宽带隙半导体

硅碳氮（SiCN）是一种新型的宽带隙半导体材料，光学特性优良，在光电子器件领域具有非常广阔的应用前景。

Silicon carbon nitride ( SiCN ) is a new wide band-gap semiconductor with excellent optical properties . It has bright prospect in the field of optoelectronic devices .

国外军事和宇航应用宽带隙半导体技术的发展

Overview of the Development of Wide Band-Gap Semiconductor Technologies for Military and Aeronautical Applications in Advanced Countries

宽带隙半导体材料SiC研究进展及其应用

Progress in research on wide band - gap semiconductor SiC and its application

ZnO是一种具有纤锌矿晶体结构的直接宽带隙半导体材料。

ZnO is a wide direct-gap semiconductor with a hexagonal crystal structure of wurtzite .

在本论文中，我们主要讨论了宽带隙半导体材料ZnO、SiC薄膜的制备及其物性研究。

In this thesis , we mainly discussed the synthesis and properties of ZnO and SiC .

ZnO薄膜作为一种新型宽带隙半导体材料，有其广泛应用。

As a new type of wide bandgap semiconductor material , ZnO thin film is widely used .

结论如下：1.本征锐钛矿相TiO2为宽带隙半导体材料。

The conclusions are : 1 . Anatase TiO2 without defect is a large band-gap semi-conductive material .

NSRL在宽带隙半导体能带结构的研究进展

Progress on energy band structure studies of wide-band-gap semiconductors in NSRL

作为宽带隙半导体材料，ZnO具有良好的化学稳定性和热稳定性，其优异的发光特性，透明导电特性近年来得到了广泛重视。

Zinc oxide ( ZnO ), as wide band gap semiconductor material , has good thermal and chemical stability , and its excellent luminescence , transparent conductive properties have attracted much attention .

然而由于TiO2是宽带隙半导体，光利用效率和光量子产率较低，使其应用受到了限制。

However , the highly efficient use of TiO2 is sometimes prevented by its wide band gap that caused the utilization ratio of the sunlight and the quantum yield is low .

硫化镉（CdS）是一种受到广泛应用的宽带隙半导体材料，CdS晶体属于Ⅱ-Ⅵ族化合物中的六方晶系，具有六角纤锌矿结构。

CdS is a wide bandgap semiconductor material which is widespread application . CdS crystals belong to the hexagonal system of ⅱ - ⅵ compounds , with the hexagonal structure .

Zn基Ⅱ-Ⅵ族纳米材料是直接宽带隙半导体材料，在电子、光电子特别是发光器件中，得到了广泛应用，成为当今研究热点。

Zn-based group II-VI nanostructure compounds , as a direct wide band gap semiconductor materials , have got more and more attention for their promising application in electronic and optoelectronic , especially the luminescence devices .

综述了中国科技大学国家同步辐射实验室（NSRL）在宽带隙半导体能带结构的研究进展。

In this paper , we report the progress on energy band structure studies of wide-band-gap semiconductors in NSRL .

这种情形对宽带隙半导体材料如TiO2纳米粒子的光催化特性是有利的，表明这类材料的应用空间得到了拓展。

It is advantageous for photocatalytic properties of some wide bandgap semiconductor materials such as titanium dioxide nanoparticles , and indicates that the applied do - main of this kind of material is enlarged .

将贵金属纳米粒子与宽带隙半导体复合，可有效地扩展TiO2的光响应范围，同时，二者之间的异质结还可以起到促进光生电荷分离的作用。

The incorporation of noble-metal nanoparticles with wide band gap semiconductor can efficiently enlarge the visible light response range , meanwhile , the heterojunction between this two could enhance the separation of photogenerated charge carriers .

ZnO是一具有多种优异性能的宽带隙半导体材料，被称为万能材料，在压敏器件、传感器、紫外、蓝绿发光器件等很多方面都极具应用前景。

ZnO , known as the universal materials , a wide band gap semiconductor with a variety of excellent properties , has a great potential applications in semiconductor pressure sensing device , ultraviolet-green-blue luminescent device and many other respects .

碳化硅（SiC）由于其有热导率高、电子的饱和速度大、击穿电压高等优点而成为制作高温、高频、大功率和抗辐射器件的极具潜力的宽带隙半导体材料。

Silicon carbide is an attractive wide band semiconductor material in high-temperature , high-frequency , high-power and radiation resistant applications due to its excellent physical properties such as high breakdown voltage , high thermal conductivity and high saturation electron drift velocity .

