后势垒

样品经Air~800℃热退火后势垒高度与未退火相比上升，说明热退火改善了氧化锌薄膜的结晶质量，减少了界面态影响。

Compared with unanneal samples , the samples annealed in Air ~ 800 ℃ have a higher potential . It has show that anneal can improve the quality of the ZnO films , and reduce the effect of interface state .

退火后肖特基势垒高度提高，在减小栅泄漏电流的同时对沟道电子也有耗尽作用，这是饱和电流和阈值电压变化的主要原因。

The elevation of the schottky barrier height after annealing causes the reduction of gate leakage and the more depletion of channel electrons , which also leads to the change of the saturation current and the threshold voltage .

建立了将Ge引入到集电区后异质结势垒效应（HBE）的一维解析物理模型。

A new one-dimensional analytic model of heterojunction barrier effect ( HBE ) in SiGe base HBT with an extended Ge into collector is proposed .

高、低温激活后阴极表面势垒因子分别为3.53和1.36。

Photocathode surface potential barrier factors after high - and low-temperature activation process are 3.53 and 1.36 respectively .

对阴极高、低温激活后的NEA表面势垒参数进行了评估，揭示了高&低温两步激活过程中阴极表面势垒的变化特点。

The parameters of NEA surface potential barrier after high-low temperature two-step activation were evaluated , respectively , and the change regularity of the surface potential barriers was discovered .