退火温度

退火温度显著影响到薄膜的织构，当在较低的温度下退火时，薄膜永磁相C轴趋向于垂直膜面，从而薄膜面内矫顽力较低。

The texture of the thin films is influenced by the annealing temperature remarkably .

由此可以得出结论：在其它条件相同时，用逆转录产物做PCR的退火温度低于常规peR，比常规pCR低4oC左右。

So the RT-PCR annealing temperature was about lower 4C than normal PCR .

随退火温度的上升，Co颗粒在长大。

The size of the Co nanoparticles increase with the annealing temperature .

改变退火温度对甲基特异性PCR检验指标有效性的影响

The influence on clinical values by optimizing the annealing-temperature of methylation specific PCR

退火温度对P离子注入TiO2薄膜材料物理与生物学性能的影响

Influence of anneal temperature on the properties of P-implanted TiO_2 biomedical thin film

工作压强和退火温度对SiC薄膜结构的影响

Effect of Pressure and Annealing Temperature on Structure of SiC Thin Films

退火温度对Er/Yb共掺Al2O3薄膜的光致荧光光谱的影响

Influence of annealing temperature on the luminescence of Er / Yb co-doped Al_2O_3 Films

退火温度对ZnO薄膜晶体管电学性能的影响

Effect of Annealing Temperature on Electrical Properties of ZnO-TFT

退火温度对Fe（73.5）Cu1Mo3Si（14.5）B8合金电阻的影响

Effect of Anneal Temperature on Electrical Resistivity of Fe_ ( 73.5 ) Cu_1Si_ ( 14.5 ) B_8 Alloy

两相区退火温度对含钒低硅TRIP钢显微组织和力学性能的影响

Effect of intercritical annealing on Microstructure and mechanical properties of low-silicon TRIP steel sheets with vanadium

在低Co含量时，薄膜磁电阻变化率随着Co含量的增加和退火温度的升高而变大。

At low Co composition , giant magnetoresistance increases as the Co composition and annealing temperature increase .

不同退火温度下ZnO薄膜结构及光学特性的表征

Structure of ZnO Thin Films and Characterization of Optical Properties under Different Annealing Temperatures

当变形量为10%时，Ms点随回复退火温度的增加而显著下降。

When the pre-strain is 10 % , Ms temperature decreases remarkably as increasing the annealing temperature .

退火温度对Tb催化GaN纳米棒的影响

Effect of Annealing Temperature on Tb-Catalyzed GaN Nanorods

只有当退火温度超过一定的阈值时（在本论文实验中为850℃）时才能出现ZnO薄膜的p型反转。

Only when the annealing temperature exceeds a threshold ( 850 ℃ in our work ), p-type ZnO films can be achievable .

当退火温度为600°C时，析出的晶粒大小及数量急剧增大，平均尺寸接近45nm。

When annealed at 600 (° C ), the volume fraction of crystallization phase increases remarkably , and the grain size is near to 45 nm .

沉积和退火温度对多晶ZnO薄膜结构特性的影响

Influence of deposition condition and post-treatment on the structural characteristics of ZnO films prepared by reactive sputtering

空气环境下退火温度对连续SiC自由膜结构与发光特性的影响

Influence of Annealing Temperature on the Structure and Photoluminescence Properties of Continuous Freestanding SiC Films in Air

我们还对引物浓度、退火温度及模板量对PCR扩增结果的影响进行了初步探讨。

The effects of primer concentration , annealing temperature and quantity of template on the result of amplification were discussed .

退火温度对PZT薄膜电容器性能的影响

Effect of Annealing Temperature on the Properties of PZT Thin Film Capacitors

双退火温度多聚酶链反应扩增丙型肝炎病毒NS5基因

Amplification of NS_5 Gene of Hepatitis C Virus by Two Annealing Temperature PCR

同时又对DNA模板浓度，PCR扩增程序中的退火温度及循环次数进行了筛选。

At the same time , the concentration of template DNA , annealing temperature and cycle times of PCR procedure were selected too .

退火温度对PVDF薄膜结构的影响及其性能研究

Study on influence of anneal temperature on PVDF films and their performance

退火温度对SOI材料与器件性能的影响

Effect of Annealing Temperature on SOI Material and Devices Characteristics

退火温度对镶嵌于SiO2膜中的Ge纳米晶结构的影响

Effect of Annealing Temperature on the Structure of Ge Nanocrystals Embedded in SiO_2 Film

退火温度对Sol-gel法制备的BiFeO3薄膜结构及电性能的影响

Influence of Annealing Temperature on Structure and Ferroelectric Properties of BiFeO_3 Thin Films Prepared by Sol-gel Process

探讨了不同退火温度下Fe基非晶合金涂层微结构的演化机制，及其对涂层组织及性能的影响。

Furthermore , the microstructures evolution and the wear performance of the amorphous alloy coatings during annealed at different temperatures was discussed .

XRD结果还说明了退火温度的升高能够提高ITO薄膜的结晶度。

XRD results also illustrate the annealing temperature improve the degree of crystallinity of the ITO film .

随着退火温度的上升，P注入的TiO2薄膜材料电阻降低，与水的接触角在70度左右波动。

With the increasing of anneal temperature , the resistance of P-implanted TiO2 thin films decrease and their water contact angles fluctuate at 70 ?

TEM分析结果表明：当退火温度（300℃）不变时，ITO膜的平均颗粒度随着退火时间的延长而逐渐增大。

TEM analysis indicates that when annealed at 300 ℃, ITO average granularity increases with increasing annealing time .