少数载流子

用面垒探测器测定n型硅中少数载流子的扩散长度

The diffusion length of minority carriers in n-type silicon measured with a surface barrier detector

利用MOSC的Ct瞬态特性快速计算少数载流子寿命

Rapid calculation of minority carriers lifetime by means of the MOS capacitor 's c & t transient characteristics

重掺杂P型Si（1-x）Gex层中少数载流子浓度的低温特性

Low Temperature Characteristics of Minority Carrier Concentration in Heavily Doped p SiGe Layers

碲镉汞pn结中少数载流子寿命的测量

Measurement of Minority Carrier Lifetime in HgCdTe p-n Junctions

少数载流子在Si－SiO＿2界面的复合对双极器件的影响很大。

The recombination of minority carriers at Si-SiO_2 interface has a great effect on bipolar de-vices .

用MOS电容瞬态电流-电容法直接测定少数载流子的体产生寿命分布和表面产生速度

Direct Determination of the Bulk Generation Lifetime Distribution and Surface Generation Velocity of Minority Carriers by the MOS-C Transient Current-Capacitance Method

由MOS结构的瞬态响应确定少数载流子体产生寿命和表面产生速度的新方法

A New Method for Determining the Bulk Generation Lifetime and Surface Generation Rate of Minority Carriers from the Transient Response of a MOS Structure

MIS结构C-t过程的动力学分析及少数载流子产生寿命空间分布测量

Dynamical Analysis of the C-t Process in MIS Structure and a Method for Measuring the Spatial Distribution of the Generation Lifetimes of Minority Carriers in Semiconductors

对于高频时MOS结构电容的理论计算，提出了第二个假设，在φ≤φ（min）区间，少数载流子浓度遵从玻尔兹曼统计分布。

For the analytical calculation of MOS capacitor in high frequency case , the second assumption is proposed : At j ≤ j_ ( min ), the density of minority carriers is given by Boltzmann statistics .

采用铂液态源扩散降低少数载流子寿命τ从而缩短反向恢复时间trr；

Spin-on platinum diffusion was used to control lifetime of minority carrier to reduce the reverse recovery time trr .

由此，用Kronig-Penney方法计算了多晶硅非平衡少数载流子扩散长度。

Thus we calculated the non-equilibrium minority carrier diffusion length in the polycrystalline silicon by using the Kronig-Penney 's method .

通常的太阳电池收集的少数载流子要么是产生于p-n结，要么是少数载流子距离结的距离必须小于其扩散长度。

Generally the minority carriers accumulated by the cell are generated either directly from the p-n junction or the distance between the generated minority carriers and the junction is less than the diffusion length of the minority carriers .

详细阐述了LAPS的基本构造，并通过分析LAPS的电路模型及少数载流子的影响得出了各种参数对LAPS的影响，从而为制造高性能的LAPS提供了理论基础。

On the basis of analysis on the diffusion of minority carrier and the equivalent circuit of the LAPS , the effects of various parameters on LAPS are deduced , and a basis for fabrication of high performance LAPS is set .

但已获专利的TMBS结构可消除到漂移区的少数载流子注入，从而最大程度地减少存储的电荷，以及提高转换速度。

The patented TMBS structure , however , diminishes minority carrier injections to the drift region , minimizing stored charges and improving switching speed .

从而提出了一种无需Zerbst图而能同时确定少数载流子体产生寿命和表面产生速度的新方法。

Then a new method for determining simultaneously the bulk lifetime and surface generation rate of minority carriers is presented , which needs no Zerbst plot .

当传感器在2mA的正向偏置电流下，由于少数载流子的不连续性以及多数载流子的注入，传感器电阻的正温度系数（PTC）区拓宽到573K（＋300℃）以上。

When the sensor is forward biased at a current of 2 mA , the range of positive temperature coefficient of the sensor resistance is extended up to + 300 C as a result of the minority current discontinuity and majority carrier injection .

开路电压衰减法（OCVD）具有直接、简单、重复性好等特点，可准确测量器件的少数载流子寿命。

Open circuit voltage decay ( OCVD ) is attractive in the measurement of the minority carrier lifetime in the devices due to its straight , easy operation and good repeatability .

少数载流子寿命横向非均匀分布的快恢复二极管特性

Minority - Carrier Life Time Lateral Non-Uniform Distribution Fast Recover Diode

光致开路电压衰减法测量少数载流子的寿命

Measurement of Minority Carrier Lifetime from Photo-Induced Open-Circuit Voltage Decay

中子辐照损伤区对硅少数载流子寿命的影响

Influence of Disordered Regions on Minority Carrier Lifetime in Neutron Irradiated Si

太阳电池中少数载流子的寿命测量

Minority Carrier Life Time Study for Si Solar Cells

考虑了晶粒间界厚度和其中的少数载流子复合，假设晶粒间界和晶粒具有不同的少数载流子迁移率和寿命。

The minority carrier recombination in grain boundary and its width are considered .

多晶硅非平衡少数载流子扩散长度的理论计算

A calculating method of non-equilibrium minority carrier diffusion length in the polycrystalline silicon

一种测量少数载流子寿命的新方法

A new method to measure the lifetime of minority-carrier

多晶硅发射区中的少数载流子注入理论

Theory about Minority Carrier Injection into Polysilicon Emitter

掺金硅中少数载流子寿命计算

Minority carrier lifetime calculation of silicon doped gold

少数载流子寿命测试系统研究

Study on measuring system for minority carrier lifetime

红外高频光电导衰减法测试硅单晶少数载流子寿命是优越的方法；

Infrared high frequency photoconductive decay method is suited for measuring silicon minority carrier lifetime ;

碲镉汞晶片少数载流子寿命面分布的自动测试技术

Automatic measurement technology for the area distribution of the minority carrier lifetime of HgCdTe wafer

用于修饰或说明其中既有多数载流子又有少数载流子的半导体器件。

Pertaining to a semiconductor device in which both majority and minority carriers are present .