单电子晶体管

建立了单电子晶体管的器件和电路模型。

The model of the SET devices and circuits has been established .

机电单电子晶体管（EMSET）实现了单电子隧穿和岛区振动间的动态耦合，它既是一种最基本的NEMS器件，又是研究复杂NEMS器件的物理机制的重要单元之一。

Electromechanical single electron transistor ( EMSET ) achieves dynamic coupling between single electron tunneling and the island vibration . It not only belongs to one of most essential devices of NEMS , but also reveals the important physical mechanism in complex devices .

单电子晶体管（SET）及其应用

Single - electro Transistor ( SET ) and Its Application

基于互补型单电子晶体管（SET）逻辑门，提出了SET加法器、移位寄存器和ROM的单元电路。

Based on logic gates of complementary single-electron transistor ( SET ), three units are proposed as follows : full adder , shift register and ROM.

单电子晶体管I-V特性数值分析

A numerical analysis of the I-V property of single electron transistors

基于单电子晶体管（SET）的I＿U特性和CMOS数字电路设计思想，提出了一类互补型SET逻辑门。

Based on the I-U characteristics of single-electron transistor ( SET ) and the concepts of CMOS digital circuits design , a sort of logic gate is proposed .

但是，描述单电子晶体管IV特性的正统理论却是一种唯象理论，对于半导体单电子晶体管往往只能给出定性的结果，不能给出隧道结电阻的微观解释及定量计算方法。

The present phenomenon theory on single electron transistors only gives a qualitative description of the I-V characteristics of the device .

一种单电子晶体管的SPICE模型

A SPICE Model for Single-Electron Transistor

单电子晶体管（SET）作为灵敏静电计的灵敏度受到噪声的限制，其中散粒噪声（shotnoise）是本征噪声，决定着单电子晶体管灵敏度的极限。

A single-electron transistor ( SET ) can be used as a sensitive electrometer whose sensitivity is limi-ted by noise . Shot noise is the intrinsic noise which determines the limit of sensitivity of the SET .

单电子晶体管的I-V特性数学模型及逻辑应用

A Mathematical Model of I-V Characteristics of Single-Electron Transistors and Their Logic Applications

大多数硅基单电子晶体管的制备方法可以很好地与主流的CMOS工艺兼容。

Most of the fabrication methods of silicon single-electron transistors can be perfectly compatible with the Si complementary metal-oxide-semiconductor ( CMOS ) technology .

在研究单电子晶体管（SET）I-V特性的基础上，阐明了一种分区处理法，设计了一个SET积分器电路。

Based on the investigation of the I-V characteristics of single electron transistors ( SET ), an SET integrator is designed , with which a second-order low-pass filter is realized .

与半分析模型相比较，该模型准确地表现了单电子晶体管的I-V特性。

Compared with quasi-analytical SET model , the I-V property of SET can be shown accurately .

主要介绍了单电子晶体管（SET）的结构及基本原理，着重介绍了大气状态下用SPM电场诱导氧化加工的制作原理。

In this paper , the structure and running principle of SET are introduced . Particularly , the fabrication principle based on SPM field-induced oxidation in air is presented .

基于库仑阻塞效应和量子尺寸效应工作的单电子晶体管（SET）由于具有超小器件尺寸、超低功耗、超低工作电流和超高工作频率等特点，受到人们的重视和深入研究。

Single-electron transistor has received extensive attention and intensive research in re-cent years by virtue of its advantages such as ultra-small geometry , ultra-low power dissipation , ultra-low operating voltage and ultra-high operating frequency based on the Coulomb bloc-kade and quantum size effect .

当电子器件的尺寸接近纳米尺度时，量子效应对器件工作的影响变得格外重要，就需要采用具有新机理的晶体管结构，单电子晶体管（SET）就是其中一个典型的结构。

As electronic device dimensions approach nanometer scale , quantum effects become especially and increasingly important for device operation , and the transistor structure with new mechanism needs to be adopted . The single-electron transistor ( SET ) is a typical example of such a structure .

基于主方程法单电子晶体管的Verilog-A行为模型

A Verilog-A Behavioral Model for SET Based on the Master Equation Method

在对单电子晶体管主方程模型及主方程的解法详细的分析的基础上，把单电子晶体管主方程模型和SPICE的ABM功能结合，提出了基于主方程的单电子晶体管SPICE模型。

Basing on the analysis of master equation model of single electron transistors , we combine master equation model of single electron transistors with SPICE'ABM function . A SPICE model of single electron transistors based on the master equation is proposed .

最后运用单电子晶体管的SPICE模型对其进行了I-V特性的模拟，同时对结果进行了分析。对比正统理论的分析结果，可以得出所提出的模型的合理性、科学性，有一定的应用价值。

At last , we simulate the I-V characteristic with the SPICE model for single-electron transistor , and analyzed the simulation result , compare the analysis result of the orthodox theory , can obtain that the model is rationalities and scientific , has certain application value .

基于主方程单电子晶体管模拟新方法

Novel Simulation Method of Single Electron Transistor Based on Master Equation

多岛单电子晶体管的实现及其源漏特性分析

Realization and output characteristics analysis of the multiple islands single-electron transistors

基于单电子晶体管的类双涡卷混沌电路

Double - Scroll - Like Chaotic Circuit Based on Single-Electron Transistors

一种基于单电子晶体管的二阶带通滤波器

The Second Order Band - Pass Filter with Single Electron Transistor

采用单电子晶体管实现的积分器及其性能分析

The Integrator Realized with Single Electron Transistor And Analyzing for Its Performance

电容耦合三结单电子晶体管特性分析

Analysis of Capacitance Coupled Three Junction Single Electron Transistor Characteristics

高增益调节系数硅单电子晶体管的输运特性

Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

单电子晶体管电导振荡及其解释

Conductance Oscillation of the Single Electron Transistor and Its Explanation

硅基单电子晶体管是一种极具潜力的新型量子器件。

Silicon single-electron transistors are a new-style dot device of great potentials .

可重构单电子晶体管逻辑的设计与模拟

Design and Simulation of a Reconfigurable Single-Electron Transistor Logic Gates

基于单电子晶体管的动态全加器电路设计

A Dynamic Full Adder Circuit Based on Single Electron Transistors