半导体锗

半导体锗中60°棱位错的电子结构

Electronic structure of 60 ° edge dislocation in semiconductor material Ge

低温下半导体锗的磁阻测试

Measurement of Magnetic Resistance of Germanium at Low Temperature

1947年贝尔实验室半导体锗晶体管的发现，以及五年后第一个商用晶体管的诞生，最终导致微电子学的蓬勃发展和当代信息时代的到来，最能体现这一点。

The discovery of Ge transistor in Bell library in 1947 , and the naissance of the first commercial transistor after five years , leading to the flourish development of microelectronics and the advent of the contemporary information , can be the greatest embodiment of this .

本文报导了一种用辉光放电质谱仪VG9000在无标准样品的情况下对超纯半导体材料锗中23种痕量杂质元素的直接而快速的定量测定方法。

A procedure for determinating 23 elements in ultra-high purity Ge by Glow Dis-charge Mass Spectrometer ( GDMS ) is reported in this paper .

半导体诸如硅、锗因其具有对光、热、电、磁等外界因素变化十分敏感而独特的电学性质，已成为尖端科学技术中应用最为活跃的先进材料之一。

Semiconductors , such as silicon , germanium , are sensitive to light , heat , electricity and magnetism . Because of this unique electrical properties , they have become the most active advanced materials in the fields of science and technology .

例如，在原子能和半导体工业中所需的高纯气体氩、氦及半导体材料硅和锗等，其纯度都要求在99.99%，有些甚至超过99.9999%。

For example , in the industries of atomic energy and semiconductor , the purity of argon , helium , silicon , and germanium is 99.99 % , some of them even exceeds 99 . 9999 % .