自掺杂

SOS膜的铝自掺杂剖面

Aluminium Autodoping Profile of SOS Films

为了保证p型硅外延片的电阻率具有良好的可控性和重现性，除了充分抑制重掺硼衬底的自掺杂作用外，还需十分严格地控制硅外延片的生长温度和速度。

To achieve good controllability and reproducibility of the resistivity of epi-layers on p-type Si , strict control is required over the growth temperature and rate , as well as a fully suppression of the auto-doping in heavily boron doped substrate .

自掺杂导电高分子中取代基对主链电荷分布的影响导电高分子膜包覆YBa2Cu3O7超导体抗环境作用的研究

Influence of Substituent of Self-doping Conductive Polymer on Charge Distribution in Polymer Chain Conductive Polymer Encapsulation of YBa_2Cu_3O7 for Protection Against Reactive Environments

多层硅外延中自掺杂现象研究

A Study on the Auto-doping Phenomenon in Multi-layer Epitaxial Silicon

取代聚吡咯自掺杂导电机理的理论研究

A Theoretical Study on Self-doping Conducting Mechanism of Substituted Polypyrrole

植物自掺杂氮二氧化铈的制备及其氧缺陷成因

Synthesis of Ceria Doped with Nitrogen from Plants and Origin of Oxygen Defects

减小硅外延自掺杂影响的改进的二步外延法

Improved Two-step Silicon Epitaxial Method Reducing Autodoping Effect

外延淀积过程中的自掺杂抑制

The Control of Self-Doping During Epitaxial Deposition

在能带理论的基础上，通过EHMACC/CO程序计算了一系列一维导电化合物，讨论了取代基不同形态和不同烷基链长对其自掺杂导电性能的影响。

Base on the energy band theory , the one-dimension electronic band structures are calculated by EHMACC / CO , and the effects of different oxidized state and different alkyl chain length on its self-doped conductivity are discussed .

稀土硫属化合物具有通过自掺杂在金属导体与绝缘体间转变的能力，以及较高的电导率，可以提高锂硫电池中硫电极的导电性能。

Rare earth sulfur compounds for high melting point , low thermal conductivity and by the ability to shift between doping in the metal conductor and an insulator , and high Seebeck coefficient and electrical conductivity , Can improve the conductive performance of sulfur electrode in lithium sulfur batteries .

自支撑硼掺杂金刚石膜残余应力和微观应力的XRD分析

Analysis of residual stress and micro-stress in free-standing boron-doped polycrystalline diamond films by XRD

采用Si3N4-SiO2双层栅介质及自对准重掺杂浅结P+区研制出了一种抗辐射加固功率器件&VDMNOS-FET（垂直双扩散金属-氮化物-氧化物-半导体场效应晶体管）。

A radiation hardened N channel Si power device & VDMNOSFET ( Vertical Double Diffused Metal Nitride Oxide Semiconductor Field Effect Transistor ) is fabricated by using a double layer ( Si 3N 4 SiO 2 ) gate dielectric and a self aligned heavily doped shallow P + region .

交替沉积自组装不同酸掺杂聚苯胺薄膜的光谱及导电性能研究

Layer-by-layer self-assembly polyaniline thin film doped with different acids and its spectrum and conductivity performance