电压应力

IGBTPWM逆变器供电异步电动机定子绕组中电压应力的分析

Analysis of Voltage Stress in Stator Winding of IGBT PWM Inverter-Fed Induction Motor Systems

研究了适用于PWM变换器的非最小电压应力（NonMinimumVoltageStress，简称NMVS）无源无损缓冲电路。

This paper investigates Non Minimum Voltage Stress ( NMVS ) passive lossless snubber circuits in Pulse Width Modulated ( PWM ) converters .

副边电压应力最小化的LLC谐振型变换器拓扑

Topology of LLC Resonant Converter with Minimized Voltage Stress for Secondary Side

整流二极管实现ZCS，其电压应力仅为输出电压；

The voltage stress on rectifier diodes can be minimized to the output voltage .

拓宽了电路应用范围，降低了开关器件的电压应力，同时也有利于后级DC-DC变换器的设计。

That extends the usage of the circuit , minishes the switch stress and is propitious to the design of the post-regulator DC-DC converter .

电压应力下超薄栅氧化层n-MOSFET的击穿特性

The breakdown characteristics of ultra-thin gate oxide n-MOSFET under voltage stress

VIENNA整流器由于具有开关电压应力小、开关信号少、可靠性高等特征，在高压、大功率场合有广阔应用前景。

VIENNA rectifier with low switch voltage stress , less switch signals , high reliability , has a broad prospect in high-pressure , high-power applications .

在电压应力下，SiO2中形成的缺陷不仅降低了SiO2的势垒高度，而且等效减小了SiO2的厚度（势垒宽度）。

During the stress process , the created traps in the oxide not only debase the height of the SiO_2 barrier , but also diminish the breadth of the barrier .

与最小电压应力（MinimumVoltageStress，简称MVS）的无源无损缓冲电路相比，NMVS无源无损缓冲电路更具有电流应力小，软开关范围更广，效率高等突出优点。

Compared to Minimum Voltage Stress ( MVS ) passive lossless snubber circuits , the NMVS passive lossless snubber circuits have less current stress , wider soft switching range and higher efficiency .

针对采用功率MOSFET作为功率主开关的方案，分析了开关管电压应力过冲的原因并给出了抑制电压应力的措施。

Aiming at the scheme using power MOSFET as power switches , the cause of switch voltage stress overshoot is analysis and some measures are given for voltage stress inhibition .

每个主开关电压应力是输入电压的一半，并且全范围实现ZVS而不用附加任何电路。

ZVS is achieved for each main switch without any auxiliary circuit . Voltage stress of each main switch is a half of input voltage .

该方案通过实时调整矢量合成顺序，使原本不处于自然换相的功率管处于自然换相状态，从而降低了三相CSR功率管的电压应力。

By exchanging the sequence of the vectors composition , the power switches , could operate in natural commutation state , so the voltage-stresses of power switches are reduced greatly .

输入输出共地的Buck三电平变换器开关管的电压应力为输入电压的一半，采用交错控制方式，滤波电感最大可以减小为Buck变换器的滤波电感的1/4。

A Buck three-level ( TL ) converter with its input and output sharing the same ground is proposed . The voltage stress of its switches is the half of the input voltage .

另一个桥臂为两电平桥臂，其开关管电压应力为输入电压，可在很宽的负载范围内实现零电流开关，可以选用IGBT。

The voltage stress of the switches of the two-level leg is the input voltage , and the switches can realize ZCS in a wide load range , so IGBT can be adopted .

有源箝位ZVS直流变换器实现了主开关管和辅助开关管的软开关，减少了开关管上的电压应力和反向恢复相关的损耗。

The DC-DC converters can operate on soft switching in ZVS active clamping , so it can reduce voltage stress on switches and loss related to reverse recovery .

多电平变换器因具有小的输出波形THD值、低的器件电压应力和低的系统EMI等优点而成为高压大功率研究应用的热点，相应的PWM控制方法也成为研究热点。

Multilevel converters have become a research hotspot in high-voltage and high-power applications because of their many advantages , such as their low voltage stress on power switches , low harmonic and EMI output .

无最小电压应力（NMVS）的PWM变换器与有最小电压应力的PWM变换器相比，具有电流应力小、效率高等突出优点。

The PWM converter with non minimum voltage stress ( NMVS ) compared to another with minimum voltage stress has many merits such as smaller current stress and higher efficiency and so on .

直流三电平（Three-level，TL）变换器可以降低开关管的电压应力，减小输出滤波器，非常适合高压输入的应用场合。

The most important advantage of the three-level ( TL ) converter is that the switches sustain only the half of the input voltage with the reduced output filter inductance , so it is very suitable for high voltage applications .

结果表明：相关击穿电荷Qbd除了与氧化层质量有关外，还与电压应力和电流密度以及栅氧化层面积有关。

The results show that charge to breakdown Qbd depends not only on the gate oxide quality but also on the voltage stress , current density and the gate oxide area .

而三电平DC-DC变换器的研究发现，复合式全桥三电平变换器不仅可以降低原边开关管的电压应力，还可以减小输出滤波电感量，适用于宽输入电压范围。

The research on the three-level DC-DC converter reveals that the hybrid full-bridge three-level ( HFB TL ) not only can reduce the voltage stress of the primary switches , but also can decrease the filter inductance , which fits for the wide input voltage range .

根据TDDB线性电场模型，采用不同斜率的斜坡电压应力测试数据预测了正常工作电压下的Si3N4寿命。

According to the results of the ramped voltage-accelerated testing with different ramped rates , the lifetime of silicon nitride capacitor at a normal working voltage was finally predicted based on the TDDB linear field model .

采用恒定电压应力对90nmNMOS器件进行了TDDB击穿的评价实验，深入研究了90nm情况下TDDB的击穿机理，并对器件寿命进行预测和分析。

TDDB evaluation experiments were implemented on the 90 nm NMOS devices under constant voltage stress . The breakdown mechanism of TDDB was studied , and the lifetime of the devices was analyzed and predicted .

针对S4-PFC电路拓扑结构，分析了降低电容电压应力的原理和计算方法，推导了电流连续的条件。

This paper gives out a S4-PFC circuit topology , analyzes the principle of reducing the voltage stress and calculating method , and deduces the circuit continuous working condition .

具有最小电压应力的无源无损软开关的设计方法

Design of Lossless Passive Soft Switching Methods with Minimum Voltage Stress

三点平桥臂的开关管电压应力只有输入电压的一半；

Three-level leg switches sustain only the half of the input voltage ;

一种最小电压应力的无源无损软开关技术研究

Research on a Passive Lossless Snubber with Minimum Voltage Stress

其主开关管的电压应力均为输入电压的一半。

The voltage stress of each main switch is only half of the input voltage .

同时，这种设计对功率管电压应力也有很好的吸收作用。

At the same time , this design absorbs the voltage stress in power switching very well .

在晶体管上加均匀的电压应力直到软击穿发生的过程中监控晶体管的参数。

Important transistor parameters are monitored under homogeneous stress at different temperature until the soft breakdown occurred .

截止角频率等约束条件的选择充分考虑到器件的电流负担和电压应力；

Cutoff frequency , such constraint conditions , are set with device 's current allowance and voltage stress considered .