氧空位

N掺杂是通过增加催化剂表面上的氧空位来提高催化剂的低温活性，但N掺杂量并不是越多越好。

N doping promoted the catalyst activity at low temperature by increasing the oxygen vacancies . However , N doping was not the more the better .

PZT陶瓷中由氧空位与畴壁相互作用引起的内耗

Internal friction due to the interaction between oxygen vacancies and domain boundaries in PZT ceramics

实验中观察到氧空位和OH基团的喇曼峰。

The Raman peaks for oxygen vacancy and OH stretching mode were observed .

具有氧空位缺陷的锐钛矿相TiO2为n型导电，存在钛空位缺陷时为p型导电。

Anatase TiO2 with oxygen vacancy is n-type conduction and with titanium vacancy is p-type conduction .

与此同时，骨架红外（IR）谱中氧空位缺陷带消失。

Meanwhile the oxygen related defect sites disappear in infrared ( IR ) spectrum after high temperature calcination .

结果表明：Sc掺杂的ZnO和有氧空位的ZnO是非磁性的；

Calculations show that both Sc doped ZnO and ZnO with oxygen vacancy are non-magnetic .

Raman光谱研究表明，随氧化剂用量的增加，氧空位的浓度增大。

Raman spectroscopy showed that the density of oxygen vacancy increased with the increase of oxidant consumption .

通过调节ZnO结构中的氧空位多少，可对ZnO的发光特性进行调控。

It is obvious that optical property of the ZnO is tunable by controlling the oxygen vacancy concentration .

锐钛矿高氧空位浓度F′色心吸收光谱的第一性原理研究

Study on the F ′ color center adsorption spectrum of anatase with high concentration of oxygen vacancy using the first principle

热力学研究结果表明，虽然Cl能强烈吸附在CeO：氧空位中，导致该氧空位失活。

The thermodynamics results indicated that Cl atom will strongly adsorbed on oxygen vacancy , lead to its deactivation .

钇掺杂ZrO2中电导与氧空位跃迁的关系

The Relationship between Conductivity and Oxygen Vacancy Transition in Yttrium Doped ZrO

ZrO2氧空位显微结构的高分辨电镜研究

Analyzing the Oxygen Vacancy Microstructure of ZrO_2 by High Resolution Electron Microscope

氧空位对WO3光催化析氧活性影响的研究

Influence of Oxygen Vacancies of WO_3 on Photocatalytic Activity for O_2 Evolution

X射线光电子能谱表明，不同掺杂量样品的Bi4f和Ti2p的结合能未有明显变化，这与B位高价掺杂减少氧空位的特殊机制有关。

The x-ray photoelectron scattering reveals that the binding energies of Bi_ 4f and Ti_ 2p remain unchanged after doping , which relate to the special mechanism of the oxygen vacancy restraint .

在发光性能方面，由于ZnO纳米线在缺氧氛围下生长，氧空位是缺陷存在的主要形式，因此所有样品都有较强的绿光发射。

In photoluminescence property , as ZnO nanowires were synthesized in oxygen-deficient environment , oxygen vacancies which are responsible for green emission are the predominant defects .

蓝光和红光发光分别起源丁β-Ga2O3纳米线中氧空位的电子与镓-氧空位对以及N等杂质的空穴之间的复合。

The blue and red light emissions originate from the recombination of an electron on an oxygen vacancy and a hole on a gallium-oxygen vacancy pair and the nitrogen etc dopants , respectively .

钐对不同氧空位SnO2气敏性能的影响

Effect of Samarium on Gas-Sensing Properties of SnO_2 with Different Numbers of Oxygen Vacancy

二是掺氮TiO2存在氧空位，并且氧空位在导带边缘，使能带变窄。

The second is that nitrogen-doped TiO_2 has oxygen vacancy , it is close to the conduction band edge and also results in band-gap reduced .

利用隧道电流对表面H原子的可控脱附，我们获得并研究了表面孤立的单个氧空位和OH基团这两种TiO2（110）表面最主要的点缺陷结构。

By selectively desorb the H atoms of surface OH groups , we obtained and investigated the isolated O vacancy and OH group on the TiO2 ( 110 ) surface .

在650到900℃范围内，随着退火温度的提高，Ag离子注入ZnO纳米线内被激活的锌空位和氧空位浓度逐渐升高，从而导致样品的可见光发射逐渐增强。

In the range from650to900 ℃, rising annealing temperature can also enhance visible emission of Ag-implanted ZnO nanowires due to the increased concentration of activated Zn and O vacancies .

用氧空位模型能较好地说明Rh/TiO2催化剂的实验结果，而Rh/V2O5催化剂的实验结果适于用钒氧化物覆盖模型解释。

The experimental results of Rh / TiO2 and Rh / V2O5 catalysts can be explained by oxygen vacancy model and complete coverage by vanadium oxide overlayer , respectively .

这些发射峰由sol-gel过程中形成的氧空位缺陷、硅悬键和非桥氧中心等缺陷引起。

The emission peaks of the SiO_2 xerogel is related to the oxygen vacancy defects , the silica suspended bonds and the non-bridge oxygen centers formed in sol-gel progress .

IR、ESR分析指出，该样品中V2O5结构发生严重畸变，引起氧空位浓度增加，并认为是导致良好导电性能之主要原因。

And IR and ESR have proved that it has higher density of oxygen vacancy , which results mainly in its good electrical property .

由于氧空位处于不稳定态，该样品在空气中经过850℃2h热处理后氧化。

Then the ceram-ics were oxidized by annealed in air at 850 ℃ for 2 h due to oxygen vacancy under a unstable state .

XPS和Raman结果说明准核壳结构中ZnO与石墨烯之间存在界面相互作用，并在ZnO中引入了～3%的界面应力，同时产生大量氧空位（Vo）。

Raman and XPS results manifested that there was interaction between graphene and ZnO which introduced ~ 3 % interfacial stress and quantity of oxygen vacancies ( Vo ) .

掺杂Zn2+使TiO2纳米粒子FS信号增强，这主要与表面氧空位和缺陷等量增加有关；

Zn 2 + dopant made the FS intensity of TiO 2 nanoparticle increase , due to the increase in the content of surface oxygen vacancies and defects .

氧空位在导带下形成的窄带使得掺氮的TiO2在400nm~530nm出现新的吸收区域。

That the new absorption band at 400 nm ~ 530 nm is induced by oxygen vacancies in N-doped TiO2 , which exhibits a narrow band close to the conduction band .

通过引入氧空位概念，提出了溅射气氛中的氧含量对薄膜中Ce元素价态影响的理论模型。

The oxygen vacancies concept was introduced into Ce : YIG energy band theory model , to explain the compositions of the sputtering gas was key factor to influence the properties of the films .

Bi-Pb-Sr-Ca-Cu-O体系的氧空位、局域化和超导电性

Oxygen vacancy , localization and superconductivity in bi-pb-sr-ca-cu-o system

结果表明，适量La掺杂能够提高TiO2纳米粒子FS光谱强度，这是因为La掺杂能够使表面氧空位和缺陷的浓度增加；

The results show that La dopant can improve the intensity of FS spectra with an appropriate content , which is attributed to the increase in the content of surface oxygen vacancies and defects .