束缚激子

讨论了N等电子陷阱的电声子耦合强度及有效束缚激子半径随压力的变化关系。

The pressure behaviors of electron-phonon coupling strength of N isoelectronic trap and effective radius of bound exciton are discussed .

III族氮化物量子点中类氢施主杂质位置对束缚激子结合能的影响

Effects of hydrogenic donor impurity position on the binding energy of a bound exciton in ⅲ - nitrides quantum dots

GaP中（Zn，O）络合中心束缚激子的复合动力学

The Recombination Kinetics of Excitons Bounds in GaP ( Zn , O ) Complexes Centers

低温光致发光谱中，占优势的受主束缚激子发光是薄膜p型导电特征的相应表现。

The predominated luminescence of the acceptor-bound exciton in PL at low temperature was the exhibition of the p-type ZnO thin films .

GaAs（1-x）Px：N束缚激子的压力行为

Pressure behavior of bound excitons in gaas_ ( 1-x ) p_x : n

高密度激发下CdS中束缚激子与激子的散射发光

The luminescence of bound exciton-exciton scattering in highly excited CDs

静压下GaAs（1-x）Px：N（x≤0.88）中N等电子陷阱的束缚激子发光

Photoluminescence of Excitons Bound to N Isoelectronic Traps in GaAs1_xPx : N ( x ≤ 0.88 ) under Hydrostatic pressure

观察到了N陷阱中心元胞势束缚激子Nx的发光光谱及畸变势束缚激子NT的发光峰。

The luminescence peaks of excitons Nx bound to N trap central cell potential and excitons N Γ bound to deformation potential were observed .

ZnSxSe（1-x）单晶的生长和束缚激子谱线的识别

Growth of ZnS_x Se_ ( 1-x ) Single Crystals and Identification of Bound-Exciton Spectra Lines

温度10K时光致发光谱（PL）观察到自由激子、束缚激子发射及它们的声子伴线。

Free exciton and binding exciton emission accompanied by their LO phonons could be observed from the photoluminescence spectrum at 10 K.

实验结果表明由N-Zn跃迁完全转变到N束缚激子复合的x值依赖N，Zn的浓度。利用Campbell局域化模型计算了N-Zn跃迁与N束缚激子复合的几率比。

The experimental results show that the alloy composition x , at which N-Zn transition completely becomes N bound excitonic recombination , depends on the nitrogen and zinc impurity concentration .

给出了N相关的中性受主束缚激子为特征的低温光致发光谱，提出了施主-受主共掺实现ZnO薄膜p型掺杂的机理，所得结果对ZnO薄膜的导电类型控制具有普遍性意义。

Photoluminescence spectrum at 77 K with a characteristic of N related neutral acceptor bound excitons ( A0X ) was given . The mechanism of p-type conductivity realized by donor-acceptor co-doping was proposed , which is useful to the control of conductivity in ZnO films .

掺杂适量Sn不仅提高了纳米TiO2的与带带跃迁相关的SPS响应强度，同时也使与束缚激子相关的SPS响应明显增强。

Sn dopant with appropriate content not only enhanced greatly the intensity of SPS responses related to the band-band transitions of TiO2 , but also made the intensity of SPS responses related to the bound excitons increase markedly .

GaP1-xNx混晶的PL谱从低组分的NN对束缚激子及其声子伴线到高组分杂质带发光的特征，表现出明显的带隙降低的趋势。

The GaP_ ( 1-x ) N_x alloys display obvious band-gap reduction characteristic , with the PL spectra developing from nitrogen bound excitons and their phonon replicas under low x composition to impurity band emission under high x composition .

Ⅲ-Ⅴ族化合物中氮束缚激子发光的动力学研究

Luminescence kinetics of nitrogen trapped excitons in ⅲ - ⅴ compounds

电场作用下高分子中自陷束缚激子的极化

Polarization of self trapped exciton in polymers under the electric field

量子阱中中性施主束缚激子的性质

Properties of Excitons Bound to Neutral Donors in Quantum Wells Neuter Times

GaP：N束缚激子发光动力学的研究

A Study of Recombination Kinetics of Bound Excitons in Cap : N

半导体束缚激子基态能的变尺度法

The variable metric algorithm for ground state energy of ionized-donor-bound excitons in semiconductors

GaP：N晶体中束缚激子的辐射跃迁及其能量转移

Radiative transition and energy transfer of bound exciton in gap : n crystals

氮化镓外延单晶中束缚激子辐射复合的偏振特性

The polarization properties of the recombination emission of bound excitons in epitaxial GaN crystal

量子点限制对束缚激子基态能和结合能的影响

Quantum Dot Confinement Effect on the Ground State Energy and Binding Energy of a Bound Exciton

讨论了氯化铯型离子晶体束缚激子的结合能、极化波振子强度、零色散波长和微观参数之间的关系。

The relationship between the micro-parameters and the binding energy of the exciton , the polarization wave oscillator strengths or the zero dispersion wavelength is discussed separately .

GaAs/AlGaAs异质结的界面束缚二维激子效应

Two dimensional exciton effects in carrier confinement at gaas / algaas interface

讨论了量子阱限制效应、激子的束缚能以及激子峰的形成，分析了量子阱的光电特性及量子阱表面光电压的形成和特点。

In this paper , quantum well effect , exciton binding energy and the formation of excitonic peak are discussed .