本征半导体

文中用于确定接触势垒高度的“本征半导体基态费米能级ESF，i”不同于半导体物理中所指的“本征费米能级Ei”。

The ground state Fermi level of the intrinsic semiconductor which can be used to determine the barrier height is different from the intrinsic Fermi level in semiconductor physics .

B、N原子掺杂分别使碳管转变为p型、n型半导体；BN共掺杂时，碳管仍为本征半导体。

B-doped and N-doped carbon tube change to p and n type semiconductor , respectively ; while the BN co-doped carbon tube are intrinsic semiconductors .

GB/T1550-1997非本征半导体材料导电类型测试方法

Standard methods for measuring conductivity type of extrinsic semiconducting materials

GB/T4326-1984非本征半导体单晶霍尔迁移率和霍尔系数测量方法

Extrinsic semiconductor single crystals & measurement of Hall mobility and Hall coefficient

本征半导体是电学性质基于纯材料的电子结构的半导体。

Intrinsic semiconductors are those in which the electrical behavior is based on the electronic structure inherent to the pure material .

作为一种本征n型的半导体材料，ZnO通过施主掺杂（如Al、Ga、Zr等），便可以获得较高的电子浓度，较低的电阻率，而在可见光区域仍能保持较高的透射率。

As an intrinsic n-type semiconductor material , we can get a higher electron density , low resistivity , while in the visible region can maintain a high transmission rate , if we dope ZnO by donor ( such as Al , Ga , Zr etc. ) .

本实验用惠斯通（Wheatstone）电桥测量了半导体电阻R随温度的变化规律，同时确定了本征半导体材料的禁带宽度△E。

The regular change of semiconductor resistance under different temperatures is obtained in measuring its resistance in a Wheatstone bridge circuit . The " band space " △ E of semiconductor material is determined .