本征载流子浓度

介绍了硅材料本征载流子浓度ni、禁带宽度Eg、电子和空穴有效质量和及载流子迁移率μ的高温模型和计算结果。

In this paper , the high temperature models and calculation results of silicon materials ' intrinsic carrier concentration m , energy gap Eg , effective mass of electron and hole as well as carrier mobility p are introduced .

低温区硅的禁带宽度和本征载流子浓度与温度的关系

Low temperature model of the bandgap and the intrinsic carrier concentration in silicon

应变Si（1－x）Gex层本征载流子浓度和有效态密度的温度特性分析

Temperatures characteristics of intrinsic carrier concentration , effective densities of states in strained si_ ( 1-x ) ge_x layers

非抛物型能带半导体Hg（1-x）CdxTe的本征载流子浓度

Intrinsic carrier concentration in hg_ ( 1-x ) cd_xte semiconductors with nonparabolic band

迁移率和本征载流子浓度随着Ⅴ/Ⅲ比的增加而增大。

The mobility and residual carrier concentration will increase as the ⅴ / ⅲ ratio increases .

本文提出了低温区高精度的禁带宽度的表达式，获得了低温区本征载流子浓度的简明公式。

A accurate expression for the bandgap and a simple formula for the intrinsic carrier concentration at low temperature are presented .

考虑到禁带变窄效应的作用，本文导出了重掺杂硅中本征载流子浓度与温度和杂质浓度的关系式。

The relation between the intrinsic carrier concentration and the temperature and doping concentration in the heavily doped silicon is obtained , under the consideration of the narrowing effect of the bandgap at the heavy doping level .