半导体量子阱结构

所得结果能较好地解释半导体量子阱结构中的共振隧穿现象。

The results obtained can explain the phenomenon of resonant tunneling for the semiconductor quantum well structures .

利用微观运动方程计算了超快红外泵浦光引起的半导体双量子阱结构的子带间极化。

The microscopic equations of motion including many-body effects were derived to study the intersubband polarization in the double quantum well structure induced by an ultrafast pumping infrared light .

其次，发现在半导体量子势阱结构中透射或反射电子束的空间位移可以为正也可以为负，并且给出了电子束位移为负的必要条件。

In addition , the lateral displacement of the transmitted electron beam through a semiconductor quantum well can be negative as well as positive . The necessary condition is obtained for the displacement to be negative .

使用这种方法和简化的有限差分算出了p型半导体量子阱的价带结构和二维空穴气。

The valence band structure of p-type heterostructure quantum well and two-dimensional hole gas are calculated by this method and the reduced finite difference calculation .

半导体非对称阶梯量子阱结构的二阶非线性极化率

The Second-Order Nonlinear Susceptibility in Semiconductor Asymmetric Step Quantum Well Structure

本文讨论了超晶格半导体材料（多层量子阱结构）在光开关和光计算中应用的优越性。

This paper discusses the advantages of superlattice semiconductor materials ( Multiple Quantum Well Structure ) in optical switching and optical computing .