体效应

对于由体效应决定的暗电流，SHPD略优。

For dark current determined by bulk effect , SHPD is slightly better .

一种微波集成宽带变容管调谐体效应振荡器的设计

A microwave integrated circuit design of wideband varactor tuned bulk effect oscillator

变容二极管调谐体效应振荡器的CAD

CAD Of Varactor - Tuned Gunn Diode Oscillator

最终，在微带线上制成了W频段平面集成体效应管压控振荡器，并进行了测试。

Finally a W-band microstrip integrated Gunn VCO is designed completely and tested .

V波段体效应振荡器

V - Band Gunn - Effect Oscillator

Q波段混合集成体效应振荡器的研究

A study of Q-band hybrid integrated Gunn oscillator

W波段宽带机械调谐体效应振荡器

W-band Gunn oscillators with wide mechanical tuning range

E波段GaAs体效应二极管

E - Band GaAs Gunn Diodes

动态体效应CMOS施密特触发器

CMOS Schmitt trigger by dynamic body - bias

介绍了一种新型的双区阴极结构在W波段体效应二极管中的实现，并研制出了样品器件。

A new structure of two area cathodes applied in W-band Gunn diodes was introduced and made .

GaAs体效应器件中阴极深凹槽掺杂分布引起的静止畴

Stationary Domain Originated from the Cathode Deep Recess Doping Distribution in GaAs Transferred Electron Devices

本文利用电抗补偿的概念对集成串联体效应振荡器进行电抗补偿，使调谐带宽增加。在C波段，相对调谐带宽达10%以上；

By the use of the concept of reactance compensation , the integrated series bulk effect oscillator , being compensated to increase the tuning bandwidth is reported .

薄膜SOIMOSFET浮体效应的抑制优化研究

Suppression Study of Floating Body Effect in SOI MOSFET 's

SOI器件中瞬态浮体效应的模拟与分析

Model and Analyses of Transient Floating-Body Effect of SOI Devices

部分耗尽SOIMOSFET中的浮体效应

Floating Body Effects in Partially Depleted SOI MOSFET 's

铅和汞诱发非整倍体效应的CREST染色微核实验研究

Study on the aneuploid effects of lead and mercury using micronucleus assay and CREST staining

而采用埋氧层是间断的图形化SOI衬底是解决浮体效应和自加热效应的最简单的方法。

Patterned SOI technology is the simplest way to overcome floating body effects and self-heating effects .

SOI结构中的薄体效应

Thin Bulk Effects in SOI Structure

这种抑制浮体效应的方法不增加器件面积，而且与体硅MOSFET工艺完全兼容。

This method has the same device area and is completely compatible with the bulk MOSFET process .

但是，SOI技术面临浮体效应和自加热效应。

However , SOI technology has to face the problems of floating body effects and self-heating effects .

Ku波段低相位噪声体效应管

Ku Band Low Phase Noise Gunn Diodes

模拟计算表明，利用薄体效应，可以形成以单晶硅为衬底的，阈电压较低的新型薄膜MOS晶体管。

The simulation presupposes that it is possible to develop new MOS thinfilm transistors with crystal silicon substrate and lower threshold voltage .

本文叙述X波段GaAs功率体效应二极管的设计及其研制结果。

This paper presents the design and the experimental results of the X-band GaAs power Gunn Diode with an emphasis laying on the analysis of the thermal parameters of the diode .

从那时起，BEC就成为研究强关联系统的各种量子多体效应的的平台。

From then on , BECs have become a popularly investigated platform for various effects of quantum many-body interaction in strongly correlated systems .

工艺和性能模拟分析表明，此结构具有SOI器件低泄漏电流和低输出电容的特性，而且能抑制自加热效应和浮体效应。

The novel LDMOSFET did not degrade the advantage of SOI structure 's low leakage current and parasitic capacitance , which also suppressed the self-heating effects and floating body effects .

在此基础上，研制了Q波段悬置带线体效应振荡器，当频率为46GHz时，其最大输出功率为74mW，并具有1.2×10~（-4）的频率稳定度。

The numerical results have been A Q-Band suspended substrate stripline Gunn oscillator is developed and the maximum output power of 74 mW at 46 GHz is obtained . The frequency stability is 1.2 × 10 ~ ( - 4 ) .

自从玻色-爱因斯坦凝聚（BEC）在实验上实现以后，BEC就成为研究强关联系统的各种量子多体效应的平台，激发了许多新的研究领域。

Since BEC was realized in experiments , it has become an investigated platform for various effects of quantum many-body interaction in strongly correlated systems and has stimulated many new research fields .

为了减少NMOS开关阈值电压变化引起的信号失真，设计了一种适用于低压开关电容电路的体效应补偿开关，并利用该电路实现了一阶非反相开关电容（SC）低通滤波器。

Aimed at reducing distortion due to the threshold voltage variations of an NMOS switch , the paper introduces the design of a body effect compensated switch applicable to low voltage switched capacitor circuits .

在对与CMOS工艺兼容的ISFET传感器结构模型分析的基础上，研究了一种测量电路，它具有有利于消除体效应的影响、减少共模噪声的影响、克服温度漂移等优点。

Based on analyzing structures of ISFET sensors compatible with CMOS technology , a kind of measuring circuits is researched . It can reduce body effect , common modle noise , temperature drift and so on .

本文提出了双栅双注入单管动态存储单元结构，该结构器件的工作基于势的变化，利用SOI的浮体效应，通过双注入来提高注入效率和减少读取时间。

Double Gate Cell with Double Injected one-transistor dynamic access structure is proposed . Based on the change of potential , using the floating effect of SOI , it worked on the high injection efficiency and lowly read-out time .