量子线

用MOCVD方法生长的GaAs／GaAsP量子线及其特性

The growth of gaas / gaasp quantum wires by MOCVD

T型量子线的电子结构计算

Calculation for electronic structures of T-shaped quantum wires

V形GaAs/AlGaAs量子线结构的微区光致发光谱研究

The micro-photoluminescence of a single V-groove gaas / algaas quantum wire

新型的Si基量子线光波导及其对发展集成光学的意义

Novel Si-wire optical waveguide and it 's impact on development of integrated optics

水解法制备α&Fe2O3量子线的研究

Preparation of Hematite Quantum Wire by Forced Hydrolysis

低维半导体GaAs圆形和矩型量子线的能带结构

The Energy Band Structure of Round and Rectangle Sectional Quantum Wires in Low Dimensional Semiconductor GaAs

GaAs与AlGaAs构成的量子线中的电子输运特性

Electronic Transport Properties in Quantum Wires Made up of GaAs and AlGaAs

柱形量子线中极化子的电子与LO声子之间相互作用能

Electron-phonon Interaction Energies of Polaron in Cylindrical Quantum Wires

V形槽量子线制备工艺简单，具有优良的界面，因而存在着极大的器件应用潜力，吸引了众多研究者的注意。

Owing to the easy fabrication and clean , sharp interfaces of V-groove quantum wires , there is great potential application in it .

SiO2全封闭的硅量子线列阵

Silicon Quantum Wire Array Embedded in Silicon Dioxide

还讨论了在两种极限下，电场方位和量子线尺寸对Stark效应的影响。

Likewise , we discuss the Stark shift is related to both the electric field and the quantum sizes .

InP（001）衬底上的InAs量子线（英文）

InAs Wires on InP ( 001 )

InAs量子线（QWR）选择性生长在GaAs层的台阶边缘。

InAs QWRs are selectively grown on the step edges formed by GaAs layers .

文章介绍阴极射线发光分析方法的基本原理及其在GaN，SiC，ZnO和量子线等新材料研究中的应用实例。

The fundamental principle of CL analysis and its applications in research of new materials , such as GaN , SiC , ZnO and quantum wires are reviewed .

数值计算结果表明：抛物量子线中强耦合极化子的基态能量Eo随约束强度ω0的增强而增大，而随电场强度F和量子线长Z的增大而单调减小。

Numerical calculation illustrated that the ground state energy increases with the increasing confinement strength , and decreases with increasing of electric field strength and wire length .

耦合量子线&量子点体系中Fano效应的研究

Fano Effects in Transport Through a Coupling Quantum Wire-dot System

在考虑电子与LO声子相互作用和加电场的情况下，计算了抛物量子线中强耦合极化子的基态能量。

The ground state energy of strong-coupling polaron in parabolic quantum wires is calculated for the case where the electron interacted with bulk LO phonon and added electric field .

研究耦合量子线-量子点体系的电子输运过程中的Fano效应，这是贯穿于本论文工作始终的一条主线。

The aim of this paper is to investigate Fano effect in transport through coupled quantum wire-dot systems .

并对CdF2、CsI、ZnS和GaAs晶体进行了数值计算，结果表明：两种情况下抛物量子线中极化子的基态能量E0都随约束强度ω0的增大而增大。

Numerical calculation for crystals CdF_2 ? CsI ? ZnS and GaAs indicated that the ground state energy E_0 will increases with the increasing of confinement strength ω _0 .

分析还发现，对于量子线、量子点等强受限体系，微扰方法得到的结果较LLP变分方法的结果合理。

Analysis also shows that the perturbation method is better in dealing with the polaron problem in the strongly confining systems such as quantum wires and quantum dots .

量子线半径R0越小，峰越尖锐，峰值越强；

The smaller the wire radius R-0 , the sharper the peak will be , and the larger the peak intensity will be ;

论证了当外场频率与量子线横向能级间隔匹配时：1.在辐照区内电子在横向态的布居产生空间上的Rabi振荡；

We conclude that when the frequency of the external field is resonant with the separation of lateral levels of the quantum wire , 1.the occupation probabilities of the two lateral levels yield spacial Rabi oscillation in irradiated area ;

分别采用LLP变分方法和微扰方法研究了圆柱形自由量子线的极化子效应，在计算中考虑了类体纵光学声子模及表面声子模的贡献。

The LLP variational approach and the perturbation method are employed to study the polaron effect in a freestanding quantum wire , both the contribution from the bulk-like longitudinal optical phonon modes as well as the surface optical phonon modes are taken into consideration .

dinger方程，并用含时模式匹配散射矩阵方法研究了直量子线在横向极化（电场垂直于量子线）太赫兹电磁场部分辐照下的电子输运性质，得出电磁辐射对电子纵向运动的阻塞效应。

Using time-dependent mode matched scattering matrix method and the theory of the interaction between a two-level atom and electromagnetic field to solve time-dependent schr dinger equation , we predict the effect that the longitudinal transport of electron is partly blocked by the lateral emitting electromagnetic wave .

本文评述了极低闽值电流（在微安范围内）、较高调制带宽、较窄谱线宽和低的温度灵敏度的半导体量子线（QWR）激光器的优异性能。

In this paper , high performances are reviewed of semiconductor quan - tum wire ( QWR ) lasers with extremely low threshold currents ( in the μ A range ), considerably high modulation bandwidth and narrow spectral linewidth and low temperature sensitivity .

半导体量子线制备方法及研究动态

A review on the methods of preparation of semiconductor quantum wires

量子线与量子点微结构的选择生长制备技术

Fabrication technology of quantum wire and dot microstructure by selective growth

量子线中的电子-电子背向散射与磁化率

The Susceptibility of a Quantum Wire with the Electron Electron Backscattering

阳极氧化对GaAs/AlGaAs量子线荧光的影响

Effect of Anodization on Photoluminescence of GaAs / AlGaAs Quantum Wires

磁场作用下圆柱形量子线中极化子的性质

The Nature of Polaron in Cylindrical Quantum Wire with a Magnetic Field