杂质补偿

本方法已成功地用于杂质补偿度的测量。

This contacting technigue is successfully applied to the measurement of impurity compensation .

本方法已成功地用于高阻硅材料杂质补偿度和载流子迁移率的测量。

This method has been successfully applied to the measurements of impurity compensation and carrier mobility on high resistivity silicon materials .

弱场磁阻法测定P型硅杂质补偿

Impurity Compensation and the Weak Field Magnetoresistance of p type Silicon

检测高阳硅单晶材料的杂质补偿度和迁移率时，必须要有良好的欧姆接触。

Good quality ohmic contact is necessary in the measurements of impurity compensation and mobility on high resistivity silicon single crystal materils .

结果表明：这种补偿硅具有热敏特性，该材料的B值为6300K左右，其阻值对温度的依赖关系与杂质的补偿程度有关。

It is shown that the compensated silicon material has thermally sensitive characteristics . The B-constant of the material is about 6300K and the resistance-temperature relationship of the material depends on the compensation degree of impurities .

采用双光源双探测器光路对其它气体、粉尘等杂质实现补偿；

Double lamp-houses and double detectors was adopted to compensate the influence of impure gases and dusts .

实验结果表明：脉冲激光辐照之后补偿杂质浓度增加，补偿杂质磷分布发生变化，杂质补偿度大于7%的样品在被激光辐照的区域较容易转变为n型导电。

Experimental results show that p-type silicon crystals with phosphorus impurity compensation higher than 7 % are susceptible to inversion by pulsed laser irradiation when the amount of impurity compensation increases and the distribution of impurity compensation changes .

在GaAs低场电子迁移率解析模型的基础上得到了纤锌矿GaN低场电子迁移率的解析模型，该模型考虑了杂质浓度、温度和杂质补偿率对低场电子迁移率的影响。

Based on the analytic low field electron mobility model of GaAs , a new analytic low field electron mobility model of wurtzite GaN is presented . The new model accounts for the dependencies of dopant concentration , temperature , and impurity compensation ratio on low field electron mobility .

分析结果表明，控制杂质能级和表观杂质激活能由补偿度和杂质浓度决定。

The analysis results show the determinative level and experimental value of ionization energy are determined from doped concentration and compensation level .