受主杂质

本文综述了TiO2电容-压敏陶瓷性能以及施主杂质、受主杂质、烧结助剂的研究现状，并对其进行了展望。

The recent developments on the research for the TiO2 capacitor-varistor ceramics were reviewed in this paper , which contain donor impurity , acceptor impurity and sintering improver , and the evolution of it was forecast at the same time .

结果表明，V离子是一种受主杂质，热处理后，其价态产生了变化，尤其是在655℃热处理时价态变化程度最明显，与V2O5的差热分析（DTA）结果相吻合。

Results show that V5 + is an acceptor impurity whose valence changes after heat treatment especially at 655 ℃ . The phenomenon is consistent with the result of the differential thermal analysis ( DTA ) .

在p型和n型半导体材料之间渡越区中的一个面，在这里施主杂质和受主杂质的浓度相等。

The surface in the transition region between p-type and n-type semiconductor material at which the donor and acceptor concentration are equal .

着重分析讨论了引入受主杂质Mn对材料的半导化的影响，并采用复合缺陷模型自洽地解释了实验现象。

A complex-defect model was adopted to explain the explain the experimental results well .

受主杂质Mn对（Ba，Pb）TiO3系高温PTC热敏陶瓷的影响

Manganese influence on the semiconductive ( Ba , Pb ) TiO_3 ceramics

本论文就ZnO中的本征缺陷性质、受主杂质与H的复合体的性质以及p型ZnO的导电性质进行了深入研究。

In this dissertation , we investigate properties of native defects and acceptor-H complexes , as well as the conductivity of p-type ZnO .

共掺杂方法可以一定的条件下提高受主杂质的浓度，从而有利于得到高空穴浓度的p型ZnO薄膜。

The co-doping method can increase the solution of the acceptor in fixed condition , so it can help to obtain the high hole concentration p-ZnO thin films .

施受主杂质Nb，Mn共掺BaTiO3陶瓷的制备方法及其PTC特性

The Manufacturing Methods and PTC Characteristics of BaTiO_3 Ceramics Doped with Donor Nb and Acceptor Mn

探讨了施主杂质、受主杂质等微量元素及玻璃料对PTC陶瓷性能的影响。

Effects of donors , acceptors , and other trace elements and the frit on properties of the PTC ceramics are discussed .

并指出Mn在此为受主杂质，过量的Mn使晶粒电阻率增大，损耗增加，它促进晶粒生长，却又使气孔率上升。

The Mn is acceptor and helps grain growth . The resistivity of grain , loss tangent and the rate of air hole would be increased if the quantity of Mn is excess .

高施主掺杂BaTiO3陶瓷中施、受主杂质相互作用的一种异常现象

An Anomaly Phenomenon of the Interaction Between Donor Doping and Acceptor Doping in Highly Donor-Doped BaTiO_3 Ceramics

用SEM和XPS进一步分析发现，在2h退火过程中，Au大量向CZT体表层扩散，作为受主杂质占据Cd位，对CZT体表层进行了p型重掺杂，形成了M-p+-p型欧姆接触。

From SEM and XPS analyses , Au was diffused into the CZT bulk during the annealing , and occupied the Cd sites as acceptors . Thus , heavy doped p-type layer was formed , and M-p ~ + - p Ohmic contact was obtained .

其次，在常温下，本征CdTe薄膜均为高阻半导体。为了改善其导电性能，通常向CdTe薄膜中掺入施主或受主杂质，其中离子注入技术是掺杂方法之一。

Secondly , in normal temperature , CdTe thin films are high resistance semiconductor , for improving its electricity capability , we commonly inject benefactor or acceptor impurities into the pure CdTe thin films , the Ion influx technique is a good method among many adulteration means .

用光热电离光谱方法研究了硅中硼受主杂质能级在0～11T磁场下的塞曼效应。

The Zeeman effect of B acceptor in Si was investigated with PTI technique under magnetic field up to 11T with B →∥ K →∥( 100 ) .

高纯度砷化镓外延薄膜剩余受主杂质的研究

Residual acceptor impurities in high purity LPE and VPE GaAs

研究结果表明，不同受主杂质的掺杂其作用机理并不相同；

Results indicate that different acceptor dopants play different roles due to different doping mechanisms .

能谱分析表明：受主杂质主要偏析于晶界，这有利于形成具有良好压敏电阻特性的晶界势垒。

The results of Energy Spectra show that acceptors Sr are mainly segregated in the grain boundary , which greatly contribute to the form of varistor barrier .

这是由于受主杂质的引入利于产生氧空位，导致钡空位浓度下降的结果。

The reason is that oxygen vacancies are formed due to the introduction of acceptor impurities which give rise the decrease of the concentration of Ba vacancies .

分数维近似方法研究：矩形量子阱线中浅施主杂质结合能探用傅里叶变换光谱仪同时测定半导体浅施主和浅受主杂质浓度的装置

Fractional-dimension approach for shallow-donor states in quantum-well wires an experimental set-up combined with a Fourier transform spectrometer for simultaneous determination of concentrations of both shallow acceptors and donors in semiconductors

实验表明，施主杂质（La~（3+））和受主杂质（Mn~（2+））掺杂量的大小对薄膜半导化和绝缘化程度都有影响。

The experiment results demonstrated that the semiconducting and insulating process were influenced by the donor dopant ( La ~ ( 3 + )) and acceptor dopant ( Mn ~ ( 2 + )) .

对受主掺杂的研究，包括对Mn、Co、Cr三种受主杂质掺杂机理的研究，受主杂质掺杂方式的研究以及固定受主杂质摩尔总量不变的二元、三元受主掺杂研究；

The study of acceptor doping contained the doping mechanisms of the different acceptor dopants such as Mn , Co , Cr , the modes of acceptor doping , double doping and multi-acceptor doping with limited doping amount .