外延

X射线衍射图谱显示Bi2Sr2Co2Oy热电薄膜沿c轴外延生长。

X-ray diffraction showed that films were extension growth along c-axis .

假设W是这样一个概念：“是一个概念的外延，但不归于那概念之下”。

Let W be the concept : to be an extension of a concept under which it does not fall .

单晶外延层厚度的X射线双晶衍射测定

Thickness Determination of Single Crystal Epitaxial Layer by X-Ray Double-Crystal Diffraction

退火对AlGaInP/GaInP多量子阱LED外延片性能的影响

Influence of Thermal Annealing to the Characteristics of AlGaInP / GaInP Multiple Quantum Wells LED Wafers

两微米外延N阱CMOS艺的研究

Study of 2 μ m Epitaxial N-Well CMOS Technology

集成光学用掺Cr2O3：LN单晶薄膜的液相外延

Liquid Epitaxy of Cr_2O_3 Doped LiNbO_3 Film used in Integrated Optics

激光分子束外延工艺用ZnO陶瓷靶材的研究

Study of ZnO ceramic targets used in laser molecular beam epitaxy Technology

金属有机物化学汽相外延法生长ZnO薄膜

ZnO Thin Films Grown by Metal Organic Chemical Vapor Deposition

Raman谱分析结果表明外延层为完全应变的。

The Raman spectroscopy analyses manifest that the epitaxial layer is completely strained .

硅衬底碳化对异质外延SiC薄膜结构的影响

Effect of carbonization on the heteroepitaxial growth of SiC films on Si substrates

分解GaP源固态分子束外延生长InGaP/GaAs的结构和性能

Structure and properties of InGaP / GaAs epilayers grown by solid-source molecular beam epitaxy with a GaP decomposition source

电子衍射条件对Si（111）外延时反射式高能电子衍射强度振荡的影响

The effect of electron diffraction conditions on RHEED intensity oscillations during si ( 111 ) MBE

750℃下用低压化学汽相沉积在Si上外延生长单晶SiC薄膜

Epitaxial Monocrystalline SiC Films Grown on Si by Low-Pressure Chemical Vapor Deposition at 750 ℃

ZnO薄膜的分子束外延生长及性能

MBE Preparation and Characterization of ZnO Thin Film

本文探讨了工业工程（IE）的内涵外延、学科体系、主要职能和基本特征；

Having hold a discussion on Industrial Engineering 's connotation and extension .

电化学原子层外延及Te、Cd元素欠电势沉积研究

Investigations on the ECALE and on the Underpotential Deposition of Te and Cd Elements

Ga（1-x）AlxAs/GaAs双异质结激光器的液相外延研究

Liquid-phase epitaxy study of ga_ ( 1-x ) al_x as / gaas double heterojunction lasers

横向过生长（LEO）外延GaN材料及其生长机理

Lateral epitaxy overgrowth ( LEO ) of GaN and growth mechanism

GaAs（001）表面外延生长Mn薄膜的XPS研究

An XPS Study of Mn Thin Films Grown on gaas ( 001l ) surface

GaAs三元异质外延层厚度测量的X射线衍射比强度法

X-Ray Diffraction Intensity Ratio Method for the Thickness Measurement of Ternary Heterogeneous Epitaxial Layers on GaAs Substrate

硅基GaN外延晶体学位相关系和生长机理研究

Investigation of the orientation relationships and growth mechanism of GaN epitaxy on silicon

外延生长条件对GaN形貌的影响

Effect of Epitaxy Growth Conditions on Morphology of GaN

单晶Ag基底上YBCO膜外延机理的研究

Epitaxial growth mechanism of YBCO films on Ag single crystals

GaAs外延层蒸镀Cr和Au膜制作欧姆接触及分析

A Technique of Making Ohmic Contact with Cr and Au Plating Evaporated on the GaAs Epilayer

合作开发了适合制作IGBT的异型厚外延材料。

The thick epitaxial substrate material proper for manufacturing IGBT is developed .

GaAs外延层掺杂分布的研究

Study on Doping Profile of GaAs Epilayer

Cr~（3+）离子激活的YAG外延单晶荧光层

Cr ~ ( 3 + ) - Activated YAG Monocrystalline Luminescent Layers Grown by Liquid Phase Epitaxy

Hg（1-x）CdxTe外延薄膜表面对红外透射光谱的影响

Effect of the Surface of HgCdTe Epilayers on Infrared Transmission Spectra

最近报道显示，硼掺杂同质外延金刚石层暴露在氘离子束中能形成浅施主态的n型电导。

Recent report showed that exposure of p-type ( B doped ) homoepitaxial diamond layers to deuterium plasma can form n-type diamond with a shallow donor state .

由于制备SiC体单晶非常困难而且价格昂贵，因此SiC薄膜的异质外延生长是重要的。

The heteroepitaxy of the SiC film is important since high quality SiC wafer is expensive and hardly to be achieved .