偏置电压

偏置电压对射频/微波MEMS电容开关寿命的影响

Effects of Bias Voltage on the Lifetime of Radio Frequency / Microwave MEMS Shunt Switches

另外，硅PIN光电二极管要能很好的运行，发挥其性能，需要一个适当大小的偏置电压。

Further more , a suitable bias voltage is indispensable if a silicon PIN photodiodes can be good performance .

CCD的偏置电压电路采用国家半导体公司的LM117T设计；

Bias circuit and adopts LM 117T of the national semiconductor company to be designed .

不同偏置电压下SiGeHBTEarly电压的理论研究

Study on Early Voltage of SiGe HBT at Different Bias

偏置电压和扫描速度是AFM阳极氧化加工Ti纳米氧化线的决定因素。

Biased voltage and scanning speed are the two key factors of AFM anodic oxidation of Ti nano oxidation lines .

文中讨论了用不同偏置电压和电流对得到的STM图像的影响。

Effects by setting different bias voltages and tunneling currents on STM images are discussed .

Bi（12）SiO（20）实时全息的剪切效应和无偏置电压时衍射特性

The Shearing Effect of Bi_ ( 12 ) SiO_ ( 20 ) Real Time Hologram and Its Diffraction Character of Zero Voltage

APD的增益可以由反向偏置电压的幅度来控制。

The gain of the APD can be controlled by the magnitude of the reverse bias voltage .

偏置电压对Si-PIN探测器的性能影响

Effect of the reverse voltage to the Si - PIN detector

实验结果能使得偏置电压固定在Vp／2点（即quad点），眼图的Q值为25.04。

The experimental results could allow bias voltage fixed at Vp / 2 points ( quad points ), eye diagram of the Q value is 25.04 .

而当偏置电压工作在调制器最小传输点或最大传输点附近时，且调制信号足够大时，可以生成UWBDoublet。

UWB doublet can be generated when the modulation signal is large enough and the DC bias is near the minimal or maximum point .

文中系统讨论了APD雪崩增益和入射光功率、APD的工作温度和APD的偏置电压等的关系。

Firstly , the relationship between the M opt and the incidence light power , operational temperature and the bias voltage systematically is analyzed .

目前偏置电压控制系统大多基于模拟信号进行，而本文以近年来被广泛使用的数字信号处理器（DSP）为中心搭建了MZ电光调制器直流偏置电压控制系统。

This paper however developed and built a MZ modulator bias control system with the center of the digital signal processor ( DSP ) which is used widely in recent years .

结合一些实验结果，从两个方面来讨论偏置电压对于由Si-PIN探测器构成的X射线谱仪能量分辨率的影响，以及探测器偏置电压的合理选取原则。

We will discuss the relationship between the reverse voltage and energy resolution of a spectrometer based on Si-PIN detector , and determine some principle of selecting the reverse voltage .

该模块为芯片中各个数字和模拟子系统提供基准电压、偏置电压、工作电压和TFT-LCD的驱动电压。

It supplies reference voltage , bias voltage and operation voltages for digital and analog blocks on the chip , and also provides driving voltages for TFT-LCD panels .

其特征是不要外接偏置电压源，而由一个特殊隔离变换器将输入逻辑信号变换为能快速开通或关断IGBT模块的驱动电力。

Its feature is that the input logical signal is converted to drive power by a special isolated converter , which makes a IGBT module turn on or off quickly , without any other biased voltage sources .

用牛顿迭代法分析可解得输入Ebers-Moll模型的直流偏置电压。

Using Newton iteration analysis solution may get the DC bias voltage of inputting Ebers-Moll Model .

本文首先研究了MOSFET的速度和噪声特性，得出了截止频率和偏置电压的关系，以及各噪声源对总噪声的贡献；

At first , this thesis studied the speed and the noise characteristic of the MOSFET , getting the relationship of fT and bias voltage , and the contribution of each noise source to the total noise .

最后，本文对纳米MOSFET输运及噪声进行了MonteCarlo模拟研究，得到了输运参量、电流噪声与偏置电压、温度及源漏掺杂浓度的关系。

At last , nanoscale MOSFET transport and noise are studied by Monte Carlo simulation and the results show how the transport parameters and noise parameters vary with bias voltage , temperature , and the doping density of source and drain .

实验中发现OEO中凋制器的偏置电压对OEO的注入锁定范围有很大影响。

In the experiment , we found the locking range of OEO was greatly affected by the bias voltage of modulator in the loop .

并且详细介绍了Doherty功率放大器的设计过程，分析了补偿线和辅助功率放大器偏置电压对Doherty功率放大器的性能的影响。

Also the design progress of Doherty power amplifier is described and the offset lines & the bias voltage of peak power amplifier impacted on the performance of Doherty power amplifier are analyzed .

当外加偏置电压为3V时，BST薄膜的漏电流密度为1.5×10-7Acm2.该薄膜可作为制备新型非制冷红外焦平面阵列和先进非制冷红外热像仪的优选材料。

MgO was 1.5 × 10 - 7 A ? cm 2 at an applied voltage of 3V . Such epitaxial Ba 0.65 Sr 0.35 TiO 3 thin films are the excellent materials for preparing uncooled infrared focal plane arrays .

当偏置电压增至5kV时，不仅燃烧过程中有离子电流信号，而且在进、排气冲程中，离子电流信号也异常突出。

During the combustion process single high apex or double apices or three apices of ionic current have been found when the bias voltage increases .

使用MAX038波形发生芯片产生波形，通过修改MAX038相应引脚的参数方便地实现输出波形的频率和占空比及偏置电压参数的调节。

The waveform is generated by MAX038.It is very convenient to adjust the frequency , duty cycle and offset voltage of the waveform by changing parameters of the corresponding pins of the chip .

常用电光调制器（EOM）对窄线宽激光器输出的连续光进行微波调制，产生探测脉冲光，探测脉冲光的消光比取决于由EOM偏置电压确定的工作点。

In order to generate the probe pulse , the electro-optic modulator ( EOM ) is commonly used to modulate the continuous light from the narrow linewidth laser . The SNR of the probe pulse depends on the bias voltage of EOM .

通过热调谐，在13V的偏置电压下，峰值波长从1540.1nm红移到1550.6nm，实现了10.5nm的调谐范围，响应线宽维持在0.6nm，量子效率也保持在22%左右。

Through thermo-tuning , the peak wavelength red shifts from 1 540.1 nm to 1 550.6 nm under a bias voltage of 13 V , a tuning range of 10.5 nm is realized with the linewidth maintaining 0.6 nm and the quantum efficiency of the device keeping around 22 % .

偏置电压极性对力反馈电容式微加速度计特性的影响分析

Effects of Bias Voltage Polarity on Differential Capacitive Accelerometer with Voltage Feedback

在适当的偏置电压下，观察到了双稳特性。

The opticai bistability with an appropriate bias voltage has been observed .

偏置电压对离子电流信号影响的试验研究

Experimental Study of Influence of Bias Voltage on Ionic Current

一种红外焦平面数控偏置电压电路的实现

Implementation of Digital - controlled Bias Voltage Circuit on IRFPA