集成电路工艺

随着微电子技术和集成电路工艺的飞速发展，器件尺寸不断减小，以电子作为电荷载体、研究器件输运性质的微电子学面临着各种困难，比如器件的量子效应和单位面积发热量激增。

As micro electronic and integrated circuit technique developing rapidly , micro-electronics , which utilizes electrons as charge carriers and studies transport properties of devices , has been encountering a series of difficulties such as quantum effects and sharp increase in energy consumption per unit area of devices .

伴随着集成电路工艺技术的发展，多核技术已成为下一代集成电路设计的趋势。

Along with the development of IC process technology , multiple processors technology has become the trend of next generation IC design .

片上系统（systemOnaChip）设计是集成电路工艺提高的必然结果。

System on a Chip is also a result of IC technology improvement .

n阱CMOS与n型表沟CCD兼容的集成电路工艺

An n-Well CMOS and n-Type Surface-Channel CCD Compatible IC Process

集成电路工艺及器件特性计算机辅助设计系统是微电子CAD系统的重要组成部分。

The IC processing and device characteristic CAD system are very important parts in the microelectronic CAD system .

集成电路工艺监测版PCM（ProcessingControol，Monitor）在双极IC中应用广泛。

The Processing Control Monitor ( PCM ) was widely used in bipolar IC .

CEXTOR&一个适合MOS集成电路工艺的电路提取程序

CEXTOR : A Circuit Extractor for MOS IC Technology Circuit Classical

CCD（电荷藕合器件）是一种在硅集成电路工艺线上制作的图像传感器。

CCD ( charge coupled device ) is a sort of imaging sensor manufactured in silicon integrated circuit .

虽然微型机电系统的制造通常使用基于集成电路工艺的平面制造技术，但由于MEMS器件的三维特性，使它与IC的制造有很大不同。

Although MEMS devices are generally fabricated using the surface micromachining technologies that develop from IC fabrication technologies .

本文介绍并讨论了一种n阱CMOS与n沟SCCD兼容的集成电路工艺。

An n-well CMOS and n-channel SCCD compatible IC process is described in the pa-per .

采用金属有机化学气相淀积外延技术生长外延材料，并在GaAs集成电路工艺线上完成工艺制作。

The device is achieved by metal organic chemical vapor deposition and GaAs integrated circuit processing technology .

集成电路工艺的发展使得将系统集成在一块芯片中实现成为可能，芯片设计进入系统芯片（SoC）时代。

Rapid development of integrated chip techniques has driven the system design into System-on-Chip ( SoC ) age .

然而，利用标准的集成电路工艺实现高Q值的片上可变电容是非常困难的。

However , it is very difficult to realize a high-Q on-chip variable capacitor by standard integrated circuit ( IC ) process .

因此，开展对可适用于电源管理类IC设计的集成电路工艺及其在电源管理IC设计中的应用的研究就显得非常必要。

Therefore , it is meaningful to study and develop the process applicable to the power management IC and its applications in its design .

基于MEMS技术制作的硅脉象传感器的制作工艺与集成电路工艺相兼容，有广泛的应用前景。

The process of silicon pulse sensor based on MEMS technology is compatible with IC process , which has expensive application prospect .

论文首次采用GaAs直接离子注入MESFET集成电路工艺，研制出了GaAs霍尔开关集成电路。

For the first time , an integrated Hall switch based on GaAs MESFET process was fabricated .

近30年来，依靠已经成熟的MOS集成电路工艺，CCD器件及其应用技术得以迅速发展。

In the past thirties years , CCD device and its application technology have been developed rapidly with the developed MOS integrated circuit craft .

功率MOS是在集成电路工艺基础上发展起来的新一代电力电子开关器件。

Power MOS is a novel power electronic switching devices , which is developed on the basis of integrated circuit technology .

随着集成电路工艺的高速发展，单块集成电路上的晶体管数目越来越多，更多地以复杂的片上系统（SoC）形式出现。

With the rapid development of integrated circuit technology , integrated circuits on a single chip contain increasing number of transistors , and appear as more complex system-on-chip ( SoC ) .

由于设计、实现和集成电路工艺无关，所以可以方便地移植到其他系统和PLD芯片中。

The design has no relation with the manufacture techniques of IC , so it can be easily reused in other designs and PLD chips .

超大规模集成电路工艺技术迅猛发展，集成电路已能在单芯片上集成整个系统，从而使VLSI进入SOC设计阶段。

The manufacturing technology of VLSI has being developed rapidly , and a whole system can have been integrated in a chip , the VLSI comes into SOC design stage consequently .

近年来由于半导体微电子技术和大规模集成电路工艺的进步，为各国液晶显示（LCD）技术的发展提供了有利条件，特别是日本在LCD技术和产品的研究与开发方面都遥遥领先。

In recent years , the quick development of semiconductor industries has brought liquid-crystal display ( LCD ) research and production a lot of facilities . Many advances have been made with LCD technologies .

虽然本文讨论的变压器是用硅集成电路工艺制造，这个研究方法也同样适合在诸如GaAs等绝缘或半绝缘衬底上制造的器件。

Although this thesis addresses transformers and baluns fabricated in silicon IC technologies , the results of this study are also applicable to components fabricated on insulating and semi-insulating substrates , such as GaAs .

现有MEMS制造工艺难于同时满足既能加工真三维微结构又能与集成电路工艺兼容的要求，严重阻碍了MEMS产业化的进一步快速发展。先进制造技术之ICMEMS制造技术及其发展趋势（续前）

Currently , the MEMS fabrication technology can 't meet the needs of 3-D structure fabrication and compatibility with IC fabrication simultaneously ; thus the development of MEMS industrialization has been impeded to a certain extent .

本文介绍了一种由砷化镓单片集成电路工艺实现的Q值相对较高的微波有源电感的新型结构，其电路原理图由三个微波场效应晶体管和一个电容组成。

In this paper a new topology of microwave active inductor with relatively higher Q value realised by GaAs MMIC ( Microwave Monolithic Integrated Circuit ) is proposed . Its principle circuit is composed of three MESFETS and one capacitor .

微电子集成电路工艺模拟系统SUPREM及半导体器件特性模拟系统SEDAN是微电子CAD系统中的核心内容，也是我国微电子工业技术环节中的一个薄弱环节。

PC-SUPREM and PC-SEDAN are the core of CAD system of microelectronics , are also the weak link of microelectronic industries in china . Some studies of author are discussed .

集成电路工艺的选择影响到整个芯片组的成本，CMOS是数字逻辑电路的主流工艺技术，BiCMOS仍然是射频系统中应用最多的工艺技术。

Proper process technology of IC can reduce the cost of whole chipset . While CMOS remains the backbone for digital logic , BiCMOS remains the most implemented technology for RF systems .

第一章：从集成电路工艺和设计方法发展的角度出发，对SOC设计的特点、设计流程进行了简述，着重分析了SOC设计面临的挑战。

In Chapter 1 , the characteristics of SOC design and the SOC design flow are firstly introduced from the perspective of the development of IC processes and design methods , with emphasis putting on the challenges for SOC design .

介绍了模拟集成电路工艺的发展过程和现状，讨论了国内的BiCMOS工艺、互补双极工艺（CB）、和SOI双极工艺的最新进展。

An overview of analog IC technology is presented . The latest development of BiCMOS process , complementary bipolar technology and SOI deep trench isolation technology are elaborated , with emphasis on BiCMOS technology .

SUPREM系列集成电路工艺模拟系统是当今国际上用户群最大的集成电路工艺计算机辅助设计系统。

The series of SUPREM process modeling system is one of the IC modeling systems that has the biggest user groups in the world .