正电子对ZnO和GaN宽带隙半导体中缺陷的研究用正电子湮灭技术对MgH2和AlH3键型的探讨

The Study on Defects in ZnO and GaN Wide Band Gap Semiconductors Using Positron Annihilation Techniques The study of the bond type in MgH_2 and A1H_3 by positron annihilation

这些光电转换体系通常采用TiO2、ZnO等宽带隙半导体作为其基本构成材料，但是这些宽带隙材料本身并不具有对占太阳光谱主要区域的可见光的吸收能力。

In general , these photoelectric conversion systems usually use TiO2 , ZnO and other wide bandgap semiconductors as the basic components . However , these wide bandgap semiconductors do not absorb visible light which occupy a large proportion of the solar spectrum .

新一代半导体材料碳化硅（SiC）是制作高温、高频、高功率器件的理想材料，欧姆接触技术是新型半导体材料尤其是宽带隙半导体器件研究的难点和关键技术。

New generation semiconductor material silicon carbide ( SiC ) is the ideal material for fabricating high-temperature , high-frequency , high-power devices . The technique of ohmic contacts is difficulty and key technology of new semiconductor material research , especially wide band gap semiconductor devices .

碳化硅（SiC）半导体材料是自第一代元素半导体材料（Si）和第二代化合物半导体材料（GaAs、GaP、InP等）之后发展起来的第三代宽带隙半导体材料。

Silicon Carbide ( SiC ) is one of the third generation of semiconductor materials following the progress of the first generation of element semiconductors ( such as Si ) and the second generation of compound semiconductors ( such as GaAs , GaP and InP ) .

In2O3是一种重要的n型宽带隙半导体材料，具有较高的可见光透过率和红外反射率，主要应用于光电装置的透明导电薄膜。

In2O3 is a very important n-type wide band gap semiconductor material . It has been widely used as transparent conductive films in photoelectric devices because of its especial properties , such as high visible light transmittance , high infrared reflectivity .

ZnO薄膜是一种直接宽带隙半导体材料，具有多种用途，可广泛的应用于太阳能电池、压电薄膜、光电器件、气敏器件和紫外探测器等方面。

ZnO film , a semiconductor with wide direct band gap , has been actively studied because of its potential applications . It can be used in solar cell , piezoelectric device , photoelectric device , gas sensor and UV detector and the characteristics can be modulated by appropriate doping .

ZnO是一种具有纤锌矿结构的直接宽带隙半导体材料，在室温下激子束缚能高达60meV，是一种非常理想的半导体材料。

ZnO is a direct wide band gap semiconductor with WZ crystal structure . Due to the low growth temperature and high exciton binding energy ( 60meV ) at room temperature , it is an ideal semiconductor material .

硫化锌（ZnS）是一种直接宽带隙半导体材料，在场质发光、非线性光学器件、发光二极管、平板显示、红外探测器、气敏感传感器、激光器等领域应用广泛。

Zinc sulphide ( ZnS ) is also a wide direct band gap semiconductor , it is widely used in the fields of electroluminescence device , nonlinear optical device , LED , flat panel display , infrared detector , gas sensitive detector and laser .

ZnO是一种宽带隙半导体材料，室温下它的禁带宽度为3.37eV，其最大的特点就是具有高达60meV的激子束缚能。

Zinc Oxide ( ZnO ) is a wide band gap semiconductor material , which has a band gap of 3.37 eV at room temperature , its most important characteristic is the high exciton bounding energy of 60 meV .

ZnO是Ⅱ-Ⅵ族宽带隙半导体材料，室温下禁带宽度约为3.37eV，激子束缚能约为60meV，在短波长激光二极管与紫外光探测器等光电器件领域具有非常广阔的应用前景。

ZnO , with a wide bandgap ( 3.37eV ) at room temperature and larger exciton binding energy ( 60meV ), is a II-VI compound semiconductor material , and has wide application prospects in optoelectronic devices such as short-wavelength laser diodes and ultraviolet photodetectors .

由于具有4f电子，稀土材料呈现出独特的光学、电学和磁学性能，得到了广泛的研究和应用。氧化锌和硫化镉作为应用广泛的宽带隙半导体，对其研究一直备受关注。

Rare earth materials have attracted intensive research interest because of their novel electronic , optical , and chemical characteristics resulting from the 4f electrons . ZnO and CdS are important classical semiconductors with wide band gap , which have been widely applied and received intense attention .

与其它宽带隙半导体材料相比，SnO2具有更宽的带隙和更高的激子束缚能（室温下为130meV），并且具有制备温度较低、理化性质稳定等特点；

Compared with other wide band gap semiconductor materials , SnO_2 had more good property such as wider band gap , higher exciton bind energy ( 130meV at room temperature ), lower deposition temperature and more steady physical and chemical property .

立方氮化硼（c-BN）是一种新型的人工合成宽带隙半导体材料，它具有许多优异的机械学、热学、电学和光学特性，有广泛的应用前景。

Cubic boron nitride ( c-BN ), a fascinating material with many promising applications , has raised extensive efforts to synthesize thin films of c-BN and to study the nucleation and growth of c-BN since 1930 because of its desirable mechanical , thermal , electrical , and optical properties .