少数载流子寿命

碲镉汞pn结中少数载流子寿命的测量

Measurement of Minority Carrier Lifetime in HgCdTe p-n Junctions

开路电压衰减法（OCVD）具有直接、简单、重复性好等特点，可准确测量器件的少数载流子寿命。

Open circuit voltage decay ( OCVD ) is attractive in the measurement of the minority carrier lifetime in the devices due to its straight , easy operation and good repeatability .

利用MOSC的Ct瞬态特性快速计算少数载流子寿命

Rapid calculation of minority carriers lifetime by means of the MOS capacitor 's c & t transient characteristics

采用铂液态源扩散降低少数载流子寿命τ从而缩短反向恢复时间trr；

Spin-on platinum diffusion was used to control lifetime of minority carrier to reduce the reverse recovery time trr .

少数载流子寿命横向非均匀分布的快恢复二极管特性

Minority - Carrier Life Time Lateral Non-Uniform Distribution Fast Recover Diode

中子辐照损伤区对硅少数载流子寿命的影响

Influence of Disordered Regions on Minority Carrier Lifetime in Neutron Irradiated Si

一种测量少数载流子寿命的新方法

A new method to measure the lifetime of minority-carrier

掺金硅中少数载流子寿命计算

Minority carrier lifetime calculation of silicon doped gold

少数载流子寿命测试系统研究

Study on measuring system for minority carrier lifetime

红外高频光电导衰减法测试硅单晶少数载流子寿命是优越的方法；

Infrared high frequency photoconductive decay method is suited for measuring silicon minority carrier lifetime ;

碲镉汞晶片少数载流子寿命面分布的自动测试技术

Automatic measurement technology for the area distribution of the minority carrier lifetime of HgCdTe wafer

少数载流子寿命的简易测试法

Simple Measurment of Minority Carrier Lifetime

对微波光电导法测量半导体少数载流子寿命的测试系统进行灵敏度分析。

The sensitivity for the semiconductor minority carrier lifetime measurement system was determined using microwave photoconductance decay .

并由此可提供一种测定辐射复合系数和少数载流子寿命的方法。

A method is proposed to determine the coefficient of radiative re-combination and the lifetime of minority carriers .

这些晶体具有较好的横向组分均匀性、较低的载流子浓度和较长的少数载流子寿命。

The results showed that the crystals possess good radial composition uniformity , low carrier concentration and high minority lifetime .

空间电荷区和晶界复合对多晶太阳电池基区少数载流子寿命的影响

Influence of carrier recombination in the space charge region and ingrain boundaries on minority carrier lifetime in the base region of polysilicon solar cells

经检测无位错及漩涡缺陷，单晶的少数载流子寿命达到1500μs以上。

The minority carrier lifetime of the crystal is not less than 1500 μ s and there is no dislocation and swirl defect in the crystal .

实验结果表明：四种组分的探测器在液氮温度下其少数载流子寿命值范围在18~407ns之间。

Our results show that the carrier lifetime is in the range of 18 ~ 407 ns at liquid nitrogen temperature for the measured detectors of four compositions .

太阳电池基区的少数载流子寿命是影响电池效率的重要因素之一。

The minority carrier lifetime (τ) in the base region of a solar cell is one of the most important parameters that affects the conversion efficiency of the device .

建立傅里叶变换步进扫描时间分辨光电导光谱，并研究太阳电池中与转换效率密切相关的少数载流子寿命。

We report on the establishment of Fourier transform step-scan time-resolved photoconductivity spectroscopy to study the solar cell 's minority carrier lifetime , which has close relationship with its conversion efficiency .

我们又进一步研究了退火对少数载流子寿命和表面复合速率的影响，因为其对太阳能电池的最终效率影响很大。

An extensive study has been carried out on the effect of thermal annealing on carrier lifetime and surface recombination velocity , which affect the final output of the solar cell .

本文介绍一种测量碳化硅半导体少数载流子寿命的方法，叙述有关的原理和测试设备，并就对测试结果有极大影响的谐振干扰、点接触的电学性质和电发光特性等问题进行了试验。

A method for measuring the minority carrier lifetime in silicon carbide semiconductor by the injection electroluminescence at point contacts is presented . The principles involved and measuring equipment used are described .

由于快中子辐照硅晶体产生辐照损伤–缺陷团对半导体材料的影响最重要的是载流子的去除效应和对少数载流子寿命。

The fast neutron irradiation silicon crystals produced radiation damage-defect groups . The most important influence of radiation damage to semiconductor material is the removal effects of carrier and minority carrier lifetime reduction .

在制备多晶硅太阳能电池材料的过程中，离子注入和机械加工往往使材料表层微结构产生缺陷，恶化了材料的电学性能，降低了少数载流子寿命。

In process of making polycrystalline sillicon solar cell material , the microstructure defect of material surface worsenes electric character of material and reduces minority carrier life because of ion injecting and maching .

GB/T1553-1997硅和锗体内少数载流子寿命测定光电导衰减法外加磁场微波等离子体喷流对平面电磁波衰减的实验研究

Standard test methods for minority carrier lifetime in bulk germanium and silicon silicon by measurement of photoconductivity decay Experimental study on the effect of applied magnetic field on plane wave attenuation by microwave plasma plume

采用这种方法测定了若干碳化硅单晶的少数载流子寿命，测得值一般低于4.2×10~（-9）秒。

By means of this method , the minority carrier lifetimes for some silicon carbide single crystals have been measured , and for most crystals these values are found to be smaller than 4.2 × 10-9 sec .

通过与太阳电池暗伏安特性和负载特性研究相结合，进一步分析和讨论了少数载流子寿命与短路电流、开路电压和转换效率的关系。

Furthermore , we analyze the correlation of the minority lifetime with the short-circuit current , open voltage and conversion efficiency , by the aid of the investigation of solar cells ' dark I-V characteristics and load characteristics .

实验结果表明，上述参数的改善，是轰击后界面态密度减小和基区少数载流子寿命增长的结果，而且与轰击时间及束流密度有关。

Our experimental results show that the improvement of parameter as above is owing to the increasing of minority carrier lifetime and the decreasing of interface state density , and the improvement is relevant to the bombardment time and the beam current density for the same energy of bombardment .

但是，其开关功耗随着开关频率的提高而增大以至于不得不采用寿命控制技术（掺金、铂和辐照等）来降低少数载流子寿命从而降低开关功耗。

However , the switching power loss of Si p-i-n diode increase with the switching frequency so that it is necessary to reduce the switching power loss by lifetime control technology which employs lifetime killer such as Au , Pt or radiation to lower the stored charge ( Qs ) .

MIS结构C-t过程的动力学分析及少数载流子产生寿命空间分布测量

Dynamical Analysis of the C-t Process in MIS Structure and a Method for Measuring the Spatial Distribution of the Generation Lifetimes of Minority Carriers in Semiconductors