态密度

分析了其结构、态密度、能带结构及锂离子的吸附能等。

The atomic structures , DOS , band structures and lithium adsorption energies are calculated .

研究结果表明磁光电导谱的峰值和强度强烈依赖于填充因子和态密度。

The peak position and intensity of the magneto-optical conductivity depend strongly on the filling factor and the broadened DOS .

讨论了K空位形成后电荷密度的重新分布、相应的电子态密度和能带结构等性质。

The properties of density of states and band structure on KDP with K vacancy were discussed .

用光生亚稳态方法测定α-Si∶H中带隙态密度分布

Measurement of gap state density distribution in α - si : h from light induced metastable state in the gap

用场效应法研究退火对a-Si∶H隙态密度的影响

Annealing Effects on a-Si : H Density of states in Gap by Field Effect Method

通过形成能和态密度等手段分析了H间隙杂质对碲镉汞材料电学性质的影响。

The electronic property of interstitial hydrogen has been analyzed by the method of formation energy and density of state . 2 .

MOS系统界面态密度分布的一种直接显示法

A Direct Display Method for Measuring MOS Interface State Density Distribution

在U（t，t′）方法框架下局域态密度的计算

Calculation of Local Density of States in the Framework of U ( t , t ′) Methods

应变Si（1－x）Gex层本征载流子浓度和有效态密度的温度特性分析

Temperatures characteristics of intrinsic carrier concentration , effective densities of states in strained si_ ( 1-x ) ge_x layers

用场效应法测量a-Si∶H的定域态密度

Measurements of Density of Localized States in a-Si : H Films Using the Field Effect Method

各向异性和复式结构导致了x偏振和y偏振有不同的带隙结构、透射率和态密度等。

The anisotropy and duplex result in different band gap structures , transmission probabilities and state densities for x polarization and y polarization .

利用M估计的稳健回归方法，选取ψ函数为正态密度型函数，计算震级－频度关系中的b值。

In this paper , using robust regression and choosing a function as normal density type function , we calculate b value in the relation between magnitude and frequency .

用SCLC法研究低k多孔SiO2：F薄膜的隙态密度

Density of defect states in low-k porous SiO_2 : F film researched by SCLC method

态密度分布显示在Cu的d轨道和两个配位基的π轨道间存在强的交换相互作用；

There is a strong exchange interaction between the d type orbitals of the copper atom and the π orbitals of the two ligands .

用场效应方法研究a-Si中定域态密度

Investigation of the Localized States in Amorphous Silicon Films Using the Field Effect

利用分段的多项式拟合了ZnS的实际导带结构，计算了能态密度和散射速率。

The density of state and scattering rates are also calculated from these polynomials .

利用Laplace变换求系统的态密度及具体应用

Using the Laplace Transform , Derive an Expression For The Density Of States Of The System

用光学方法研究掺硼a-Si（1-x）Cx∶H膜的隙态密度

Investigation on the Density of Gap States in a-Si_ ( 1-x ) C_x ∶ H Films Doped With B by the Optical Measurement

模型以氢钝化SiC表面悬挂键，降低SiC表面的界面态密度，消除了费米能级钉扎，获得理想的SiC表面。

The density of surface states is lowered to unpin the Fermi level because the hydrogen passivated dangling bonds of the surface .

态密度的计算表明，液态和非晶态Ni-Al合金的费米能级附近，主要由Ni的d电子和Al的p电子组成。

The Fermi level of the liquid and amorphous Ni-Al alloys mainly consists of the d-electrons of Ni and the p-electrons of Al .

随着原子序数增加，TA与LA的态密度峰高之比递次增大。

The rate of the peak heights for the density of states of TA and LA increases with the atomic number .

主要内容有：吸附能和吸附位置、CO分子吸附前后CO分子键长变化以及吸附前后CO电子态密度及分波态密度。

The main contents contain adsorption energy , adsorption position , change of CO molecular bond length , DOS and PDOS of CO molecular before and after adsorption .

Yb掺杂（Ba，Sr）TiO3系PTCR材料的研究Ⅰ.表面受主态密度的计算

Investigation on Yb-Doped ( Ba , Sr ) TiO_3 PTCR Materials ⅰ . Calculation on Acceptor State Density

电子态密度分析表明，Ni3d电子最活泼，因此在合金中Ni为活性位。

The analysis of electronic density of states showed that the d electrons of Ni atoms are the most active , hence Ni atoms are active sites .

用温度调制空间电荷限制电流法研究GD-a-Sic∶H膜的隙态密度

Measurement of Density Gap State in GD-a-Sic : H Films by Temperature-Modulated-Space-Charge-Limited-Current Method

计算得到的态密度和能带图同时表明，界面结构极大的影响着NiO的电子结构。

The density of states and band structure show that the interface structure affects the electronic structure .

Ti（17）的态密度图表明，由氢而产生的带位于Fcrmi能级下约6.5ev处，光电子发射的结果是定性相符的。

Density of states diagrams for Ti_ ( 17 ) show a hydrogen induced band at approxi-matel 6.5.ev below the Fermi level in agreement with photoemission results .

推广的Fibonacci链的态密度

Density of States of Generalized Fibonacci Chains

通过对Fe原子在不同位置的吸附能，吸附体系与清洁表面的层投影态密度以及电子转移情况进行计算。

Energies of adsorption systems of aFe atom on different sites are calculated , and the layer project density of states ( LPDOS ), the charge transfer are investigated .

态密度和晶体轨道重叠布居反映了晶体中电荷分布状况及化学成键特点，与晶体结构分析、NMR谱学表征结果相符合。

The calculated densities of states and crystal orbital overlap populations show the charge distributions and chemical bonding properties which coincide with the experimental results .