导带

掺杂F后费米能级增大显著，且导带穿过费米面，故掺F后体系导电性提高。

Fermi level was significantly increased after F-doping , and the conduction band crossed the Fermi level , so F-doping could increase the conductivity .

进而分析了由于Ge、Si中导带各极值所产生的谷轨道分裂。

Further more , we analyzed the valley-orbit splitting caused by the existance of several equivalent minima of conduction band in Ge and Si .

在Ag基体上用MOCVD法连续制备YBCO超导带

Continuous preparation of YBCO superconducting tape on Ag substrate by MOCVD

采用PIT方法制备银套带Bi（2223）多芯超导带。

A Ag tube type multicore Bi ( 2223 ) / Ag superconducting tape was manufactured by PIT .

CVD动态沉积法连续制备YBCO超导带

Superconducting YBCO tapes continuously prepared by a dynamic chemical vapor deposition method

动态MOCVD连续制备YBCO／Ag超导带的微观结构

Microstructures Of The YBCO / Ag Superconducting Tapes Continuously Prepared By Dynamic MOCVD

动态MOCVD法在Ag／Ni复合基体上连续制备YBCO超导带

Continuous preparation of YBCO superconducting tape on a ag / ni composited substate by dynamic MOCVD

用一种新的MOCVD反应器连续制备YBCO／Ag超导带

The continuous preparation of ybco / Ag superconducting tapes by a new MOCVD reactor

MOCVD法在金属基体上制备YBCO超导带

Preparation of superconducting YBCO tapes on metal substrates by MOCVD

利用分段的多项式拟合了ZnS的实际导带结构，计算了能态密度和散射速率。

The density of state and scattering rates are also calculated from these polynomials .

Hg（1-x）CdxTe半导体的导带电子有效质量

Effective mass of electrons in conduction band of hg_ ( 1-x ) cd_x te semiconductors

宽禁带半导体金刚石刻蚀在导带边缘的PBG微带线

Wide Bandgap Diamond Semiconductor PBG Microstrip Line Etched on the Conductor Line

采用C-V法测量Si/GaP（Ⅲ）异质结的表观载流子浓度分布n（x），从中导出了异质界面的导带失配值和界面电荷密度。

The conduction band offset and the interface charge density are derived from the apparent carrier concentration distribution obtained by the C-V profiling techniqe .

空原子球对SrS导带结构的影响

Empty Spheres Effect on the Structure of Conduction Band of Alkaline - Earth Sulphide SrS

这是由于随着Mn掺杂浓度的提高，Mn2+发光中心的密度增加，导带光电子与发光中心的碰撞几率增大，寿命降低。

This is due to the factor that the colliding probability of photoelectrons with luminescent centers increases as the concentration of Mn 2 + increasing .

两类超晶格的导带Γ能谷的状态主要由Si层的原来体导带X能谷经布里渊区折叠而组成。

The conduction band states near the Γ valley mainly originate from the X valley of bulk Si conduction band which is formed from Brillouin zone folding in superlattices .

HIC导带缺陷的电学检测与评估

Electrical Test and Evaluation on the Conduction Band Defects of Hybrid Integrated Circuits

快速多层CVD工艺制取高性能Nb3Sn超导带

High performance nb_3sn superconducting tape prepared by high rate and multilayer CVD technique

二是掺氮TiO2存在氧空位，并且氧空位在导带边缘，使能带变窄。

The second is that nitrogen-doped TiO_2 has oxygen vacancy , it is close to the conduction band edge and also results in band-gap reduced .

反应扩散法制备的PbMo6S8超导带的超导特性

The superconducting properties of pbmo_6s_8 tapes prepared by reaction diffusion method

通过控制LTCC多层基板收缩率消除通孔与导带间的开路失效

Elimination of Opens Failure Between Via Holes and Traces in LTCC Multilayer Substrate by Coherent Shrinkage

双导带Anderson晶格的Slave-Boson平均场理论

A slave-boson mean field theory for the two-conduction band lattice Anderson model

当用一个Sb原子替代一个Sn原子之后，费米能级上移到导带中，表现出类金属的能带结构。

When one Sn atom is replaced by one Sb atom , the Fermi level moves into the conduction band and the compound displays metallic band structure .

Ga掺杂的ZnO表面吸附CO前后的电子态密度发生了显著的变化，费米能级进入导带。

Ga-doped ZnO surface occurrence a significant change in the electronic density of states before and after the adsorption of of the CO , and the Fermi level into the conduction band .

结果表明（Ge）1（Si）1是间接带，导带最低点在布里渊区的X点。

The results show that the ( Ge ) _1 ( Si ) _1 superlattice is an indirect semiconductor , and the lowest conduction band state is at point X in the Brillouin zone ;

氧空位在导带下形成的窄带使得掺氮的TiO2在400nm~530nm出现新的吸收区域。

That the new absorption band at 400 nm ~ 530 nm is induced by oxygen vacancies in N-doped TiO2 , which exhibits a narrow band close to the conduction band .

此外，过渡金属进入ZnO晶格中之后，由于ZnO和金属离子的sp-d轨道杂化耦合作用，使价带上移导带下移，从而使ZnO带隙变窄。

Besides , doping of transition metals into makes the conduction band moving down and valence band up due to sp-d orbital hybridization coupling and then narrows bandgap .

同时也发现由于加压使得系统的f能级与费密能级的相对移动和f电子与导带电子杂化的增加对S波超导有利，而对P波超导不利。

Furthermore , we find the effect of f energy levels displacement relative to Fermi energy level and s-f hybridization increase due to applying pressure are of benefit to S-wave superconductors , but not of benefit to P-wave superconductor .

应用Slave-Boson技术和泛函积分方法，处理了双导带Anderson晶格模型。

A two-conduction band lattice Anderson hamiltonian is studied by the Slave-Boson technique and the functional integral method .

讨论了飞秒激光照射下LiF晶体中导带电子数密度的变化规律，并解释了相应的实验结果。

Finally the variety of the density of conduction band electrons in the ablation process is discussed and the experimental result with avalanche mode is interpreted .