电子抗蚀剂

使用PMMA电子束抗蚀剂，在该系统上获得0.1微米的线分辨率。

Using PMMA e-beam resist , a line resolution down to 0.1 μ m has been achieved with this system .

干法显影的电子束抗蚀剂&聚环己烯砜叠氮系

Dry developing electron beam resist & polycyclohexene-sulfone azides

电子束抗蚀剂反差的计算

The calculation of contrast in electron beam resist

邻近效应的定量描述需要获得电子在抗蚀剂中的沉积能分布，它决定着电子束曝光的邻近效应和分辨率。

The quantitative description for the proximity effect requires knowledge of the distributions of energy dissipations in resist , which determines the proximity effect and exposure resolution in EBL .

作为电子束抗蚀剂，其灵敏度为1.5×10~（-6）C/cm~2，分辨率为0.75μm，反差为2，曝光之后在真空中几乎没有后交联现象。

The sensitivity of IPS to electron beam is 1.5 × 10-6 C / cm-2 and the resolution is 0.75 μ m. The contrast is 2 . It is found that the crosslinking does not proceed in vacuum after electron beam exposure .

电子工业光致抗蚀剂乳化废水预处理试验研究

Experimental pretreatment of photoresist emulsified wastewater in the electronic industry

对不同入射电子束能量、抗蚀剂厚度的反差的计算显示：随着入射电子束能量的增加，反差不断减小；随着抗蚀剂厚度的增加，反差不断增大。

The contrast calculations for different incident energy and resist thickness show : the contrast continuously reduces with the increasing of incident energy ; and it increases with the reducing of resist thickness . 4 .

给定电子剂量，确定抗蚀剂吸收能量密度，选用抗蚀剂的能量阈值模型确定抗蚀剂受到电子辐照后能否被显影。

For a given dose of electrons , the energy density absorbed by the resist is determined , and a resist critical energy density model is adopted to determine whether the resist the resist can be developed after electrons irradiation .

电子束曝光中由于电子在抗蚀剂中的散射引起的邻近效应是决定曝光分辨率的关键因素。

In EBL , a key factor to dominate the exposure resolution is the proximity effect produced by the scattering of energetic electrons in resist .

飞机自卫电子对抗设备GB/T16527-1996硬面感光板中光致抗蚀剂和电子束抗蚀剂规范

Specification for photoresist / E-beam resist for hard surface photoplates