发射区

提出了一种激光与微电子机械加工系统（MEMS）相结合刻蚀硅磁敏三极管发射区引线槽的方法。

A new method to etching emitter region groove approach of magnetic sensitive transistor was proposed by combine laser with MEMS technique .

结果表明该电阻与光敏区面积、发射区边长、发射区位置、发射极电流等因素有关。

Results show that the resistance relates to the area of the photo-excited region , the side length of the emitter region , the position of the emitter region , and the emitter current .

在CO2激光十微米发射区四种推迟器的特性分析

Analysis of Characteristic of Four Type Retarders in 10 μ m Emission Wave-Range of CO_2 Laser

微波辐射与X射线韧致辐射的比值与发射区的密度有关。

The ratio of the microwave radiation to the X-ray bremsstrahlung radiation is dependent on the density in the emitting region .

扩展电阻的测试结果显示出注入的P离子基本上集中在集电区的位置，对发射区和基区未造成显著影响。

Measurement results of impurity concentration show that implanted P element distributes mainly in collector region and has no obvious influence to the impurity distribution in emitter and base .

对这些化合物进行了结构表征，通过UV-vis吸收光谱研究了这些链转移剂和光引发剂在高压汞灯主要发射区的吸收特征。

Their UV - vis absorption characteristics were investigated .

拦截TBM发射区的确定方法初探

A Preliminary Discussion on the Method Determining the Launching Zone of Intercepting TBM

在晶闸管的pin二极管模型基础上，提出了薄发射区晶闸管新结构。

This paper presents a new structure of thyristors with a thin emitting region based on the pin diode model for thyristors .

77K下工作的双层多晶硅发射区RCA器件和电路

Double - Polysilicon Emitter RCA Devices and ICs at 77K

具有双n~+发射区的MCT

MCT - With Double n ~ + Emitter

宽带隙材料作发射区的异质结光晶体管（HPT）的研究

Study of the Heterogeneous Phototransistor ( HPT ) with a Wide-gap Emitter

分析了P发射区杂质总量QE对晶闸管通态压降VT的影响，导出了QE与VT的关系式。

The effect of total doping amount QE of emitting region P on on-state voltage drop VT is discussed and the expression for the relationship between QE and VT is derived .

通过分析几种导弹允许发射区火控解算方法，提出将BP网络应用于反辐射导弹允许发射区火控解算，经仿真试验发现可以很好地解决实时性和精确度的问题。

Pass analyze several method of missile launching areas fire control computation , put forward that BP network was used in the fire control computation of the anti radar missile launching area .

室温光致发光（PL）光谱合成的产品在紫外，蓝光和绿光发射区呈现三个PL峰。

Room-temperature photoluminescence ( PL ) spectra of the synthesized products showed three PL peaks in the ultraviolet , blue and green emission regions .

具有双n~+发射区的MCT经颞颌关节镜行关节盘双板区硬化疗法的动物实验研究

MCT-With Double n ~ + Emitter Experimental Research on Arthroscopic Sclerotherapy of Maraca Mulatto 's Temporomandibular Joint

为10.6μm设计的Fresnel菱体实际上可用于整个CO2激光发射区而误差很小。

In fact the designed Fresnel rhombohedron for 10.6 μ m can be used for the whole radiation region of the CO_2 laser and the error is very small .

研制的多晶硅发射区RCA晶体管不仅具有较低的电流增益-温度依赖关系，而且还具有较快的工作速度。

Double-polysilicon RCA transistors , with both less temperature dependence on current gain and higher cut-off frequency , are fabricated .

实验给出了关于柱形等离子体激光介质发射区厚度及软X射线激光发射角的实验数据。实验也给出了软X射线激光强度随泵浦激光功率密度变化的讯息。

We also report the data of the lasing plasma thickness , the divergence angle of the x - ray laser beams , and the dependence of the x - ray laser intensity on pumping laser power densities .

结果显示：对于Ga面向上的材料，极化效应对器件特性影响不大，而发射区组分渐变可以消除导带尖峰，提高电子的注入效率。

The results show that polarization effect has a little affection to the characteristics of Ga-face terminated device , while the graded emitter can eliminate the peak of conduction band and improve the inject efficiency .

高低发射区（HLE）硅太阳电池

The High-Low Emitter ( HLE ) Si Solar Cell

注砷多晶硅发射区Pt-Si肖特基电路的研制

Investigation on Pt-Si Schottky Circuits With Arsenic Implanted Polysilicon Emitter

砷离子注入多晶硅发射区Pt-Si肖特基电路的注硼退火工艺

Annealing Processes for Boron-Implanted Regions in Pt-Si Schottky Circuits with Arsenic Ion Implanted Polysilicon Emitters

无论NPN型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。

Regardless of type NPN or PNP-type tubes , the internal transistor has three areas , namely , the launch area , base , collector area , the three areas form two PN junction .

结合实例模拟了在大注入下具有发射区、基区指数掺杂分布的PET的电流增益和频率特性（fT人和fmax）。

The current gain and frequency response ( fT and fmax ) of PET with exponential doping profile in emitter and base under high-level injection have been simulated by taking the measured data of studied device as the input pa-rameters .

禁带宽度和少子复合寿命是硅晶体管发射区中重要的物理参数。本文描述了一种实现亚100nm基区宽度的晶体管结构。

Energy gap and minority-carrier recombination lifetime are important physical parameters in the emitter of silicon transistor . A structure of a sub-100 nm base width silicon transistor has been described in this paper .

激光刻蚀硅磁敏三极管发射区引线槽的研究

Study on Laser Etching emitter Region-groove Approach of Magnetic-Sensitive Silicon Transistor

晶体管发射区归一化面积的温度谱

Temperature spectrum on normalized area of emission region area for transistors

薄发射区晶闸管结构及特性的研究

On the Structure and Characteristics of Thyristors with a Thin Emitting Region

非晶硅发射区双极晶体管的低温特性

Low Temperature Characteristics of Si Bipolar Transistors With a-Si Emitter

舰舰协同制导下舰空导弹水平发射区研究

Study of Ship-to-Air Missile Horizontal Launch Envelops Guided by Ship-by-ship