氧化锡

制备了二氧化锡／多孔硅／硅（SnO2／PS／Si）异质结构样品，在不同温度下，分别测量样品吸附氢气、液化石油气前后的光生电压谱。

SnO 2 / PS / Si heterojunction structure samples are fabricated . The photovoltage spectra of the samples during prior-and post-adsorption of H 2 or liquified petroleum at different temperature are measured .

报道了用喷雾热分解法在不同温度下制备二氧化锡薄膜，发现其在325℃时已晶化，得到四方相多晶SnO2。

Using spray pyrolysis we prepared SnO 2 thin film successfully on glass deposited at various temperatures . Results show at depositing temperature of 325 ℃ the SnO 2 thin film is crystallized .

CeO2掺杂对二氧化锡电极力学性能的影响

Influence of CeO_2 on mechanical properties of tin oxide electrode

掺Pd二氧化锡薄膜结构表征

The Structural Characterization of Pd-doped SnO_2 Thin Films

sol-gel纳米晶二氧化锡薄膜的制备及表征

Preparation and Characterization of Nanocrystalline SnO_2 Gas Sensitive Thin Film by Sol-gel

Eu离子的掺杂对氧化锡的粒度无明显影响，而发光强度得到提高。

There is no evident change in the particle size by doping Eu , with emission intensity increased .

TGDTA和FTIR测试表明，得到的沉淀前驱物为水合二氧化锡。

TG-DTA and FTIR tests indicate that the precursor is hydride tin oxide .

cm的灰蓝色导电掺锑二氧化锡粉末。

As a result , the resistance rate of the final bice antimony-doped tin dioxide powder was 1.66 Ω· cm .

掺铟氧化锡（ITO）薄膜属于透明导电氧化物薄膜中的一种。

Indium tin oxide ( ITO ) films belong to transparent conductive oxide films .

运用俄歇化学效应和XPS研究了高能离子注入的Sb／Bi元素在氧化锡气敏膜中的存在形式。

The chemical valence of Sb or Bi has been studied by Auger chemical effects and XPS .

对不同基体上采用直流气体放电活化反应蒸发沉积法（DC－GDARE）制备的氧化锡超微粒薄膜的晶相结构进行了分析。

The study on crystal structure of SnO 2 UPF ( Ultrafine particle films ) prepared by DC gas discharge activating reaction deposition technique is reported .

采用共沉淀法在亚微米级TiO2表面包覆ATO（掺锑二氧化锡），制得包覆TiO2导电粉。

The fine conductive powder of sub-micron TiO_2 coated by ATO is synthesized by the co-precipitation method .

以F、Sb掺杂，采用超声雾化喷涂化学气相沉积工艺制备出二氧化锡透明导电膜。

In this project , ultrasonic spray CVD method was employed to deposit SnO2 ∶ F and SnO2 ∶ Sb thin films .

锑掺杂二氧化锡（ATO）导电粉体的研究进展

Research progress of antimony doped tin oxide ( ato ) conductive powder

该电子鼻主要由一组厚膜金属氧化锡气体传感器阵列和RBF神经网络组成。

It mainly consists of a thick tin oxide gas sensor array and radial basis function ( RBF ) neural network .

液相法制备锑掺杂二氧化锡（ATO）材料研究进展

Research progress on preparation of antimony-doped tin dioxide materials by liquid phase method

掺锑二氧化锡（ATO）导电粉体的制备与表征

Preparation and Characterization of Antimony - doped Tin Dioxide

PECVD及溅射／蒸发生长二氧化锡薄膜的成形技术

Patterning Technique of Sno_2 Film Deposited by PECVD and Sputter / Evaporate

二氧化锡薄膜的PECVD制备和特性

Preparation and Character of SnO 2 Thin Films by PECVD

二氧化锡是一种n型半导体，具有耐高温、耐侵蚀、高温导电性优良等特点，因此，几乎可以用于所有玻璃品种的熔制。

Tin dioxide is an n-type semiconductor , and has the performance of enduring high temperature and corrosion resistance , it can be used to melt nearly all kinds of glass .

掺锑二氧化锡薄膜（ATO）的制备及其性质研究

Synthesis and Properties of Sb-doped SnO_2 Thin Film

其中使用最多的气敏材料是二氧化锡（SnO2）。

Tin oxide ( SnO2 ) is widely applied as the gas sensing material .

采用两步溶胶–凝胶法制备出ATO（掺锑氧化锡）-SiO2复合抗静电薄膜。

Antistatic ATO - SiO_2 composite thin film was fabricated successfully by two step sol-gel process .

掺杂物掺有杂质的物质水性纳米掺锑二氧化锡（ATO）浆料的研制

A substance that adulterates . Preparation of waterborne nano-antimony doped tin oxide ( ATO ) slurry

二氧化锡（SnO2）纳米颗粒的水热合成及表征

Hydrothermal Synthesis and Characterization of Tin Dioxide ( SnO_2 ) Nanoparticles of Low Size Dispersity

掺杂P型金属氧化物半导体，虽然极大地提高了纳米二氧化锡气敏薄膜对硫化氢的灵敏度，降低了最佳工作温度，但并未改善气敏薄膜的恢复特性。

By doping with P-type metal oxides ; although the gas sensitivity of nano thin oxide thin film was greatly enhanced and the optimal operating temperature was decreased , the recovery characteristics of the gas sensing film were not improved .

分析了氧化锡（SnO2）材料的气敏机理；

The gas-sensing mechanism of tin oxide ( SnO_2 ) is analyzed in this paper .

用溶胶凝胶法在已镀SiO2膜的钠钙硅玻璃和没有镀SiO2的钠钙硅玻璃基片上镀制了锑掺杂摩尔分数为8.0%的二氧化锡薄膜。

Thin films of 8.0 % in mole antimony-doped tin oxide were deposited on soda-lime glass substrates with and without SiO_2-coated by the solgel method .

介绍了锑掺杂二氧化锡（ATO）的导电机理和该材料湿相制备方法的研究现状。

In this paper , the current status of research on conducting mechanism and fabrication methods of ATO is reviewed .

锑掺杂氧化锡（ATO）是一种新型多功能光电材料，具有良好的导电性、透明性和稳定性，它被广泛应用于光催化和太阳能电池中。

Antimony-doped tin oxide ( ATO ) isa new multi-function optoelectronic materials with good electrical conductivity , transparency and stability .