非平衡载流子

本文提出一种测量半导体中非平衡载流子寿命的新方法。

A new method of measuring excess carriers lifetime in semiconductors is described .

低温生长GaAs非平衡载流子的超快动力学特性

Ultrafast carrier dynamics of low temperature grown GaAs

通过求解非平衡载流子的扩散方程导出了反射式NEAGaN光电阴极的量子效率公式。

The quantum yield formula of reflection-mode NEA GaN photocathode was gotten by solving the diffuse equation of non-equilibrium carriers .

确定了低温下非平衡载流子复合率及扩散速度的降低，是导致SRAM断电后数据残留的主要原因。

The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature .

结合RSD工作的典型电路建立电路方程组，采用Runge-Kutta方法求解，由非平衡载流子分布得到了RSD的电压，电流波形。

Combined with the typical circuit of RSD , the circuit equations are written , the voltage-time and the current-time waveform are gotten by means of Runge-Kutta algorithm and the non-equilibrium carrier distribution .

用微波方法测量半导体非平衡载流子寿命

Application of Microwave Method to Measurement of Nonequilibrium Carrier Lifetime

半导体中非平衡载流子的输运过程（Ⅱ）

Transport of Non-Equilibrium Carriers in Semiconductors (ⅱ)

文中采用拓扑有限元法，得出非平衡载流子扩散方程的拓扑有限元模型。

Topology-finite-element method is used and a topology-finite-element model for diffusion equation of non-equilibrium carriers is obtained .

高频1.09μm红外光电导衰减法测试硅单晶非平衡载流子寿命

Measurement of Minority Carrier Lifetime in Silicon by the Method of 1 . 09 μ m Infrared High Frequency Photoconductive Decay

在描述载流子输运过程的玻尔兹曼方程的碰撞项中考虑了带间跃迁的贡献，从而将它推广到存在非平衡载流子的情况。

The interband transition is taken into account in the collision term of the Boltz-mann equation which describes the carrier transport process in semiconductors .

介绍了测量片状小损耗介质介电常数、半导体电导率及非平衡载流子寿命等参数的结果。

The measurement results of complex dielectric constants of low loss and thin flake materials , conductivity and nonequilibrium charge carrier lifetime of semiconductor are introduced .

用时间分辨激光光谱学方法研究了a-Si：H/a-SiNx：H多层膜光生载流子初始动力学过程，分析了非平衡载流子的热释和复合机制。

The initial dynamics of photogenerated carriers in a-Si : H / a-SiN_x : H multilayers has been investigated with time-resolved laser spectroscopy . The mechanisms of thermalization and recombination of these carriers are analysed .

由此导出了非平衡载流子寿命，复合几率的统计表达式，以及包括产生-复合过程的电荷连续性方程和稳态输运过程的电流方程。

Therefore the equation is extented to the case where non-equilibrium carriers exist , from which we here derived the statistical expressions of life-time and the recombination probability , the charge continuity equation including carrier generation-recombination as well as the current equation of steady transport process .

提出在低电压（小于07V）下，衬底电极的作用可近似等效成栅，然后依据电荷增量（非平衡过剩载流子）的方法，推导出该结构的IV特性方程。

It is demonstrated that the substrate electrode can be regarded as a gate under the condition of low voltage supply ( < 0.7V ) . The equation of its I-V characteristics is then deduced according to the method of charge increment .

由此，用Kronig-Penney方法计算了多晶硅非平衡少数载流子扩散长度。

Thus we calculated the non-equilibrium minority carrier diffusion length in the polycrystalline silicon by using the Kronig-Penney 's method .

多晶硅非平衡少数载流子扩散长度的理论计算

A calculating method of non-equilibrium minority carrier diffusion length in the polycrystalline silicon

本文对飞秒激光辐照单晶硅后非平衡自由载流子浓度的超快变化过程及飞秒激光辐照硅光电探测器的效应进行了研究。

Study of effect of photoelectric detectors irradiated by femtosecond pulsed laser should be profoundly carried out .

通过分析SiGeHBT超薄基区中非平衡效应对载流子温度，扩散系数等参量的影响，建立了超薄SiGeHBT基区渡越时间模型。

The influences of non-equilibrium effect on the carrier temperature and diffusion coefficient in the ultra-thin-base SiGe HBT are analyzed in this paper . This leads to the forming of a base transit time model for ultra-thin-base SiGe HBT .