多晶硅

引脚B有两个非网格多晶硅材料的引脚图形。

Pin B has two off-grid polysilicon pin shapes .

基于PLC控制的多晶硅锭编号显示器设计

Design of Polysilicon Ingot Number Display Based on PLC Control

利用激光再结晶后的多晶硅膜制备了增强型N沟MOSFET。

Enhancement-mode n-channel MOSFET is fabricated on laser recrystallized polysilicon films .

对多晶硅的绒面进行了反射率和SEM形貌测量。

Reflectance and morphology of the texture are investigated .

CMOS兼容的微机械P/N多晶硅热电堆红外探测器

CMOS Compatible MEMS P / N Polycrystalline Silicon Thermopile IR Detector

在重掺杂P型单晶硅上，用LPCVD法生长多晶硅薄膜，离子注入磷后，形成P＋N结。

Polysilicon film is deposited by LPCVD method on heavily doped P - type silicon .

用Raman光谱研究掺氧多晶硅的微结构

Raman Spectra Studies of the Microstructure of Oxygen-Doped Polysilicon

多晶硅微悬臂梁是MEMS中的一个基本结构，阐述了多晶硅微悬臂梁的断裂失效机理。

The polysilicon micro-cantilever is a basic structure in MEMS .

基于横向多晶硅二极管的CMOS兼容热风速计

CMOS compatible thermal anemometer based on laterally polysilicon diodes

p型金属诱导横向结晶多晶硅TFT直流应力下的退化研究

Degradation of Metal-Induced Laterally Crystallized p-Type Polycrystalline Silicon Thin Film Transistors under DC Bias Stress

原芯片为P阱CMOS3μm工艺，一层铝，一层多晶硅。

The original chip adopt technics of P trap , CMOS , 3 μ m , one layer of aluminium , one layer of polycrystalline silicon .

多晶硅双栅全耗尽SOICMOS器件与电路

Fully-depleted SOI CMOS Devices and Circuits with Dual Poly Gate

用AES和XPS技术研究半绝缘多晶硅薄膜

AES and XPS Studies of Semi-Insulating Polycrystalline Sillcon ( SIPOS ) Films

针对多晶硅生产时对温度的控制要求，比较并获得实际控制效果较好的PID控制方案。

For polysilicon production of temperature control requirements , compare and gain practical control effect and better PID control method .

双多晶硅栅SOIMOS器件的研究

A Study of Double - Polysilicon - Gate SOI MOS Device

a-Si∶H薄膜结构对多晶硅薄膜性能的影响

Influence of the a-Si ∶ H Films in Structure on the Properties of Polycrystalline Silicon Films

铝原子在多晶硅晶粒间界分凝的AES研究

Study of Aluminum Atom Segregation at Grain Boundary of Polycrystalline Silicon by AES

ICP-AES法测定多晶硅中的杂质元素

Determination of impurity elements in polycrystalline silicon by ICP-AES

MOS器件多晶硅栅量子效应的解析模型

An Analytical Model for Polysilicon Quantization in MOS Devices

N+多晶硅栅薄膜全耗尽SOICMOS器件与电路的研究

The Research of Fully-Depleted Thin-Film SOI CMOS Devices and Circuits with N + Poly Gate

多晶硅后热退火引起SiO2栅介质可靠性下降的原因分析及其抑制方法

Gate Oxide Reliability Degradation by Post Poly-Sil icon Annealing and Suppression Method

该芯片采用12μm双层多晶硅双层金属CMOS工艺。

It is fabricated using 1.2 ? μ m double poly double metal ( DPDM ) CMOS technology .

本文对以SF6+Ar为反应气体的反应离子刻蚀（RIE）多晶硅工艺进行了研究。

Reactive ion etching of polysilicon using SF6 + Ar reactive gas is investigated .

氮注入多晶硅栅对超薄SiO2栅介质性能的影响

Effects of Nitrogen Implantation into Gate Electrode on Characteristics of Ultra-Thin Gate Oxide

BF2~+注入多晶硅栅的SIMS分析

SIMS analysis of BF + 2 implanted Si-gate

PFn~+离子注入硅的快速热退火及其在多晶硅太阳电池中的应用

Rapid thermal annealing of pf : implantation silicon and applied to polysilicon solar cells fabrication

采用大功率连续CO2激光熔凝掳粉末，生长得到纯度较高的太阳能多晶硅材料。

The solar energy polycrystalline silicon having higher purity grew through melting and coagulating silicon powder with high power CW CO2 laser .

标准CMOS工艺中的多晶硅的热性能越来越稳定，因此多晶硅微热板受到一定的限制。

The polysilicon micro-hotplate in the standard CMOS process is limited because the thermal property of the polysilicon is increasingly stable .

a-Si∶H薄膜固相晶化法制备多晶硅薄膜氢等离子体加热法晶化a-Si∶H薄膜

Polycrystalline silicon film obtained by solid-phase crystallization of a-Si : H film A study of poly-silicon fims prepared by hydrogen plasma heating

通过倾斜多晶硅p-n结光电器件提高光电转换性能

Enhancement of Photoelectric Conversion by Tilting a Polycrystalline Silicon p-n Junction Device