调制掺杂

调制掺杂采用了平面掺杂结构；

The modulation doping using planar - doped structure ;

高电子迁移率晶体管（HEMT）是基于异质结调制掺杂发展起来的一种高频高速半导体器件。

HEMT is a kind of high speed semiconductor device that bases on the heterojunction modulation doping .

大跨导n型Si/SiGe调制掺杂场效应晶体管

High Transconductance n-Type Si / SiGe Modulation-Doped Field-Effect Transistors

调制掺杂AlxGa（1-x）N/GaN异质结构的微应变

Microstrain in modulation-doped Al_xGa_ ( 1-x ) N / GaN heterostructures

应变Si（StrainSi）调制掺杂NMOSFET量子阱沟道中电子面密度直接影响器件的开关特性。

The electron-sheet-density in the quantum well of Strain-Si modulation-doped NMOSFET ( Metal-Oxide-Silicon Field Effect Transistor ) affects switch performance .

调制掺杂AlxGa（1-x）As/GaAs异质结持久光电导的光谱响应

Spectral Response of Persistent Photoconductivity in Modulation-Doped Al_xGa_ ( 1-x ) As / GaAs Heterostructures

应变Si调制掺杂NMOSFET电子面密度模型

Electron-Sheet-Density Model in Strain-Si Modulation-Doped NMOSFET

AlxGa（1-x）As/GaAs调制掺杂结构的生长研究

A Study on the Growth of Al_xGa_ ( 1-x ) As / GaAs Modulation Doped Structure

调制掺杂对AlGaN/GaNHEMT材料电学性能的影响

Effect of Modulation-Doping on the Electrical Properties of AlGaN / GaN HEMT Materials

GaAs/AlxGa（1-x）As调制掺杂材料的高温退火特性

Characteristics of High Temperature Annealing on Modulation Doped GaAs / Al_xGa_ ( 1-x ) As Heterostructures

有并联电导的调制掺杂N-AlxGa（1-x）As/GaAs异质结

Modulation-Doped N-AI_xGa_ ( 1-x ) As / GaAs Heterojunction with Parallel Conductance

液相外延调制掺杂GaAs-AlxGa（1-x）As异质结特性

Characterization of Liquid Phase Epitaxial Modulation-doped GaAs-AL_xGa_ ( 1-x ) As Heterostructures

对（Al，Ga）As/GaAs调制掺杂场效应晶体管MODFET进行了设计、研制与测试。

The design , fabrication and measurement of modulation doped ( Al , Ga ) As / GaAs field effect transistor MODFET 's are carried out .

调制掺杂同型结对HB-LED工作电压的影响

Effect of the Modulated Doping on the Work Voltage of HB - LED

在低温和强磁场下，通过磁输运测量研究了不同Al组分调制掺杂AlxGa（1-x）N/GaN异质结二维电子气（2DEG）的磁电阻振荡现象。

Magnetotransport properties of two-dimensional electron gases ( 2DEG ) in Al_xGa_ ( 1-x ) N / GaN heterostructures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields .

亚微米栅长调制掺杂场效应管（MODFET）的制造

Fabrication of Submicron Gate Length Modulation Doped Al_xGa_ ( 1-x ) As / GaAs Field Effect Transistors

分析了应变Si和应变SiGe沟道MOSFET器件的结构和工作机理，包括表面沟道、埋沟、调制掺杂和双沟道结构，讨论了制备器件的关键技术&驰豫SiGe虚衬底。

The cardinal structure and principle of different devices are analyzed , including surface-channel , buried-channel , modulated-doping and dual channel strained Si or SiGe MOSFET . The key techniques of relaxed SiGe Virtual Substrate ( VS ) that reduce dislocation density are discussed .

调制掺杂场效应管的电容和伏-安特性

Current - Voltage and Capacitance Characteristics of Modulation-Doped Field Effect Transistors

调制掺杂AlGaAs/InGaAs/GaAs应变量子阱结构的研究

Studies of Modulation Doped AlGaAs / InGaAs / GaAs Strained Quantum Well Structures

调制掺杂压缩应变多量子阱激光器的增益特性和线宽增强因子的理论研究

The Theoretical Analysis of Gain and Linewidth Enhancement Factor of Modulation-Doped Compress Strained Multi-Quantum-Well Lasers

调制掺杂场效应晶体管的直流特性

The DC characteristics analysis of modulation doped ( al , ga ) as / gaas field effect transistor

通过固态源的分子束外延系统生长了调制掺杂AlGaAs/GaAs结构材料和InP/InP外延材料。

The modulation-doped AlGaAs / GaAs structures ( MD-GaAs ) and InP / InP epilayers have been grown by solid-source molecular beam epitaxy ( SSMBE ) system .

利用这种选择腐蚀技术制备了undoped-GaAs/n-GaAs调制掺杂沟道金属-绝缘体-半导体场效应晶体管，获得了很好的器件特性参数，证明了这种腐蚀溶液适合于器件制备中的栅挖槽工艺。

The selective etching solution is applied to the fabrication of undoped-GaAs / n-GaAs modulation-doped channel MISFET . The MISFET exhibits excellent and reliable performance , demonstrating the applicability of this solution to gate recess process .

用垂直入射的中红外光束调制非掺杂SiGeSi量子阱中光致子带间吸收。

Modulation of mid infrared beam by photo induced intersubband absorption in undoped SiGe ? Si quantum wells was investigated at normal incidence .

对不同类型的时间分布函数，我们得到了载流子的存活几率，从中可以分析周期型势阱和调制型掺杂等因素对这种材料的宏观输运性质的影响。

Analysis of the results yields informations on the influences of the periodic potential wells and of the modulated doping on the macroscopic transport properties in this kind of artificial materials .