氧化物半导体

P沟道金属氧化物半导体

P-channel metal oxide semiconductor

氧化镍是具有典型的3d电子结构的氧化物半导体，是一种p型半导体材料，禁带宽度是在3.6～4.0eV之间。

NiO is a p-type semiconductor material with typical 3d electron structure oxide . Its band gap is between 3.6-4.0 eV .

n阱互补金属氧化物半导体工艺

N well cmos process

P型金属氧化物半导体的掺杂量会影响纳米薄膜气敏元件对硫化氢的灵敏度。

The sensitivity of nano thin film gas sensor to hydrogen sulfide could be affected by the doping amount of P-type metal oxides .

金属氧化物半导体SnOx薄膜对NOx气体敏感性能研究

A Research on NO_x Gas Sensitivity of Metal Oxide Semiconductor SnO_x Thin Film

蓝宝石上互补金属氧化物半导体微处理机孔雀石绿-H2O2体系动力学光度法测定微量溴化物

Kinetic-spectrophotometric method for the determination of trace amount of bromide with malachite green-hydrogen peroxide

TiO2&Nb2O5系复合氧化物半导体的氧敏特性

The Oxygen-Sensitive Properties of the TiO_2-Nb_2O_5 System Compound Oxide Semiconductor

用于双极型集成电路的共岛金属氧化物半导体（MOS）电容器

Common Island Metal-Oxide - Semiconductor ( MOS ) Capacitor for Bipolar Integrated Circuit

TiO2基氧化物半导体氧敏传感器的研究开发进展

Development and application of TiO_2 oxygen gas sensor

TiO2基氧化物半导体磁性的实验研究

Experimental Studies on Magnetism of TiO_2-Based Oxide Semiconductor

金属氧化物半导体气敏晶体的Poisson方程解及其应用（Ⅱ）

Solution of Poisson Equation for Metal Oxide Semiconductor Gas Sen - sing Crystals and Its Application (ⅱ)

本文首先给出了SOI上纳米金属氧化物半导体场效应晶体管（NANOMOSFET）的结构，它是一种非传统MOSFET。

The structure of nanoscale metal oxide semiconductor field effect transistor ( NANO MOSFET ) is introduced .

CMOS图像传感器是一种采用CMOS（ComplementaryMetal-oxide-semiconductor，互补金属氧化物半导体）工艺制造的图像传感器。

CMOS image sensor is a manufactured image sensor using CMOS ( Complementary Metal-oxide-semiconductor ) technology .

钙钛矿型氧化物半导体Ln（1-x）SrxCoO3气敏机理的探讨

A Study of the Mechanism of the Gas Sensitivity of the Rare-Earth Perovskite Semi-Conductor Ln_ ( 1-x ) Sr_xCoO_3

对金属氧化物半导体（MOS）器件在低剂量率γ射线辐照条件下的剂量率效应以及温度效应进行了研究。

Effects of irradiation dose rates and irradiation temperature are investigated for MOS device under γ - rays .

ZnO是一种金属氧化物半导体材料，由于物理化学性能稳定等优点而被广泛研究。

As a metal oxide semiconductor sensing material , zinc oxide has been under extensive research due to its high physical and chemical stability .

纳米TiO2具有优异的光学、电学及化学性能，是一种重要的直接带隙、宽禁带氧化物半导体材料。

Nanocrystalline TiO2 is an important oxide semiconductor material with direct and wide bandgap , excellent optical , electrical and chemical properties .

本文提出了一种新型SiC金属氧化物半导体场效应晶体管（MOSFET）结构&SiC肖特基势垒源漏MOSFET。

A novel SiC Schottky Barrier Source / Drain Metal-Oxide-Semiconductor Field-Effect Transistor ( SiC SBSD-MOSFET ) is proposed in this dissertation .

主要讨论NTC多晶氧化物半导体中晶界对电导的影响。

The dependence of grain boundary on conductivity in NTC polycrystalline oxide semiconductor was discussed .

掺杂P型金属氧化物半导体，虽然极大地提高了纳米二氧化锡气敏薄膜对硫化氢的灵敏度，降低了最佳工作温度，但并未改善气敏薄膜的恢复特性。

By doping with P-type metal oxides ; although the gas sensitivity of nano thin oxide thin film was greatly enhanced and the optimal operating temperature was decreased , the recovery characteristics of the gas sensing film were not improved .

研究表明，NTC多晶氧化物半导体的电导是由晶粒中载流子的热激发并穿过晶界势垒形成的，电导同时受晶粒和晶界的控制；

Activated carriers in grain pass though boundary , thus form the conductivity of NTC polycrystalline oxide semiconductor .

声音晶片的全部制程，是完全相容于互补式金属氧化物半导体（cmos）的工业标准制程。

The entire process of building a sound chip is fully compatible with the standard industry process for semiconductor manufacturing , called complementary metal oxide semiconductor , or CMOS .

但p型TCO的相对匮乏严重制约了透明氧化物半导体（TOS）相关器件的开发与应用。

But the comparatively lack of the p-type TCO makes a heavy block in the way of the exploitation and application of TOS appliances .

金属氧化物半导体具有比其它有源层材料更高的场效应迁移率，且在可见光范围内透明，能制成全透明的TFT器件，是透明电子器件的核心组成部分。

Metal oxide semiconductors are transparent in visible spectrum and have high field effect mobility , which make them important for transparent electronics .

同时，还展示了用标准互补金属氧化物半导体（CMOS）技术，实现硅基光子器件和电子器件在同一基片上微纳集成的巨大前景。

The perspective of micro / nano scale monolithic integration of optical devices and electronic devices on a single chip by standard complementary mental oxide semiconductor ( CMOS ) technologies is also presented .

提出了用维数和未耗散系数表示的任意形状的金属氧化物半导体气敏晶体的无量纲化Poisson方程，并利用微扰法对Poisson方程进行了求解。

The dimensionless Poisson equation described by dimension and undissipation coefficient for metal oxide semiconductor gas sensing crystals with an arbitrary shape is presented and solved by using the perturbation method .

本论文所述设计中，基于0.6微米互补型金属氧化物半导体（CMOS）工艺，设计并实现一种10-bit高性能、低功耗的流水线模拟-数字转换器（ADC）。

Proposed in this thesis , base on 0.6 μ m CMOS technology , a 10-bit high performance low power pipelined analog-to-digital converter is designed and implemented .

非晶氧化物半导体（AOS）由于迁移率高，可以在低温下制备等优点而受到研究者的广泛关注。

Amorphous oxide semiconductors ( AOS ) have attracted many researchers ' attention due to its high mobility and low temperature processing .

多晶ZnO薄膜是一种多功能宽带隙氧化物半导体薄膜材料，它可以作为透明导电薄膜、压电薄膜、光电子器件、气敏和湿敏器件而具有广泛的应用前景。

Polycrystalline zinc oxide ( ZnO ) films are one of very useful materials , and are widely used in piezoelectric device , transparent conducting electrodes , photo-electric device and gas sensors because of their excellent characteristics .

TiO2是n型金属氧化物半导体，是一种重要的无机功能材料，可用于制作电介质材料、光催化薄膜、减反射涂层、气敏传感器等。

TiO_2 has been known as an n-type metal oxide semiconductor and an important inorganic function material . It can be used in fabricating medium material , photocatalytic films , reducing reflect coat , gas sensor , etc.