect in electron-irradiated Fz silicon has been studied by usingDLTS .

当区熔速率为2.0mm／min时，单晶质量最好。

When the rate is 20 . mm / min , the best quality single crystal was got .

真空FZ硅掺镓试验表明，镓在区熔过程中一边发生分凝，一边向外蒸发。

Experiments on Ga-doped FZ-Si grown in vacuum demonstrated that Ga would segregate and evaporate during the Floating-zone process .

在氢气区熔硅单晶中观测到一个2688cm~（-1）的新Si-H红外吸收峰。

A 2688 cm ~ ( - 1 ) infrared absorption band is observed in FZ silicon grown in hydrogen .

研究了区熔再结晶（ZMR）设备及其工艺特点。

ZMR ( zone melting recrystallization ) apparatus is introduced , and the processing characteristic of ZMR is studied .

采用区熔定向凝固的方法，制备〈110〉取向Tb-Dy-Fe超磁致伸缩合金晶体。

< 110 > oriented rods of a Tb-Dy-Fe magnetostrictive alloy have been successfully prepared by zone melting unidirectional solidification .

区熔（FZ）硅单晶是制作电力电子器件的主要原材料，产量大约占整个硅片市场6%～8%。

FZ Si single crystal is the major raw material for Power Electronics device manufacturing , which output is around 6 % ~ 8 % of total Si wafer market .

其定向凝固或者是在水冷铜坩埚内采用Czochralski技术进行，或者是采用不需要坩埚的悬浮区熔法实现，但这两种方法都不能得到较高的温度梯度。

Their directional solidification is carried out by either Czochralski technology in the water-cooled copper crucibles or floating zone method without crucible , but the temperature gradient is not high with these two methods .

本文采用切克拉斯基法（CZ法）和电子束区熔法（EBFZM）两种定向凝固方法制备该共晶自生复合材料；

Therefore , in this paper , two directional solidification methods , Czochralski method and electron-beam floating zone melting method , were used to obtain such material .

为了消除辐照损伤，获得准确的目标电阻率，中子嬗变掺杂区熔硅（NTDFZSi）通常采用750～850℃－2h的退火工艺。

In order to remove irradiation damage and achieve the exact target resistivity , the annealing technology is usually used for NTDFZSi at 750 ~ 850 ℃ - 2h .

对NTD氢区熔单晶硅进行了不同温度下等时退火，采用Hall电学方法测量了电阻率、迁移率随退火温度的变化规律。

Isochronal thermal annealing behavior of NTD floating zone silicon grown in the hydrogen ambient ( called NTD FZ ( H ) Si ) is reported . The dependencies of resistivity and carrier mobility on the annealing temperature are determined by room temperature Hall electrical measurements .

研究结果表明：（1）激光区熔定向凝固Al2O3/YAG/ZrO2共晶由α-Al2O3、YAG以及ZrO2三相组成，不存在其他相以及相间晶团。

The results show the following . ( 1 ) The directionally solidified Al_2O_3 / YAG / ZrO_2 eutectic ceramic shows a ' Chinese script ' microstructure consisting of only three phases of Al_2O_3 , YAG and ZrO_2 , and no other phases and colonies .

区熔法适合于生产大尺寸的CaB6单晶，而铝熔剂法制备的CaB6单晶尺寸最大为5mm，对测定其某些物理性能有一定的局限。

Floating zone method is suitable for the production of single crystal in larger size . The longest dimension of CaB 6 single crystal prepared by Al-flux method is 5 mm only , which limits the testing of some physical properties .

通过本文的实验及分析可以看出，由于电子束区熔设备的能量密度大，可以获得很大的温度梯度，因此利用该设备制取ЖC36高温合金单晶是可行的。

For single crystals with various solidified morphologies . It can be concluded that the Ж C36 single crystal superalloy can be gotten with the EB apparatus with high temperature gradient .

采用区熔定向凝固方法，在30-720mm/h生长速度范围内，均能获得（110）轴向择优取向生长的Tb-Dy-Fe合金；凝固形态随生长速度提高出现从平面晶到胞状晶、树枝晶转变；

The directionally solidified Tb-Dy-Fe magnetostrictive alloys with < 110 > orientation were prepared in a velocity range from 30 to 720 mm / h , and the solidified morphologies change from planar , cellular to dendritic with increasing growth velocity .

在重掺杂非活性单晶硅片上生长一定厚度的SiO2，开窗口后作为衬底，利用快速热化学气相沉积（RTCVD）及区熔再结晶（ZMR）方法制备多晶硅薄膜太阳电池。

After growing SiO 2 layer with a certain thickness on heavy diffusion inactive C Si wafer , opening windows , then fabricating polycrystalline silicon thin film solar cells on it with Rapid Thermal Chemical Vapor Deposition ( RTCVD ) and Zone Melt Recrystallization ( ZMR ) method .

由于采用了区熔再结晶（ZMR）的方法，获得了取向一致的多晶硅薄膜，为薄膜电池的制备打下了良好的基础，转换效率达到1021%。

Due to using ZMR method , consistent tropism silicon thin film was obtained , it provides a fine base for fabrication of thin film solar cells . The best efficiency of polycrystalline silicon thin film solar cells reached up to 10 21 % .

由以上实验结果及分析可以看出，采用高温度梯度的电子束区熔定向凝固技术能够制备出组织细化、定向效果良好的铌&硅基RMICs试样，并可提高材料的力学性能。

It can be concluded from above results that niobium-niobium silicide based in-situ composites ( RMICs ) with a uniformly orientated microstructure can be produced by the EBFZM with high temperature gradient , and their mechanical properties can be increased .

铌基共晶自生复合材料（NBISC）经真空自耗电弧熔炼成母合金锭，采用高温度梯度的电子束区熔装置制备定向凝固的试样，分析其组织特征。

An ingot of Nb based in-situ composites ( NBISC ) was produced by a vacuum self-consuming arc melting furnace . The directionally solidified samples were prepared by an electron beam floating zone melting ( EBFZM ) furnace with a high temperature gradient , and their microstructural characteristics were analyzed .

金属片加热区熔法单晶生长及应用

Crystal growth by metal strip heated zone melting and Its Applications