面发射激光器

垂直腔面发射激光器在无线激光通信中的应用研究

Research on the application of VCSEL in Wireless Laser Communication

垂直腔面发射激光器与多模光纤的直接耦合

Direct Coupling between VCSEL and Multimode Fiber

n型DBR中电势对垂直腔面发射激光器阈值的影响

Influence of the potential in n-type DBR on threshold in vertical-cavity surface-emitting lasers

高铝AlxGa（1-x）As氧化层对垂直腔面发射激光器的影响

Effect of High Aluminum AlGaAs Oxidized Layers on Vertical-Cavity Surface-Emitting Lasers

室温连续工作的GaAs／AlGaAs垂直腔面发射激光器列阵

Room Temperature CW GaAs / AlGaAs Vertical-Cavity Surface-emitting Semiconductor Lasers 2-D Arrays

垂直腔面发射激光器（VerticalCavitySurfaceEmittingLasers，简称VCSEL）以其优异的性能有望成为信息时代的新光源。

Vertical-cavity surface-emitting lasers have the potential to become the new light source in information age for their excellent performance .

GaAs／GaAlAs低阈值垂直腔面发射激光器

GaAs / GaAlAs Vertical Cavity Surface Emitting Lasers with Low Threshold Current

垂直腔面发射激光器DBR结构参数的优化设计

Optimal design for the structure parameters of DBR in vertical-cavity surface-emitting lasers

由选择腐蚀和选择氧化法相结合研制的GaAs／AlGaAs垂直腔面发射激光器

Room Temperature CW GaAs / AlGaAs Vertical Cavity Surface Emitting Semiconductor Laser Fabricated by Selective Oxidation and Selective Etching

高功率InGaAs量子阱垂直腔面发射激光器的研制

High-power InGaAs Quantum Wells Vertical-cavity Surface-emitting Laser

报道了分布布拉格反射镜（DBR）中具有渐变层的垂直腔面发射激光器的研究结果。

A novel vertical-cavity surface-emitting laser with grading DBR is reported in this paper .

垂直腔面发射激光器（VCSEL）在自由空间通信中的应用研究

Application of Vertical Cavity Surface Emitting Lasers ( VCSEL ) in Free Space Communication

垂直腔面发射激光器在甚短距离（VSR）并行光传输系统中的应用

The Application of Vertical-cavity surface-emitting Laser in Very Short Reach parallel optical transmission system

设计了一种新结构垂直腔面发射激光器（VCSEL），即采用环形分布孔结构取代以往的环形沟槽结构。

A new structure design for VCSEL is reported using perforated ring instead of ring trench .

外延膜层厚度的精确性对垂直腔面发射激光器（VCSEL）是十分重要的。

For a vertical-cavity surface-emitting laser ( VCSEL ), the epilayer thickness accuracy is very important .

在室温下测量了GaInP/AlGaInP垂直腔面发射激光器（VCSEL）的光致发光谱和反射谱。

Photoluminescence and reflectance of GaInP / AlGaInP vertical-cavity surface-emitting laser ( VCSEL ) structure are investigated at room temperature .

文章对隧道再生两个有源区内腔接触式垂直腔面发射激光器（VCSEL）光学特进行了研究。

The optical characteristics of tunnel-junction-regenerated multiple active regions intracavity-contacted Vertical Cavity Surface Emitting Laser ( VCSEL ) have been investigated .

文中讨论了用分布反馈（DFB）激光二极管、垂直腔面发射激光器（VCSEL）以及其他单频器件作为光源的激光气体传感实验方法和相关结果。

Results of laser diode-based gas sensing using DFBs , VCSELs and other novel single frequency devices as light sources are described .

本文介绍了以GaAs和AlGaAs作为工作物质的垂直腔面发射激光器的结构、特性和在条形码扫描中的应用。

This article introduces the structure and features of Vertical Cavity Surface Emitting Laser whose running mass is GaAs and AlGaAs and its application in bar code scan .

分析结果表明，采用ITO薄膜作垂直腔面发射激光器的透明导电窗口，在一定程度上提高了器件的输出功率。

Analysis showed that ITO film can improve the output power of the device to a certain extent when it as a transparent conductive window of vertical cavity surface emitting laser .

概述了近年来发展迅速的以垂直腔面发射激光器（VCSEL）作为发光器件的发射模块的结构，以及半导体激光器的特性。

This paper summarizes the structure of optical transmitter module based on VCSEL which has been developing rapidly and the characteristic of semiconductor laser .

通过对垂直腔面发射激光器（VCSEL）台面结构的深入研究，提出了新型环形分布孔结构，并制作了这种新结构器件。

A new mesa structure with ring-distributed perforations was presented , and vertical-cavity surface emitting laser ( VCSEL ) with such structure was fabricated .

并着重论述了该技术在光电器件特别是垂直腔面发射激光器（VCSEL）器件结构制作中的应用。

Especially , The application in the structure fabrication of optoelectronic devices , such as vertical cavity surface emitting laser ( VCSEL ) is discussed .

在大功率垂直腔面发射激光器（VCSEL）出光窗口镀制了HfO2增透膜，其透过率达到99.9%。

HfO_2 antireflection coatings with a transmissivity of 99.9 % has been fabricated on bottom emitting VCSEL .

采用张弛法数值求解静电势的泊松方程，得出垂直腔面发射激光器（VCSEL）中N型和P型分布布拉格反射体（DBR）中一个周期单元的精确能带图。

Poisson equation of the electrostatic potential has been solved by relaxation method to obtain the accurate band diagrams of a periodic pair of N-and P-type distributed Bragg reflectors ( DBR ) in vertical-cavity surface-emitting lasers ( VCSEL ) .

随着垂直腔半导体面发射激光器（VCSEL）技术以及其制造工艺的日益成熟，垂直腔半导体光放大器（VCSOA）也受到了人们的广泛关注。

With the development of VCSEL technologies , vertical-cavity semiconductor optical amplifiers ( VCSOAs ) have become to attract people 's increasing interest .

结果表明，相同周期数情况下线性渐变DBR相对于其他两种结构粗糙度最小，具有良好的表面形貌，可以应用于垂直腔面发射激光器的研制。

It is shown that the interface linear graded DBR has the minimum roughness and better surface morphology , which can be used in the fabrication of vertical cavity surface emitting lasers .

980nm高功率垂直腔面发射激光器

980 nm High Power Vertical Cavity Surface Emitting Laser

采用一种新工艺制作了垂直腔面发射激光器（VCSEL），即用开环分布孔取代以往的环形沟道作为氧化物限制技术的注入窗口。

A new process method , using open annulus distributed holes in place of ring trench as the lateral oxidation windows , is reported to fabricate vertical-cavity surface emitting laser ( VCSEL ) .

利用传输矩阵法得到了垂直腔面发射激光器（VCSELs）内部光场应满足的本征方程，并通过打靶法对方程进行了求解。

The transfer matrix method is used to obtain the intrinsic equation of the optical field within the vertical cavity surface emitting lasers ( VCSELs ), which is solved by the shooting method .