反型层

在P型样品中，反型层量子化效应强烈地影响少子暗电流的大小。

The inversion layer quantization effect strongly modulates the value of dark current in P-type Hg_ ( 1-x ) Cd_xTe .

MIS反型层太阳电池栅电极间距的研究

Research on the space of grid electrode of MIS inversion layer solar cells

应变硅pMOS反型层中空穴迁移率k·p及蒙特卡罗模拟研究

K · p and Monte Carlo Studies of Hole Mobility in Strained-Si pMOS Inversion Layers

低温强磁场下SiMOS反型层输运特性的研究

Transport properties of Si MOS inversion layers in high magnetic fields at low temperature

MOS反型层量子化效应的解析计算

Analytical Calculation of Quantum Effect in MOS Inversion Layer

MOS反型层中迁移率的测试技术

Measurement Method on Mobility in the MOS Inversion Layers

薄膜SOI结构中反型层厚度与薄膜厚度的关系

Dependence of Inversion Layer Thickness on Film Thickness in Thin-Film SOI Structures

6H-SiC反型层电子迁移率的MonteCarlo模拟

Monte Carlo Study of Electron Transport in Inversion Layer of 6H-SiC MOS Structure

提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型.介绍了国内外对高K栅极介质的研究现状。

The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed .

适用于宽温度范围和不同沟遭掺杂浓度的MOSFET反型层载流子迁移率模型

A Carrier Mobility Model for Wide Temperature Range and Different Channel Doping in MOSFET Inversion Layer

硅反型层中的Anderson转变

Anderson transition in silicon inversion layers

施主能级分裂对SiC基p-MOSFET反型层电荷的影响

The Influence of the Valley-orbit Splitting on Inversion-layer Charge of SiC Based p-MOSFET

6H-SiC反型层电子库仑散射

Study of coulomb scattering in 6H SiC inversion layers

从碳化硅材料的晶体结构出发分析了碳化硅材料中杂质的不完全离化，采用SiCMOS反型层薄层电荷数值模型，研究了杂质不完全离化对p型6H-SiCMOSC-V特性的影响。

The effect of incomplete ionization of impurity on C-V characteristics of p-type 6H - SiC MOS is researched based on Charge-Sheet model for SiC MOS inversion layers .

量子化极限情况下MOS反型层二维电子气定域态电子电导率σ（xx）的低频效应

The low frequency effects of transverse conductivity of electron in localized state of the two dimensional electron gas in MOS inversion layer under the condition of quantized limit

SiCMOS器件由于受SiO2／SiC界面处高浓度的界面陷进的影响使得反型层的电子迁移率很低，最终导致器件的跨导较低，4H-SiC材料更为明显。

SiC MOS devices suffer from low surface due to high densities of traps at the SiO2 / SiC interface because they cause poor inversion layer mobility , especially for 4H-SiC .

其次，给出了一种利用平带电容提取高k介质EOT的方法，该方法能克服量子效应所产生的反型层或积累层电容的影响。

Second , an approach using flat-band capacitance is demonstrated for extracting the EOT of a high k dielectric , without the effects of inversion or accumulation capacitance .

本文集中研究了激发态对杂质电离、n-MOSFET反型层电荷和MOS电容的影响。

In this dissertation , the effect of excited states on ionization of dopants , inversion-layer charge density of n-channel MOSFET and MOS capacitor is investigated .

自常温反常电磁特性发现以来，人们用反型层模型对常温反常Hall效应进行了成功的理论探讨，但至今这种模型还未得到实验的验证。

Since the discovery of specific anomalous electromagnetic character of n-Ge above room temperature , the inversion layer model has been very successful in theoretical investigation of anomalous Hall effect . However , up to now this model has not been verified experimentally .

这是由于沉积Fe3O4薄膜后，Si基片内部形成了由反型层和Si基片组成的类似p-n结结构，在激光照射下产生光生载流子。

Since the existence of this structure , a pseudo p-n junction structure consisting of the inversion layer and the Si substrate form within the Si substrate so as to the generation of photogenic charge carrier under the irradiation of laser .

因此在亚阈值区，根据QM模型，利用反型层质心这一概念，建立了与体硅MOSFET漏源电流相似的电流公式。

Therefore , in the subthreshold region , according to the QM model , the use of the concept of the inversion layer centroid , bulk silicon MOSFET drain-source current is similar to the current formula .

在杂质激发态的作用下，n-MOSFET的反型层电荷面密度降低，激发态主要影响亚阈值区。

Under the effect of excited states , the inversion-layer charge density of n-channel MOSFET is lowered , and the impact of excited states are important under the threshold voltage .

反型层中电位与载流子浓度的平衡分布

Equilibrium Distributions of the Potential and of the Carrier in the Inversion Layer

在工作状态下感应反型层太阳电池的薄层电阻

The inversion layer resistance in induced inversion layer solar cells under operating conditions

硅反型层中速度-电场关系的研究

On relation between carrier velocity and electric field in inversion layer of silicon

感应反型层太阳电池的开路电压分析

Analysis of Open-circuit Voltage of Induced-junction Solar Cells

而反型层进一步又为载流子的横向传输提供了条件，由于反型层内部载流子浓度梯度的关系，载流子产生了横向的移动，形成侧向光伏效应。

After that the inversion layer provides the condition of the lateral transfer for carrier .

用反型层模型探讨n&Ge中的常温反常霍耳效应

Investigation of the anomalous Hall effect in n-Ge at room temperature by the inversion layers model

自然反型层硅光电二极管

Silicon Photodiode Using Natural Inversion Layer

在模型基础上，研究了量子化效应对反型层载流子浓度和表面电势的影响。

Based on the model , the effects of quantum mechanical effects ( QMEs ) on the strong inversion layer charge density and the surface potential are studied .