反向恢复时间

采用铂液态源扩散降低少数载流子寿命τ从而缩短反向恢复时间trr；

Spin-on platinum diffusion was used to control lifetime of minority carrier to reduce the reverse recovery time trr .

用铂扩散的方法来减少反向恢复时间trr，这无论从铂的能级理论上分析，还是从寿命理论上分析都有其可行性。

Platinum diffusion has the feasibility to reduce the reverse recovery time trr that can be analyzed by energy band theory of platinum and lifetime theory .

但二极管PN结中存在电容效应，若要正确地用做脉冲开关，就必须了解二极管的反向恢复时间等重要参数。

However , as the capacitance effect of the diode P-N junction , diode parameters such as reverse-recovery time must be studied before the diode can be used correctly as pulse switch .

缩短HER整流二极管反向恢复时间的实验研究

Research on Shortening the trr Time of HER Diode

关于缩短大电流开关二极管反向恢复时间的研究

The Study on How to Abbreviate Diode Reversed Resuming Hours About Large Electric Volume Switch

报告了改变质子注入剂量对二极管反向恢复时间和反向漏电流等参数的影响。

The influence of proton irradiation dose on the performance of the diode is reported .

二极管反向恢复时间的一种测定方法

Mensuration of diode reverse comeback time

然而在关断时，二极管的电流在降至零之前有一个反向恢复时间。

However , at turn-off , the diode current reverse for a reverse recovery time trr before falling to zero .

采用扩铂工艺制造二极管能够有效地减小开关二极管的反向恢复时间，提高其开关速度。

Using the technology of Pt diffusion to produce diodes can shorten the reverse recovery time and increase the velocity of switching .

采用直拉单晶硅片代替成本较高的外延硅片，采取铂扩散的方法引入复合中心，从而控制少子寿命以减少快恢复二极管的反向恢复时间。

Spin-on platinum diffusion was used to introduce recombination center in order to reduce the reverse recovery time TRR of fast recovery diode .

该项目的主要内容是保证其它参数不变的前提下，尽可能的减小反向恢复时间。

The main contents of the project are to decreasing the reverse recovery time of the device under the condition of not changing the other parameters .

阴极是采用理想欧姆接触结构，同时为电子和空穴提供抽取通道，大大降低了反向恢复时间。

Its cathode adopts ideal ohmic contact which can simultaneously allow the transport of holes and electrons across its surface and decrease reverse recovery time significantly .

试验证明，增加扩铂温度，减小扩铂时间可以有效的解决反向恢复时间和漏电流之间的折衷问题。

The results revealed that the tradeoff of reverse recovery time and the leak current can be improved efficiently by increasing the temperature and decreasing time of the platinum diffusion .

在前面对反偏时本征区特性的研究分析的基础之上，进一步解释反向恢复时间与反向恢复软度受限的原因，并且提出了提高其反向恢复时间和软度的方法。

With above study fruits about the reverse recovery characteristics of the intrinsic area , we explain the reasons for limitations of reverse recovery time and reverse recovery softness , and an improvement on reverse recovery time and its softness is presented .

使用硼铝二氧化硅乳胶源研制出反向快恢复整流二极管，其反向恢复时间trr≤5μs，反向耐压＞1000V。介绍了该器件的结构特点及扩散工艺。

Using colloid SiO 2 source with boron and aluminum , the fast reverse recovery diode was made . Its t rr is shorter than 5 μ s and the inverse voltage is higher than 1000 V. The structure features and diffusive techniques are described in the paper .

得到较为理想的反向击穿电压VBR，正向压降VF，反向恢复时间trr三参数之间的折衷。器件性能优良，可靠性高，样品通过150℃／168小时的高温反偏实验。

The excellent selections of breakdown voltage , forward voltage and reverse recovery time were obtained and the reliability of the device was pretty good .

对H桥工作于双极模式时续流二极管的电应力进行了分析，特别是二极管反向恢复特性对电路的影响，并结合工程实践给出了反向恢复时间的测试方法。

In this paper , the electric stress of continuous current diode when H-Bridge works in bipolar mode is analyzed , and the influences of reverse restoring characteristics of diode on the circuit are presented . Based on engineering design , the test method for reverse restoring time is given .