普通二极管

  • 网络DIODE;General Purpose Diode;generic
普通二极管普通二极管
  1. 应用普通二极管的远程温度测量

    Measure of Long-distance Temperature Using Ordinary Diode

  2. 介绍了一种利用普通二极管和模数、数模转换芯片测量远程温度的电路,给出了系统构成框图,推导了温度测量原理,并就文中介绍的系统,给出了测量温度的微控制器程序流程。

    Briefly introduced a circuit for long-distance temperature measure using ordinary diode . The system structure was presented . also discussed the principle of temperature measure .

  3. 本文描述了半导体断路开关(SOS)的制作及性能测试。制作方法采用普通二极管类似的扩散工艺,但其制作工艺的关键在于深结的扩散。

    The fabrication process and characteristics of the Semiconductor Opening Switch ( SOS ) are reported in this paper .

  4. 在此情况下,必须采用同步整流(Synchronousrectification,SR)技术,即采用功率MOSFET代替传统的肖特基二极管和普通二极管进行整流。

    In this situation , Synchronous rectification ( SR ) should be adopted . It adopts power MOSFET instead of traditional schottky diode and common diode to rectify .

  5. 采用功率MOSFET取代普通二极管或肖特基二极管的同步整流技术,可以使低压大电流变换器的效率得到极大的提高。

    Applying the synchronous rectifier technology in which MOSFET replaces common diodes or schottky diodes can increase the efficiency of low-voltage , great-current transformer .

  6. 使用肖特基二极管D1和D2,而不是普通二极管,为的是减少总线上低状态电压,改进噪声极限。

    Using Schottky barrier diodes for D1 and D2 rather than common diodes reduces the low-level voltage on the bus , improving the noise margin .

  7. 硅普通二极管的典型应用

    The typical application of common silicon diedes

  8. 用普通二极管测量温度

    Measuring Temperature With Common Diodes

  9. 对ZnO/PS异质结的Ⅰ-Ⅴ特性曲线的测量表明,异质结呈现出与普通二极管不同的整流特性,其反向电流不饱和。

    The I-V characteristics of the ZnO / PS heterostructure were different from that of the common diodes , whose reverse current was not saturated .

  10. 目前,在高压大功率领域中,随着现代电力电子技术的飞速发展和广泛应用,由普通二极管整流器所造成的电网谐波污染问题日益严重。

    With the rapid development and wide application of the modern power and electronic technology , the harmonic pollution of the power grid caused by the common diode rectifier is increasingly serious .

  11. 接收端采用APD接收,光电响应比以往的普通光电二极管提高数千倍。

    The receiver adopts the APD , and the photoelectric response is improving thousands of times than the previous general photodiodes .

  12. 超辐射发光二极管(SLD)具有不同于半导体激光器和普通发光二极管的优异性能。

    Superluminescent light emitting diode is a semiconductor light source whose high performance is between those of laser diode and light emitting diode .

  13. 针对普通发光二极管出光效率不高的问题,在第4章中利用光子晶体来提高发光二极管的光学性能,主要包括出光效率和远场分布。

    In Chapter 4 , we use PhCs to enhance the LEDs optical performance , including extraction efficiency and far field pattern .

  14. 他使用普通的二极管激光、一简单镜片以及产生红外线屏障覆盖门窗的电源。

    He uses a common diode laser , a simple lens and a power supply to generate an infra-red barrier that can cover a door or window .

  15. 利用普通的p+nn+二极管芯片,通过掩蔽扩散选择性地掺入深能级杂质,制备出了掺Au、Pt的MLD快恢复二极管。

    Based on the p + nn + diode wafer , the MLD fast recover diode with Au or Pt doped is fabricated by diffusing deep level impurity selectively .

  16. 肖特基二极管是利用金属与半导体之间接触势垒进行工作的一种多数载流子器件,与普通的PN结二极管相比,它具有正向导通电压低,响应速度快等优良特性。

    Schottky barrier diode is a kind of majority carrier device , using the contact barrier formed between metal and semiconductor to work . It has the advantages of low turn-on voltage and high response frequency , compared with PN junction diodes .

  17. 采用普通按键、发光二极管对单片机外围电路进行了设计。

    Design external circuit using button and LED .