分子束外延

分子束外延高性能P型GaAs单晶薄膜

MBE Growth of High Quality P Type GaAs Films

最后介绍了分子束外延技术在光电子器件方面应用的最新进展。

The recent progress in the applications of the MBE techniques to optoelectronic devices is finally presented .

分子束外延生长的α-Sn/lnSb薄膜的X射线双晶衍射分析

X-ray double Crystal Diffraction Analyses of MBE Grown α - Sn / InSb Film

GaP衬底上分子束外延Si时P偏析的抑制

Elimination of P segregation during molecular beam epitaxial growth of Si on gap ( 111 ) substrate

Si（100）和Si（111）衬底上的同质分子束外延

Molecular Beam Homoepitaxy on Si ( 100 ) and Si ( 111 ) Substrates

Si（111）分子束外延的生长动力学过程研究

The growth dynamics of si ( 111 ) MBE studied by RHEED intensity oscillations

激光分子束外延工艺用ZnO陶瓷靶材的研究

Study of ZnO ceramic targets used in laser molecular beam epitaxy Technology

分子束外延高Mg掺杂GaN的发光特性

Optical property of heavily Mg doped Gan grown by MBE

嵌入在Si衬底上的分子束外延GaAs层的微区喇曼和光致发光分析

Micro-Raman and Photoluminescence Studies of Embedded GaAs on Si by Molecular Beam Epitaxy

分解GaP源固态分子束外延生长InGaP/GaAs的结构和性能

Structure and properties of InGaP / GaAs epilayers grown by solid-source molecular beam epitaxy with a GaP decomposition source

热退火对低温分子束外延GaAs材料深中心的影响

Effects of thermally annealing on deep-levels of low temperature MBE GaAs

ZnO薄膜的分子束外延生长及性能

MBE Preparation and Characterization of ZnO Thin Film

掺碳p型GaAs和InGaAs的金属有机物分子束外延生长

MOMBE growth of carbon doped p-type GaAs and InGaAs

Co在GaAs（001）表面的分子束外延及其结构研究

Molecular beam epitaxial growth and structure of cobalt film on gaas ( 001 ) surface

分子束外延碲镉汞薄膜中VOID缺陷的研究

Void defect of molecular beam epitaxial HgCdTe layer grown on GaAs substrate

Si局域分子束外延技术

Si Local Molecular Beam Epitaxy

分子束外延低温生长GaAs的Raman光谱研究

Investigations on Raman Scattering of GaAs Grown at Low Temperature by Molecular Beam Epitaxy

分子束外延Gd2O3、Nd2O3高介电纳米薄膜的结构研究

Structural Study of Molecular Beam Epitaxial Grown Gd_2O_3 and Nd_2O_3 High-k Nano-thick Film

Si（1－x）Gex／Si量子阱发光材料的分子束外延生长及其结构研究

Molecular beam epitaxy growth and characterization of luminescent si_ ( 1-x ) ge_x / si quantum structures

GaAs基分子束外延材料的市场和产业化

The Market and Industrialization Forecast of GaAs-based MBE Materials

低温分子束外延GaAs薄膜的带边二次电光效应和光折变效应

Band Edge Quadratic Electro-Optical Effect and Photorefractive Effect of Low Temperature-Growth MBE GaAs

等离子体增强分子束外延生长ZnO薄膜及光电特性的研究

Study of Optical and Electrical Properties of ZnO Thin Films Grown by Plasma-enhanced Molecular Beam Epitaxy

在Si（211）衬底上分子束外延CdTe的剪切应变

Shear strain in MBE grown CdTe films on Si ( 211 ) substrates

GaAs均匀点状结构的分子束外延图形生长

Formation of GaAs uniform dot structures grown by MBE on patterned substrates beam crystallizations

GaN材料的射频等离子体分子束外延生长及其掺杂特性研究

Growth and P-type Doping Property of GaN by RF Plasma Molecular Beam Epitaxy

Si衬底上分子束外延Ge，Si时的反射式高能电子衍射强度振荡观察

RHEED intensity oscillations in the process of molecular beam epitaxy growth of Ge and Si on Si substrates

分子束外延P型Hg（1-x）CdxTe少子寿命的研究

Minority Carrier Lifetime in P-type Hg_ ( 1-x ) Cd_xTe Grown by MBE

分子束外延Pb（1-x）EuxTe材料的红外透射谱研究

Infrared transmission spectra of MBE-grown pb_ ( 1-x ) eu_xte films

分子束外延GaAs中的Sn受主态

Tin Acceptor in Molecular Beam Epitaxial GaAs

Si（100）和（111）面和在其上Ni分子束外延的反射高能电子衍射研究

Study of si ( 100 ) and ( 111 ) surfaces and molecular beam epitaxy of Ni on them by RHEED