采用全内反射荧光显微镜进行了单颗粒成像，对目标物作用下单个颗粒荧光强度的变化进行了统计分析。
Furthermore , single particle imaging was implemented by total internal reflection fluorescence microscopy . Statistical analysis of single particle fluorescence signal change was carried out in the present of target .
全内反射荧光显微镜