半导体硅

非晶态半导体硅p-n结

The Amorphous Semiconductor Silicon p - n Junction

加工技术包括特种超精密机械加工技术、半导体硅加工方法和LIGA技术。

The processing technology includes super-precision machine processing technology , semiconductor silicon processing method and LIGA technology .

半导体硅在含HF电解液阳极氧化体系中可以形成不同的腐蚀形态。

Silicon , semiconductor material , can form different configurations at anodic bias etching system in the HF electrolyte .

NIM-IC型半导体硅单晶电阻率标准样片与NBS的SRM型标准样片的比较实验

Comparison Experiments Between the NIM and NBS Standard Slices for Single Crystal Silicon Resistivity

选用n-，p-和p+三种半导体硅材料作为衬底，通过电化学腐蚀方法分别形成PS薄膜；

Thin films of porous silicon ( PS ) are formed respectively on three nonsilicon substrates of n - , p - , p + by electrochemical etching .

最后，利用YAG脉冲激光和化学镀的方法在半导体硅表面制备了微型结构图元，实现了金属有选择成膜。

Finally , the micro-pattern on the surface of semi-conductor silicon is made and selective metal film is obtained by making use of the YAG pulse laser and electroless plating .

在半导体硅器件的研究工作中，需要准确地测量和控制SiO2薄膜的厚度。由于干涉原理，SiO2薄膜在白光照射下呈现颜色。

In the research work of silicon devices , it is often needed to measure and control accurately the thicknesses of SiO2 thin films .

半导体硅的Seebeck系数和电阻率测量

Seebeck coefficient and electrical resistivity of silicon

而这些重大变革都是以半导体硅材料的技术突破为基础的，半导体硅材料大都应该制备成硅单晶方可作为IC器件使用。

These major changes are based on the technological breakthrough of semiconductor silicon materials . Only semiconductor silicon material is made of single silicon crystal can it be used in the Integrated Circuit ( IC ) .

超纯氢气（大于6N）是半导体硅外延等工艺必备的工艺气体。

Ultra pure hydrogen ( > 6N ) is a process gas necessary for silicon epitaxy in semiconductor industry .

压强的测量采用半导体硅压阻式压强传感器，通过测量MPT进气管路的静压，结合理论分析计算得到MPT谐振腔的总压。

The measurement of pressure was carried out by using semiconductor silicon piezometer . With the static pressure in inlet of pipeline and theoretic analysis we could get the total pressure of MPT .

使用脉冲三波长Nd：YAG激光实现了室温下半导体硅上化学沉积Ni-Pd-P纳米膜。

Using a Q - switched YAG laser with three frequencies , the chemical deposition of a Ni-Pd - P nano - film on the semiconductor silicon substract is obtained at ambient temperature .

化学在半导体硅材料制造业的作用与展望

Application of Chemistry in Semiconductor Silicon Material Manufacturing and Its Prospects

半导体硅温度传感器的研制

Design and Implementation of Semiconductor Temperature Sensor Based on Silicon Material

用量子力学方法计算半导体硅中某些深能级

Calculation of Some Deep Levels in Semiconductors with the Quantum Mechanical Method

半导体硅中电化学注锂的研究

A study of electrochemical incorporation of Li into semiconductor Si

半导体硅材料制造业的职业危害及防护对策

Occupational Hazard in Semiconductor Silicon Manufacturing and Its Protective Countermeasure

半导体硅上激光诱导选择性电镀铜

Laser Induced Selective Electroplating of Copper on Semiconductor Silicon

描述一个有机胶体掺杂剂的半导体硅的激光辐照掺杂方法；

A method is described for semiconductor Si doping of organic colloidal dopants .

半导体硅材料的发展概况

A Survey of the Development of Semiconducting Silicon Materials

世界半导体硅材料发展现状

Development Trend of Semiconducting Silicon Materials of the World

我国半导体硅材料的发展现状

Development and state of chinese semiconductor Si material

半导体硅材料的电火花加工技术研究

Research on micro - EDM for semiconductor silicon

非晶态半导体硅的球辐模型

Ball and Spoke Model of Amorphous Semiconductor Si

关于半导体硅材料工业的几个经济问题

On Several Economical Problems About Semiconductor Silicon Production

分析了电子工业对半导体硅材料的新要求。

This paper analyzes the new demands of electronic industry for semiconductor Si material .

GB/T4298-1984半导体硅材料中杂质元素的活化分析方法

The activation analysis method for the determination of elemental impurities in semiconductor silicon materials

半导体硅表面化学镀铜

Electroless copper plating on semiconductor silicon

世界半导体硅工业新动向

New Trend of Semiconductor Silicon Industry

离子注入型半导体硅探测器

Passivated ion-implanted planar silicon detector