发射系数

  • 网络emissivity;emission coefficient
发射系数发射系数
  1. 钼、铪上复碳后次级发射系数降为δ(max)(?)0.7;

    The maximum secondary emission coefficient of carbon coated Mo or Hf is about 0.7 ;

  2. 增频激励法能有效提高IC耗散功率;表面漫射法能有效增大元器件的发射系数。

    Moreover , multiple frequency stimulation method can increase consumption of IC obviously and surface diffuse reflection method can improve surface emission coefficient of IC availably .

  3. 第一性原理研究PDP放电单元MgO保护层各种空缺对二次电子发射系数的影响

    First-principles Study on Secondary Electron Emission of MgO Films with Vacancies in Plasma Display Panel Discharge Cells

  4. 从最大二次电子发射系数δm和δm对应的能量Em这2个方面,比较了不同二次电子发射特性下表面充电过程及最终平衡电位的异同。

    The similarities and differences of charging process of the material with different characteristics of secondary electron emission characteristic is compared .

  5. 老炼过程对表面放电型ACPDP显示屏内MgO薄膜二次电子发射系数的影响

    Influence of Aging Process to the Effective Secondary Electron Emission Coefficient of MgO Film in Surface Discharge ACPDP

  6. 给出了简单结构和能量在30&100keV范围内的H1~+,H2~+及H3~+的二次电子发射系数随时间和能量的变化曲线;

    The simple structure of the detector and the dependence of secondary electron emission coefficients for H1 + , H2 + and H3 + in the energy range 30 keV to 100 keV on time and energy are given .

  7. 然后对微通道板的电子倍增特性进行研究分析,通过研究微通道板电子的倍增过程,分析了MCP二次电子发射系数及MCP增益的特性。

    We analysis the secondary electron multiplier for micro-channel plate in the first , and then analyzed and calculated the gain of Micro-channel plate .

  8. 本文描述了把观测到的等离子体辐射强度变换成等离子体发射系数径向分布的Abel变换的一种新的计算方法。

    A new calculation method of Abel transformation is described for transforming observed radiances into the radial distribution of emission coefficients of plasmas .

  9. 但SPS烧结温度高于1600℃,晶粒将急剧长大,二次发射系数也显著下降。

    However , when the temperature is higher than 1 600 ℃, the grain size of the cathode increases quickly with decrease of the secondary emission coefficients of the cathode .

  10. 测试结果表明用SPS烧结方法制备的稀土-钼阴极材料的次级发射系数达到3.84,比常规烧结方法制备的阴极材料的次级发射系数(2.92)大很多。

    The results show that the secondary emission coefficients of the materials sintered by SPS can reach 3.84 more than those of the materials sintered by traditional method ( 2.92 ) .

  11. 同时,本文也计算了各种不同参量(电压、极间距、气压、二次电子发射系数等)条件下的PDP显示单元的真空紫外光的发光效率,分析了紫外光效随着这些参数变化的原因;

    At the same time , this paper also calculated the VUV luminous efficiency beyond different parameters such as voltage 、 distance of the electrode 、 pressure 、 secondary emission etc.

  12. 从七个方向测量了非柱对称弧柱的谱线强度Hβ的分布。再通过Maldonado-Olsen转换求得发射系数场和温度场。

    The intensity distributions of a cylindrically asymmetric arc are measured from seven directions of observation in order to determine the emission coefficients and the temperature fields in terms of Maldonado-Olsen 's transformation .

  13. 本文用FD-125型氡钍分析仪以α-射气闪烁法测定了哈密地区建材氡发射系数,其范围值为0~18.7%。

    The Radon emissive coefficients of building materials in Hami prefecture were determined by α - scintillation method . Their range was 0-18.7 % .

  14. 哈密地区建筑材料氡发射系数测定

    Determination of radon emissive coefficient of building materials in Hami Prefecture

  15. 讨论微通道板玻璃的二次电子发射系数及其影响因素。

    Effect of acid etching on electrical performances of microchannel plate ;

  16. 氧化镁薄膜二次电子发射系数的测试方法

    Methods of measuring the secondary electron emission coefficient in MgO films

  17. 氧化物阴极次级电子发射系数的温度特性

    Effect of Temperature on Secondary Electron Emission Yield of Oxide Cathode

  18. 高二次电子发射系数材料砷化镓的理论设计

    Theoretical design of high secondary electron emission coefficient emitter GaAs

  19. 利用原始Landau-Zener理论计算了电子发射系数。

    The electronic transmission coefficient is calculated using the Landau Zener formalism .

  20. 绝缘体二次电子发射系数测量装置的研制

    Device for measuring secondary electron emission yield of insulator

  21. 测量氧化镁的二次电子发射系数

    The measurement of secondary electron emission coefficient of MgO

  22. 提高砷化镓二次电子发射系数的探讨

    Discussion of the improving secondary electron emission coefficient

  23. 能隙中的缺陷态、杂质态及表面态增加,有利于内次级电子的非弹性跃迁和二次电子发射系数的减小。

    Secondary Electron Energy Analyzer And for the decrease in secondary electron emission coefficient .

  24. 在各种因素的影响下,材料二次电子发射系数可在很大范围内波动。

    Under the influence of various factors , the secondary electron yield fluctuates in a wide range .

  25. 随着入射角度的增加,发射系数先缓慢增加然后迅速降低。

    With the increase of incidence angle , the reflection coefficient increases slowly first and then decreases quickly .

  26. 微通道板的噪声因子与首次碰撞时二次电子发射系数的关系

    Relationship between the noise factor of microchannel plate and the secondary electron emission coefficient during the first collision

  27. 观测到的辐射强度到发射系数的径向分布的变换&Abel变换的一种数值解法

    Transformation of observed radiances into radial distribution of emission coefficients for plasmas & A numerical solution of Abel transformation

  28. 较高能有效真二次电子发射系数与入射能量、能量幂次的关系

    The relations among energy exponent , incident energy and real efficient secondary electron emission coefficient at higher incident electron energy

  29. 金属的有效真二次电子发射系数与高能原电子入射角的关系

    Relation Between the Incident Angle of High Energy Primary Electron of Metal and the Real Efficient Emission Coefficient of Secondary Electron

  30. 研究表明,在微通道极输入端通道内蒸镀适当深度的高二次发射系数的氧化镁材料,能显著地降低噪声因子。

    MgO material coated in microchannel plate input channel with suitable dept high secondary emission coefficient , can reduce obviously noise factor .