氧化硅

XPS研究发现，随着Si注量增大，退火态样品表面硅含量增多，热氧化硅含量减少。

It showed that Si content was increased and SiO 2 content was decreased with increasing the fluence of Si ions .

氧化铝/氧化硅溶胶对碳纤维表面的处理及应用

Al 2O 3 SiO 2 Sol gel coatings on carbon fibers and Its Applications

不过继续缩小氮氧化硅栅介电层厚度的道路仍然走到了尽头。

But thinning of oxynitride , or sion , gate dielectric is at the end of the road .

多孔氧化硅微流控DNA提取芯片的研制

Porous Silicon Dioxide Microfluidic Chip for DNA Extraction

小角x射线散射法研究甲基改性氧化硅凝胶的双分形结构

Two fractal structures of methyl-modified Silica gels by SAXS

富硅氧化硅和ZnO掺Er薄膜的制备及光学特性

The Preparation and PL Properties of Er-doped SiO_x and ZnO Films

（Si，Er）双注入热氧化硅的光致发光

Photoluminescence from Si and Er Dual-implanted Si-rich Thermal Oxidation SiO_2 / Si Thin Films

离子注入制备掺Er富硅氧化硅材料光致发光

Photoluminescence of Er-doped silicon-rich SiO_2 prepared by ion implantation

Ti（IV）在介孔氧化硅MCM-41中的液相移植

Solution Grafting of Ti ( IV ) inside MCM-41 Materials

建立了X荧光法测定铝土矿中主要成分氧化铁、氧化硅、氧化铝的方法。

The technique which analyses iron oxide , silicon oxide , aluminum oxide from bauxite with fluorescent X-ray spectrometry was established .

等离子体增强CVD氧化硅和氮化硅

Study of plasma-enhanced CVD silicon oxide and silicon nitride

室温下掺Er富硅氧化硅和掺Er富硅氮化硅的光致发光及其退火

Photoluminescence from Er-doped Silicon-rich Silicon Oxide Film and Er-doped Silicon-rich Silicon Nitride Film and Its Annealing Behavior

用XPS法精确测量硅片上超薄氧化硅的厚度

Accurate Measurements of the Oxide Thickness for Ultra-thin SiO_2 on Si by using XPS

常压CVD法制备氮氧化硅薄膜沉积特性的研究

Study of deposition character of Silicon Oxynitride Thin Films Prepared by atmospheric pressure CVD

有序介孔氧化硅薄膜制备及其TiO2组装

Preparation and TiO_2 Assembly of Highly Ordered Mesoporous Silica Films

氧化硅有序介孔材料MCM-41的微波水热合成及用于组装ZnO纳米粒子

Synthesis of MCM-41 Mesoporous Silica by Microwave Irradiation and ZnO Nanoparticles Confined in MCM-41

纳米TiO2纤维的形貌可通过调节介孔氧化硅薄膜的孔径大小来控制。

TiO2 nanofiber morphology can be varied by controlling the pore size of the mesoporous silica film .

磁控溅射淀积掺Er富Si氧化硅膜中Er~（3+）1.54μm光致发光

Room-temperature 1.54 μ m er ~ ( 3 + ) photoluminescence from Er-doped silicon-rich silicon oxide film grown by magnetron sputtering

采用XRD、IR、SEM、N2吸附曲线等测试手段对经540℃热处理后的介孔氧化硅材料的结构进行了表征。

Then the characteristics of silica samples after calcination at540 ℃ were investigated using XRD , IR , SEM , N2 adsorption technique .

双层氧化硅（富硅氧化硅和热氧化硅）栅氧化层MOS场效应晶体管的研制

Fabrication of Silicon & rich SiO_2 and Thermal SiO_2 Dual Dielectric Gate Oxide MOSFET 's

采用多孔氧化硅形成超薄SOI结构的研究

Ultra thin film Silicon on Insulator Structure Fabricated by Using Oxidizing Porous Silicon Technology

GUS在氧化硅中的包埋率为84.3±15.7%。

The GUS encapsulation efficiency was 84.3 ± 15.7 % .

采用常压化学气相沉积方法（atmosphericpressurechemicalvapordeposition，APCVD）制备了氮氧化硅（SiON）薄膜，研究了影响其沉积速率和生长模式的因素。

Silicon oxynitride thin films were prepared by atmospheric pressure Chemical vapor deposition . The factors controlling deposition rate and formation mode were studied .

对背面电子照射ICCD成象器氧化硅层X射线总剂量的测量

Determination of the total x-ray dose in the SiO_2 layer of backside electron irradiated ICCD images

众所周知，介孔氧化硅（MS）具有高比表面，孔结构均一，化学性质稳定和光学透明等特点。

As is well known , mesoporous silica ( MS ) has large surface area , uniform pore structure , chemical stability and optical transparency .

在低k的多孔掺F氧化硅材料当中，存在着两对竞争因素：多孔与机械强度，多孔与电学性质。

There are two pairs of competitive factors in the F doped porous low k silicamaterials : porous and mechanical strength , porous and electrical property .

高选择和自终止多孔氧化硅SOI技术研究

Study of Full Isolation SOI Technology by Highly Selective and Self-Stopping Formation of Porous Oxidized Silicon

氧化硅组装纳米Nafion酸催化合成α-生育酚

Synthesis of α - Tocopherol Using Silica Entrapped Nafion Catalyst

随Ts升高（＞820℃），氧化硅区域成核密度增加很快；

With increasing Ts ( > 820 ℃), the nucleation density on the SiO2 mask area increases rapidly .

STM选择局部氧化硅表面构造纳米结构图形的研究

Nanometer scale Patterning Fabricated by Selecting Local Oxidation of Silicon Surface Using Scanning Tunneling Microscope