价带

关于ZnO的价带结构

On the Valence Band Structure of ZnO

某些冠醚化合物的XPS内壳及其价带谱研究

XPS spectra of the inner shell and the valence band of some crown ethers

异质结价带边不连续△Ev的理论计算

A theoretical calculation of valence - band offsets at Heterojunctions

Si／Ge应变层异质结价带偏移的剪裁与设计

The Tailoring of Valence-Band Offsets at Strained Si / Ge Interfaces

不同晶面与应变状态下Si／Ge应变异质界面的价带能量不连续性

Valence-band offsets at st / ge strained heterointerfaces under different strain conditions

晶格失配对C／BN异质结价带偏移的影响

Effecfs of Lattice Mismatch on Valence-Band Offsets △ E_v in Heterojunction C / BN

使用这种方法和简化的有限差分算出了p型半导体量子阱的价带结构和二维空穴气。

The valence band structure of p-type heterostructure quantum well and two-dimensional hole gas are calculated by this method and the reduced finite difference calculation .

非致冷红外探测用VOx薄膜XPS价带谱研究

XPS Valence Band Spectrum of VO_x Films for Uncooled Infrared Detector

邻硝基乙酰苯胺衍生物的XPS振起伴峰及其价带谱的研究

Studies on XPS Shake-up and Valence Band Spectra of o-Nitro Acetanilide Derivatives

AlN／GaN异质结的价带偏移计算

The Valence - band Offsets of Heterojunction AlN / GaN

XPS和限表征。ZnO薄膜的XPS价带谱研究

XPS Valence Band of ZnO Films

该方法计算量少，计算结果满足价带特性，适用于p型异质结器件的优化设计。

Its amount of computation is less and the computed results satisfy the valence band characteristic so that it is suitable for the optimum design of p-type heterostructure devices .

AlxGa（1－x）As／GaAs价带偏移的理论计算

Theoretical Calculation of Al_xGa_ ( 1-x ) As / GaAs Heterostructures Valence-Band Offsets

用深能级瞬态谱方法研究赝晶Si/Ge（0.25）Si（0.75）/Si单量子阱的价带偏移

Valence band offset in pseudomorphic si / ge_ ( 0.25 ) sio_ ( 0.75/si single quantum well measured by deep level transient spectroscopy

取代环戊二烯钛、锆、铪络合物的XPS及其价带谱研究

XPS and Their Valence Band Spectra Studies of the substituted Titanocene , Zirconocene and Hafnocene Dichloride Complexes

AIN、GaN立方晶体的静态性质和AIN/GaN异质结的价带偏移

The Static Properties of AlN and GaN , and the Valence-band offsets of AlN / GaN Heterojunction

UPS结果表明PS的费米能级到价带顶的距离不同于单晶Si。

UPS results show that the distance between Fermi level and the peak valence band in porous silicon is different from that in crystalline silicon .

用XPS和UPS技术细致地研究了石墨的价带结构，并与Painter等人计算的结果相比较。

The valence-band structure of graphite was investigated by UPS and XPS , and the result was compared with theoretical result of Painter et al .

XPS价带谱研究发现VO2+δ物相的薄膜最利于非致冷红外探测。

At same time , XPS valence band spectrum verifies that VO2 + δ films with the best phase are beneficial to uncooled infrared detections .

应变的GexSi（1-x）层和未应变的硅层间的能带偏移主要是价带偏移。

The band offset between strained Ge_xSi ( 1-x ) and un strained Si is mainly due to the valence band offset Δ E_v .

此外，过渡金属进入ZnO晶格中之后，由于ZnO和金属离子的sp-d轨道杂化耦合作用，使价带上移导带下移，从而使ZnO带隙变窄。

Besides , doping of transition metals into makes the conduction band moving down and valence band up due to sp-d orbital hybridization coupling and then narrows bandgap .

化合物2~5的Eg（带隙）随着导向剂链长（n）的增大而递减，其Eg受Ag-4d/I-5p为主要成分的价带所控制；

Eg ( band gap ) of compound 2 ~ 5 decrease with increase of chain length ( n ) of SDAS , their Eg are controlled by valence band of Ag-4d / I-5p .

讨论了△Ev与界面状况和原子能级变化的相互关系，确定了生长有序的突变Si/GaP（Ⅲ）异质界面的条件，得到此时界面的价带不连续值为0.80eV。

The relation of the Δ Ev values with the status of the interface and the shift of atomic core levels is discussed . The growth condition of the abrupt and ordered Si / GaP (ⅲ) heterointerfaces is determined .

发现与P原子悬挂键有关的本征满表面态在Г点位于价带顶下0.6eV处，而缺陷引入的空表面态位于价带顶上1.1eV处（Г点）。

It is found that the intrinsic occupied surface states related to P atom dangling bonds are located at 0.6 eV below the valence band maximum , while the defect induced empty surface states are located at 1.1 eV above the valence band maximum (Γ point ) .

替位Ag会引入一些定域隙态，同时费米能级钉扎在价带顶，杂质态可以捕获空穴以抑制光生载流子的复合。

Substitutional Ag introduces some localized gap states , while the Fermi level is pinned near the top of valence band , and the impurity states can trap the hole to suppress the recombination of photo-generated carriers .

当N掺杂浓度达到1%时，开始在PzR谱和PR谱中观测到Γ价带的轻重空穴分裂。

The well resolved split between heavy hole and light hole of Γ valence band is shown in PzR when the N doping level is up to 1 % .

通过这些结果我们可以得出，极化诱导的电子阻挡层能够有效的阻挡电子和降低由能带弯曲和价带带阶AEvAlGaN/GaN引起的空穴阻挡，从而诱导主要的复合发光在ZnO中发生。

The result shows that the polarization induced electron blocking layer can effectively block the electron and reduces holes barrier caused by energy-band bending and valance band offset △ EvAlGaN / GaN , leading to enhancement of recombination in ZnO .

采用变角度XPS（X射线光电子谱）技术研究了贫铀的初期氧化过程，获取了金属态贫铀表面U4f和O1s谱峰以及价带的XPS谱。

The angle resolved X-ray photoelectron spectra ( ARXPS ) were used to study the initial oxidation process . In the study , the U_ 4f , O_ 1s and valence band XPS peaks of depleted uranium were obtained .

水溶态纳米TiO2由于吸附而在表面形成了TiOH和TiH2O的表面态，其能级位于其价带以上约0.6和0.54eV；

The surface states , Ti-OH and Ti-H_2O , are formed on the surface of nanometer TiO_2 in aqueous solution because of high absorption ability , whose energy levels are about 0.6 and 0.54 eV above the valence band , respectively .

用XPS测量了Pt/InP肖特基接触界面的芯态谱和价带谱，结合AES测量，提出了在界面形成磷化铂的实验证据。

The spectra of the core level and valence band at Pt / InP Schottky contact inter-face have been measured by XPS , experimental evidence of platinum phosphide for-mation at the interface has been suggested combinding AES measurement .